高峰值电流MOS栅极触发晶闸管：固态闭合开关的快速接通技术

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"具有快速接通特性的高峰值电流MOS栅极触发晶闸管，适用于固态闭合开关应用" 这篇研究论文主要探讨了一种新型的MOS栅极触发晶闸管（MGTT），这种器件特别适用于固态闭合开关应用。在IEEEELECTRON DEVICE LETTERS的2016年2月刊第37卷第2期中，作者们提出并制造了一种采用先进商业绝缘栅双极晶体管（IGBT）工艺的MGTT结构。该结构创新地将MOS单元与交替的p-n-p-n晶闸管部分结合在一起，旨在解决传统晶闸管在高峰值电流和快速开启速度方面的挑战。传统的晶闸管在高电流和高速切换时可能会遇到性能瓶颈，而新的MGTT设计通过在相邻MOS单元之间引入p-n-p-n晶闸管段，解决了这个问题。这一设计增强了N漂移区的导电性调制，利用再生反馈机制实现了超低的导通电阻。因此，提出的MGTT能够承受高达5.2kA的峰值电流（Ipeak）以及高的电流上升率（di/dt）。此外，这种再生反馈机制与MOS门极触发操作相结合，显著提高了晶闸管的开启速度，并允许其在高重复频率下工作。这在固态闭合开关应用中是至关重要的，因为这些系统通常需要快速响应时间和高效率。实验结果证实了这种新型MGTT的优异性能，它不仅能够在大电流下稳定工作，而且具备快速响应的能力，适合于对开关速度有严格要求的场合。这项研究为固态开关技术带来了重大突破，提供了更高性能的解决方案，对于电力电子、电机控制、高压直流输电等领域具有重要应用价值。通过优化设计和工艺，未来可能进一步提升MGTT的电流处理能力和开关速度，从而推动相关技术的发展。

IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, FEBRUARY 2016 205

High Peak Current MOS Gate-Triggered Thyristor

With Fast Turn-On Characteristics for Solid-State

Closing Switch Applications

Wanjun Chen, Member, IEEE, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng,

Qi Zhou, Zhaoji Li, and Bo Zhang, Member, IEEE

Abstract—In this letter, a MOS gate-triggered thyris-

tor (MGTT) structure with alternating MOS and p-n-p-n thyris-

tor sections is proposed and fabricated with the state-of-the-art

commercial insulated gate bipolar transistor (IGBT) process. This

structure introduces a p-n-p-n thyristor between the adjacent

MOS cells, which brings about strong conductivity modulation

in N-drift region and, consequently, ultralow on-state resistance

due to the regenerative feedback mechanism. Thus, the proposed

MGTT exhibits high peak current (I

peak

) and high current rise

rate (di/dt). Furthermore, the regenerative feedback mechanism

in combination with MOS gate-triggered operation contributes

to fast turn-

ON speed and high repetition rate. The experimental

results show that the fabricated MGTT exhibits an I

peak

5.2 kA and a di/dt of 15.8 kA/µs, as well as high-frequency

repetition of up to 20 Hz. The excellent device performance,

coupled with a commercial IGBT-compatible fabrication process,

makes the proposed MGTT a promising candidate for pulse

power applications.

Index Terms— Pulse power, closing switch, peak current,

turn-on speed.

I. INTRODUCTION

ULSE power supplies have been widely applied under

single shot or repetitive burst conditions such as excimer

lasers, particle accelerators, electromagnetic launchers [1]–[5].

In such applications, the energy transfer should be as fast

and efﬁcient as possible, which requires the pulse switches

featuring properties of high voltage, high peak current (I

peak

high current rise rate (di/dt) and high repetition rate [4], [6].

Traditionally, thyratrons have been usually used for

such applications, which featuring drawbacks of short

lifetime [2], [7]–[9]. With the development of power

semiconductor technology, solid-state pulse switches have

been proposed as a replacement of thyratrons due to their

Manuscript received November 18, 2015; revised December 16, 2015;

accepted December 19, 2015. Date of publication December 22, 2015; date

of current version January 25, 2016. This work was supported in part by the

National Natural Science Foundation of China under Grant 61274090 and

Grant U1330114, and in part by the Fundamental Research Funds for the

Central Universities under Grant ZYGX2013J037. The review of this letter

was arranged by Editor K. J. Kuhn.

The authors are with the State Key Laboratory of Electronic Thin Films

and Integrated Devices, University of Electronic Science and Technology of

China, Chengdu 610054, China (e-mail: wjchen@uestc.edu.cn).

Color versions of one or more of the ﬁgures in this letter are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/LED.2015.2511182

superior properties of compactness, long lifetime, high

repetition rate and high efﬁciency [7], [10]–[12].

Among the mainstream power semiconductor devices,

traditional thyristor (SCR) and gate turn-off thyristor (GTO)

can handle several kilovolts and kiloamperes but have a

relative slow turn-on process, which limits di/dt capabil-

ity [13]–[16]. Super GTO (SGTO) device with highly inter-

digitated gate-emitter structure provides high di/dt and high

current-handling capability, but the current-controlled oper-

ation limits its popularization [16]–[18]. It is noteworthy

that the devices with voltage-controlled operation, such as

insulated gate bipolar transistors (IGBTs), enable smaller and

more efﬁcient gate drive systems as well as smaller passive

elements [2], [19], [20]. Although the investigations on IGBTs

applied in pulse power supplies have been demonstrated, those

application ﬁelds are limited because of their disadvantages

of low power density [19], [21]. The MOS assisted gate-

triggered thyristor (MAGT) with extremely high di/dt has

been proposed for pulse power applications. However, the

extra base electrode with negative bias complicates the fab-

rication process and application scheme, thus offsetting the

major advantage [3], [9].

In this wok, a MOS Gate-Triggered Thyristor (MGTT) has

been proposed for using as a closing switch in pulse power

applications. This device features alternating MOS and PNPN

thyristor sections, in which the MOS section provides a drive

current to trigger turn-on process and the PNPN thyristor

features regenerative feedback mechanism to support ultra

low on-state resistance. Thus, the proposed MGTT exhibits

high I

peak

and di/dt capabilities, which is especially suitable

for single shot and repetitive burst pulse power areas.

II. D

EVICE STRUCTURE AND EXPERIMENT RESULTS

Fig. 1 shows the structure of the proposed MGTT with

alternating MOS and PNPN thyristor sections. The MGTT is

distinguished from conventional IGBT in the sense that a large

area of PNPN thyristor exists between the adjacent MOS cells

and the thyristor section with cathode shorts is implemented

by punching the N

-cathode region. This makes it possible

to realize high blocking capability at gate-ground (V

= 0),

and simultaneously keep high NPN transistor current gain

for rapidly triggering. Driving MGTT device is similar to

driving power MOSFET or IGBT. Once the gate voltage is

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

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