硅光子集成微机电系统调制光栅耦合器

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本文档探讨了一种基于微电子机械系统(MEMS)的可调光栅耦合器，这在硅光子学领域具有重要意义。随着硅光子集成电路(SOI)技术的快速发展，由于其与互补金属氧化物半导体(CMOS)兼容的制造工艺，SOI平台越来越受到重视。硅光子器件的核心优势在于其高折射率差导致的光模式强烈束缚，这使得光波导在芯片上的信号传输效率得以显著提高。文章的焦点是介绍了一种新型的MEMS调制光栅耦合器设计。该耦合器结构被构建在悬臂梁上，配备了支撑臂，通过施加电压进行调控。作者展示了在12伏电压作用下，这种装置能够实现22.8纳米的波长范围调整，显示出显著的动态调谐性能。这对于光通信系统中的频谱管理和多通道传输具有实用价值。设计的关键点在于支撑臂的作用。它们被证明是关键组件，能够有效地防止因调节而产生的拉伸效应，从而确保了系统的稳定性和可靠性。这对优化光栅耦合器的性能和耐用性至关重要。此外，文章还讨论了索引术语，包括“硅光子学”、“光栅耦合器”以及“MEMS基础的可调光栅”，这些都是本文研究的核心关键词，表明了研究者们在硅基微光子器件中探索新型调谐机制的前沿工作。这篇研究论文提供了一个创新的设计思路，展示了如何利用MEMS技术在硅光子学平台上实现高效的光信号处理，这对于未来的光通信系统集成和高性能光电子设备的研发具有潜在的巨大影响。随着对微系统集成度的不断追求，这类可调光栅耦合器有望成为推动光通信技术发展的重要组成部分。

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 31, NO. 2, JANUARY 15, 2019 161

MEMS-Based Tunable Grating Coupler

Wen Yu, Shengqian Gao, Yusheng Lin , Mingbo He, Liu Liu ,

Jian Xu, Yannong Luo

, and Xinlun Cai

Abstract—We demonstrate a microelectromechanical-system-

based tunable grating coupler capable of changing the central

wavelength. The grating structure is fabricated on a suspended

cantilever with supporting arms and can be tuned by an applied

voltage. We demonstrate a tunable range of 22.8 nm under actu-

ation voltages of up to 12 V in the present devices. In addition,

we show that the supporting arms are critical components that

can be used to effectively avoid the pull-in effect.

Index Terms—Silicon photonics, grating coupler, MEMS-based

tunable grating.

I. INTRODUCTION

ILICON-ON-INSULATOR (SOI) is increasingly recog-

nized as one of the most attractive platforms for photonic

integrated cir-cuits owing to its complementary metal-oxide-

semiconductor-compatible fabrication technology [1]–[3]. The

waveguide mode in the silicon waveguide is strongly conﬁned

in the core owing to the high refractive index contrast, which

results in a large mismatch between the guided mode and a

single-mode ﬁber mode, making it very challenging to achieve

efﬁcient off-chip coupling. A grating coupler is a promising

solution to address this input/output (I/O) coupling problem,

which enables high-density I/O from a silicon chip and the

ability to perform wafer-scale testing [4]–[7].

In general, the grating coupler can be designed to obtain

the high coupling efﬁciency at the speciﬁc wavelength of

interest, or the central wavelength [8], [9]. However, in practice

the central wavelength of grating couplers normally shifts from

the designed value and varies randomly from device to device

and from wafer to wafer, due to manufacturing errors, ﬁber

misalignment during the assembly process, or uncertainties

Manuscript received September 9, 2018; revised November 23, 2018;

accepted December 12, 2018. Date of publication December 19, 2018;

date of current version January 16, 2019. This work was supported in

part by the National Natural Science Foundation of China (NSFC) under

Grant 11690031, Grant 61575224, and Grant 61622510, in part by the Key

Laboratory of Thalassemia Medicine, Chinese Academy of Medical Sciences,

under Grant 2017PT32012, and in part by the Guangxi Clinical Research

Center for Thalassemia Prevention and Treatment under Grant 2018-15-Y01.

(Corresponding authors: Jian Xu; Yannong Luo; Xinlun Cai.)

W. Yu, S. Gao, Y. Lin, M. He, and X. Cai are with the State Key

Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sun

University, Guangzhou 510275, China (e-mail: wenyuchn@outlook.com;

lshandongs@qq.com; linyoush@mail.sysu.edu.cn; hemingb@

mail2.sysu.edu.cn; caixlun5@mail.sysu.edu.cn).

L. Liu is with the Higher-Education Mega-Center, South China Acad-

emy of Advanced Optoelectronics, South China Normal University,

Guangzhou 510006, China (e-mail: liu.liu@coer-scnu.org).

J. Xu is with the School of Economics and Commerce, South China Univer-

sity of Technology, Guangzhou 510640, China (e-mail: jianxu@scut.edu.cn).

Y. Luo is with the Guangxi Key Laboratory of Thalassemia Research,

Guangxi Medical University, Nanning 530021, China (e-mail: luoyannong@

126.com).

Color versions of one or more of the ﬁgures in this letter are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/LPT.2018.2887254

of silicon-layer thickness in SOI wafers (typically varies a

few percent across the wafer and from wafer to wafer).

This central wavelength variation results in signiﬁcant and

variable optical losses, or bandwidth-narrowing for a photonic

integrated circuits with multiple I/O grating couplers.

A possible method to compensate for this undesirable

central wavelength shift is actively tuning the grating coupler.

The tunable grating couplers can be realized by simply chang-

ing the refractive index of the grating with thermal-optical

effect [10]–[12]. Unfortunately, this method suffers from draw-

backs of high steady-state power consumption and thermal

cross-talk. Another promising approach is electrostatic tuning

based on microelectromechanical system (MEMS) technol-

ogy [13]–[20]. Previously, a MEMS-based grating coupler has

been demonstrated by placing the grating coupler structure on

a movable suspended cantilever, and relative position between

the grating coupler and the optical ﬁber can be controlled by

applying voltages between the cantilever and substrate. The

MEMS-based tunable grating coupler beneﬁts from the low

power consumption of MEMS electrostatic actuation and a

very simple and mature fabrication process [13].

One drawback of electrostatically driven MEMS devices is

that they are typically limited by the pull-in effect. When the

applied voltage is larger than the pull-in voltage, the restoring

spring force can no longer keep up with the induced attractive

electrostatic force, and the cantilever collapses irreversibly

onto the substrate leading to device failure [21]–[23]. The pull-

in effect not only limits the reliable tuning range, but also

cause nonlinearity and mechanical instability of the device.

In this study, we designed and demonstrated a MEMS-based

tunable grating coupler with integrated supporting arms that

can be used to counteract the pull-in effect. The central

wavelength of the present device can be shifted up to 22.8 nm

with an applied voltage of 12 V, and no pull-in effect was

observed. For comparison, a tunable grating coupler without

supporting arms was fabricated on the same wafer and with

the same waveguide dimensions, which collapsed at an applied

voltage of less than 10 V.

II. T

UNING PRINCIPLE

Fig. 1(a) shows a schematic diagram of our silicon pho-

tonic MEMS-based grating coupler. The grating structure is

fabricated on a suspended cantilever that can be tuned by

parallel-plate actuation. When an actuation voltage is applied

between two parallel plates, the induced electrostatic attractive

force F

leads to deformation of the cantilever, which changes

the angle between the grating coupler and the ﬁber, as depicted

in Fig. 1(b). The central wavelength of the grating can be tuned

by this mechanism.

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

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