磁电调控的δ掺杂GaAs/AlxGa1-xAs异质结构中巨磁阻器件

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"研究论文 - Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs/AlxGa1-xAs heterostructure" 这篇研究论文探讨了在δ掺杂、磁电双重调控的GaAs/AlxGa1-xAs异质结构中的可控制巨磁阻（GMR）效应。巨磁阻效应是一种在磁性材料中广泛研究的现象，它表现为材料的电阻在磁场变化时显著变化。在该特定的纳米结构中，研究者发现了一个明显的GMR效应，其磁阻比可以通过δ掺杂进行调整。论文的主要亮点包括： 1. **理论研究GMR效应**：研究团队对δ掺杂的磁电半导体纳米结构中的GMR效应进行了深入的理论分析。这有助于理解材料的磁性质与电性质之间的相互作用，以及如何通过掺杂来改变这些性质。 2. **δ掺杂的影响**：通过δ掺杂，即在半导体中局部引入杂质，可以显著改变材料的电子结构，从而影响其磁阻特性。在GaAs/AlxGa1-xAs异质结构中，δ掺杂被证明能够调节GMR效应的强度，即改变磁阻比。 3. **结构可调的GMR器件**：基于这种结构，研究人员提出了一种可以调控的GMR器件。这样的器件对于磁性信息存储和处理具有潜在的应用价值，因为其磁阻性能可以根据需要进行调整。 4. **磁电双重调控**：结构中包含两道铁磁金属条纹，这使得器件不仅可以通过磁场来调控，还可以通过电场进行调控，增强了器件的多功能性和灵活性。 5. **关键词**：文章涉及的关键技术领域包括磁电双重调控半导体异质结构、δ掺杂、巨磁阻效应、磁阻比以及可控制的GMR器件。这些关键词反映了研究的核心内容和技术重点。这项工作为理解和利用半导体材料中的GMR效应提供了新的视角，并为设计高性能的磁性存储和逻辑器件开辟了新的可能性。通过δ掺杂和磁电双重调控，科研人员能够在微纳尺度上精确地控制材料的磁电特性，这对于未来的自旋电子学和磁性纳米技术的发展具有重要意义。

Controllable GMR device in a

-doped, magnetically and electrically

modulated,

−

aAs/Al Ga As

x1x

heterostructure

Li-Hua Shen, Gui-Lian Zhang

, Duan-Chui Yang

Department of Science, Shaoyang University, Huan 422004, People's Republic of China

HIGHLIGHTS



The giant magnetoresistance (GMR) effect is investigated theoretically in a

-doped magnetic-electric-barrier semiconductor nanostructure.



An obvious GMR effect is found in such a nanostructure and its magnetoresistance ratio is tunable by the

-doping.



A structurally tunable GMR device can be obtained for magnetic information storage.

article info

Article history:

Received 17 November 2015

Received in revised form

11 January 2016

Accepted 18 January 2016

Available online 25 January 2016

Keywords:

Magnetically and electrically modulated

semiconductor heterostructure

The

-doping

Giant magnetoresistance (GMR) effect

The magnetoresitance ratio (MRR)

Controllable GMR device

abstract

We report on a theoretical study of giant magnetoresistance (GMR) effect in a

-doped

−

aAs/Al Ga As

x1x

heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in

parallel conﬁguration. The

-doping dependent transmission and conductance of the device are calcu-

lated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is

also shown that the magnetoresistance ratio (MR) can be switched by the

-doping. The underlying

physical mechanism of the results is analysed in light of

-doping-dependent tunneling process in the

device.

1. Introduction

Fueled by its tremendous economic impact on magnetic in-

formation storage [1] such as ultrasensitive magnetic ﬁeld sensors,

read heads, and random access memories, the giant magnetore-

sistance (GMR) effect [2] has received numerous theoretical and

experimental attentions in recent years [3]. In general, GMR is

observed in a layer-shaped structure, where ferromagnetic layers

are separated by a thin non-magnetic layer. Moreover, such a

heterogeneous structure will yield a striking drop of the electric

resistance when an external magnetic ﬁeld switches the magne-

tizations of adjacent magnetic layers from an antiparallel (AP)

alignment to a parallel (P) one. Usually, it is widely agreed that the

spin-dependent scattering of electronic carriers gives rise to a

signiﬁcant difference of the conductances (G

and G

) in two

magnetization conﬁ gurations [4]. Therefore, the degree of the

GMR effect can be characterized by the so-called

magnetoresistance ratio (MRR), which is usually deﬁned as [5]

=( − )MRR G G G/

PAPAP

=( − )( +

)

MRR G G G G/

PAPPAP

. For the

viewpoint of the practical applications, one hopes a GMR device

possesses a high MRR under relatively low switching magnetic

ﬁelds. At low temperatures, high values of the MRR up to 220%

have been reported, but with appreciable magnetic ﬁelds [6].

To obtain a large MRR, an alternative method is to exploit the

magnetically conﬁned semiconductor heterostructure (MCSH) [7].

Experimentally, a MCSH can be fabricated by conﬁning the motion

of the high mobility two-dimensional electron gas (2DEG) em-

bedded often in a modulation-doped semiconductor hetero-

structure, with an inhomogenous magnetic ﬁeld on the nanometer

scale [8]. For instance, depositing the nanosized ferromagnetic

(FM) stripe on the surface of the

−

aAs/Al Ga As

x1x

heterostructure

can produce magnetic barrier (MB) MCSH [9], where the former

provides a magnetic ﬁeld inﬂuencing locally the electrons in the

latter. Several groups have explored extensively the GMR effect in

MCSHs and proposed successfully MCSH-based GMR devices for

magnetoelectronics applications; see partial Refs. [10–21].In

comparison with conventional metal-based GMR devices, this kind

of semiconductor-based GMR devices possesses a very high MRR

Contents lists available at ScienceDirect

journal homepage: www.elsevier.com/locate/physe

Physica E

http://dx.doi.org/10.1016/j.physe.2016.01.014

Corresponding author.

E-mail address: l_h_shen@126.com (G.-L. Zhang).

Physica E 83 (2016) 450–454

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磁电调控的δ掺杂GaAs/AlxGa1-xAs异质结构中巨磁阻器件

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