相对于 ASIC 设计(而不是站在普遍较高的单位成本),提供许多应用中的优势,为的部
分。 FPGA 包含可编程逻辑元件被称为“逻辑块”,和可重构的层次结构的互连允许块
的“有线”有点像许多(可变)的逻辑门,可以跨接线(许多)不同的配置一起。逻辑
块可以被配置为执行复杂的组合功能,或只是简单的逻辑门,如 AND 和 XOR。在大
多数的 FPGA,逻辑块还包括存储元件,其可以是简单的触发器或多个完整的内存块。
Digital circuits are electric circuits based on a number of discrete voltage levels. Digital
circuits are the most common physical representation of Boolean algebra and are the basis of
all digital computers. To most engineers,the terms "digital circuit", "digital system" and
"logic" are interchangeable in circuit", the context of digital circuits. In most cases the
number of different states of a node is two, represented by two voltage levels labeled
"Low"(0) and "High"(1). Often "Low" will be near and zero volts and "High" will be at a
higher level depending on the supply voltage in use. Computers, electronic clocks, and
programmable logic controllers (used to control industrial processes) are Processors
constructed of digital circuits. Digital Signal Processors are another another example.
数字电路的电路,基于离散的电压电平上的数量。数字电路是最常见的物理表示和布
尔代数和全数字化的计算机的基础。大多数工程师的,术语“数字电路”,“数字系统”
和“逻辑”是可以互换的电路中,数字电路的上下文中,在大多数情况下,一个节点的
不同的状态的数目是两个,表示由两个电压电平标记为“低”(0)和“高(1)”通常“低”
将是接近零伏和“高”将是在一个较高的水平取决于在使用上的电源电压。电脑,电子
钟表,和可编程逻辑控制器(用于控制工业过程)是用数字电路构成的处理器,数字
信号处理器是另一个例子。
Resistive random-access memory is a new non-volatile memory type being developed by
many companies . The basic idea is that a dielectric, which is normally insulating, can be
made to conduct through a filament or conduction path formed after application of a
sufficiently high voltage. The conduction path formation can arise from different
mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be
reset (broken, resulting in high resistance) or set (reformed, resulting in lower resistance) by
an appropriately applied voltage. Recent data suggest that many current paths, rather than a
single filament, are probably involved. There are several different types of RRAM. For
random access type memories, a transistor type architecture is preferred while the cross-
point architecture and the diode architecture open the path toward stacking memory layers
on top of each other and therefore are ideally suited for mass storage devices. The switching
mechanism itself can be classified in different dimensions. First there are effects where the
polarity between switching from the low to the high resistance level (reset operation) is
reversed compared to the switching between the high and the low resistance level (set
operation). These effects are called bipolar switching effects. On the contrary, there are also
unipolar switching effects where both set and reset operations require the same polarity, but