室温下MOCVD法制备n-ZnO/p-GaN异质结电致发光研究

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本文报道了一项关于在室温下实现n-ZnO/p-GaN异质结构发光二极管（LED）电注入发光性能的重要研究成果。由杨天鹏、朱惠超等人主导的研究团队采用金属有机化学气相沉积（MOCVD）技术，在(0001)蓝宝石基板上生长了这种独特的异质结结构。该异质结由掺杂镁的p型GaN层构成，其空穴浓度约为10^17 cm^-3，而n型ZnO层则是未掺杂的，但具有约10^18 cm^-3的电子浓度。研究的核心是构建n-ZnO/p-GaN的能级匹配，通过这种结构，当电流注入时，电子从n-ZnO层转移到p-GaN层，形成复合，释放出能量。在这个过程中，实验观察到了明显的蓝色至紫色的电致发光现象，其主导发射峰位于约415纳米波长，这是室温下的一种重要发现，因为通常情况下LED在低温工作条件下才能实现高效发光。这个结果表明，这种新型的异质结设计可能具有潜在的应用价值，如在无需制冷的显示器、照明设备或者传感等领域。文章还提到了研究团队来自吉林大学电子科学与工程学院的国家集成光学电子学重点实验室以及大连理工大学激光、离子、电子束材料改性国家重点实验室，研究者们的电子邮件地址也提供给了有兴趣的读者进一步交流和合作。这篇首发论文不仅展示了MOCVD技术在氮化物半导体生长中的高精度控制，也为室温下锌氧化物与其他半导体材料异质结的发光性能优化提供了新的思路。它对于推进低功耗、高效率的固态照明技术的发展具有重要意义，并可能推动下一代光电子器件的设计与制造。

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-1-

Realization of room temperature electroluminescence from

the heterojunction device with n-ZnO/p-GaN structure

Yang Tianpeng

，Zhu Huichao

，Bian Jiming

，Sun Jingchang

，Dong Xin

，

Zhang Baolin

，Liang Hongwei

，Li Xiangping

，Cui Yongguo

，Du Guotong

1, 2

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and

Engineering，Jilin University，Changchun （130012）

State Key Laboratory for Materials Modification by Laser，Ion，Electron Beams，School of

Physics and Optoelectronic Technology，Dalian University of Technology，Dalian （116024）

E-mail：jmbian@dlut.edu.cn

Abstract

The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0001) sapphire

substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction

structure was consisted of an Mg doped p-type GaN layer with a hole concentration of ~10

-3

and a

unintentionally doped n-type ZnO layer with an electron concentration of ~10

-3

. A distinct

blue-violet electroluminescence with a dominant emission peak centered at ~415nm was observed at

room temperature from the heterojunction structure under forward bias conditions. The origins of the

EL emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to

be attributed to a radiative recombination in both n-ZnO and p-GaN sides.

Keywords: ZnO thin films; Semiconductors; Metalorganic chemical vapor deposition;

Electroluminescence spectroscopy

1. Introduction

Short-wavelength light emitters have many applications, such as solid-state lighting, display

non-line-of-sight communications，information storage. Recently, ZnO has attracted great interest for

its wide band-gap (3.37 eV) and relatively large exciton binding energy (60 meV) at room temperature

(RT). It has been regarded as one of the most promising candidates for the next generation of

short-wavelength light emitting diodes (LEDs) and lasing devices (LDs) operating at high temperatures

and in harsh environments [1-3]. The ZnO based LEDs will be brighter than the current state-of-art

nitride light emitters, and at the same time, the production cost will be reduced significantly compared

with current technology. ZnO has some fundamental advantages over its major rival (GaN) as a

room-temperature emitter, including a more stable exciton, the availability of large-area substrates, the

amenability to wet chemical etching, and relatively low materials costs. For the application of ZnO

based optoelectronic devices, it is necessary to fabricate both n-type and p-type ZnO films. However,

the realization of stable and reproducible p-type ZnO with acceptable electrical and optical properties

for optoelectronic devices has long been the bottleneck for ZnO-base materials applications [2-3].

Though certain progress has been made in fabricating p-type ZnO and even ZnO based p-n

homojunction light emitting devices, this challenge still represents a major problem since the

light-emitting efficiency was generally very limited due to the poor quality of the p-type ZnO layer

[4-6]. Moreover, the choice of p-type doping materials and growth technique remains controversial [6].

Presently, the properties of ZnO might be best exploited by constructing heterojunction with ZnO

active regions, in this way, the emission properties of an LED can still be determined by the

advantageous properties of ZnO. So far, many efforts have been devoted to developing ZnO-based p-n

heterojunction LEDs with ZnO as the n-type layer, combined with other p-type layers such as SrCu

This work was supported by the National Nature Science Foundation of China under the Grant No.50532080

(No.60576054), Nature Science Foundation of LiaoNing Province under the Grant No.20072178, Doctoral Project

by China Ministry of Education under the Grant No.20070141017, 2005 Excellence Youth Teacher Cultivation

Fund of Dalian University of Technology, and Jilin University Innovation Foundation.

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