NIS5420 Series
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Table 1. FUNCTIONAL PIN DESCRIPTION
Pin Function Description
1 Ground Negative input voltage to the device. This is used as the internal reference for the IC.
2 dv/dt The internal dv/dt circuit controls the slew rate of the output voltage at turn on. It has an internal
capacitor that allows it to ramp up over a period of 2 ms. An external capacitor can be added to this
pin to increase the ramp time. If an additional time delay is not required, this pin should be left open.
3 Enable/Fault The enable/fault pin is a tri−state, bidirectional interface. It can be pulled to ground with external
open−drain or open collector device to shutdown the eFuse. It can also be used as a status indicator;
if the voltage level is intermediate around 1.4 V − the eFuse is in the thermal shutdown, if the voltage
level is high around 3 V − the eFuse is operating normally. Do not actively drive this pin to any
voltage. Do not connect a capacitor to this pin.
4 I
Limit
A resistor between this pin and the source pin sets the overload and short circuit current limit levels.
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NC For NIS5420MT3, NIS5420MT4 and NIS5420MT5
I
SENSE
For NIS5420MT1, NIS5420MT2, NIS5420MT6, NIS5420MT7 and NIS5420MT8 load current monitor
allows the system to monitor the load current in real time. Connect R
SENSE
to GND.
6−10 Source This pin is the source of the internal power FET and the output terminal of the fuse.
11 (belly pad) V
CC
Positive input voltage to the device.
MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage, operating, steady−state (V
CC
to GND, Note 1)
Transient (100 ms)
V
IN
−0.6 to 18
−0.6 to 25
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Negative voltage will not damage device provided that the power dissipation is limited to the rated allowable power for the package.
Table 2. THERMAL RATINGS
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Air
(4 layer High−K JEDEC JESD51−7 PCB, 100 mm
2
, 2 oz. Cu)
q
JA
90 °C/W
Thermal Characterization Parameter, Junction−to−Lead
(4 layer High−K JEDEC JESD51−7 PCB, 100 mm
2
, 2 oz. Cu)
Y
J−L
27.5 °C/W
Thermal Characterization Parameter, Junction−to−Board
(4 layer High−K JEDEC JESD51−7 PCB, 100 mm
2
, 2 oz. Cu)
Y
J−B
27.5 °C/W
Thermal Characterization Parameter, Junction−to−Case Top
(4 layer High−K JEDEC JESD51−7 PCB, 100 mm
2
, 2 oz. Cu)
Y
J−T
7.6 °C/W
Total Power Dissipation @ T
A
= 25°C
(4 layer High−K JEDEC JESD51−7 PCB, 100 mm
2
, 2 oz. Cu)
Derate above 25°C
P
max
1.39
11.1
W
mW/°C
Operating Ambient Temperature Range T
A
−40 to 125 °C
Operating Junction Temperature Range T
J
−40 to 150 °C
Non−operating Temperature Range T
STG
−55 to 155 °C
Lead Temperature, Soldering (10 Sec) T
L
260 °C