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Samsung Confidential
KMBDE0000A-S998000 (2GB moviNAND_8Gb MLC Based) Advance
Table 2. Bus Operating Conditons
Parameter Symbol Min Max Unit Remark
Peak voltage on all lines -0.5 3.6 V
Input Leakage Current -10 10 μA
Output Leakage Current -10 10 μA
Table 3. Power Supply Voltage
Parameter Symbol Min Max Unit Remark
Supply voltage
V
DD
1.70(or 2.5) 1.95(or 3.6) V
V
DDF
2.5 3.6 V
V
SS
-0.5 0.5 V
The current consumption of the moviNAND for the different moviNAND configurations is defined in the power class fields in the
EXT_CSD register.
Table 4. Host and Bus Capacities
Parameter Symbol Min Max Unit Remark
Pull-up resistance for CMD R
CMD
4.7 100 KOhm to prevent bus floating
Pull-up resistance for DAT0-7 R
DAT
50 100 KOhm to prevent bus floating
Internal pull up resistance DAT1-DAT7 R
int
50 150 KOhm to prevent unconnected
lines floating
Bus signal line capacitance C
L
30 pF Single moviNAND
Single moviNAND capacitance C
movi
7pF
Maximum signal line inductance 16 nH f
PP
<= 52 MHz
The total capacitance C
L
of each line of the moviNAND bus is the sum of the bus master capacitance C
HOST
, the bus capacitance
C
BUS
itself and the capacitance C
movi
of the moviNAND connected to this line:
C
L
= C
HOST
+ C
BUS
+ C
movi
Requiring the sum of the host and bus capacitances not to exceed 20 pF:
3.2 Bus Signal Line Load
3.1 Bus Operating Conditions
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