Micron MT4C16270 DDR3中文数据手册：高性能16GB内存详解

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DDR3中文数据手册Micron - MT4C16270 是由Micron Technology, Inc. 发布的一份详细的技术文档，它针对的是256Kx16位的动态随机存取存储器（DRAM）。这款内存芯片采用高性能的CMOS硅门工艺，具有标准的x16引脚布局、时序规范和功能，适用于工业标准应用。 MT4C16270的特点包括： 1. **接口兼容性**：兼容行业标准的16针接口，支持TTL兼容的设备连接，使得其在各种系统中易于集成。 2. **电源需求**：单电源供电，工作电压范围为+5V±10%，在待机模式下功耗低至3mW，典型活动状态下为300mW，体现了良好的能效。 3. **刷新模式**：提供多种刷新模式，如RAS#-ONLY、CAS#-BEFORE-RAS# (CBR)以及HIDDEN，允许灵活的数据管理和优化。 4. **访问速度**：支持三种不同访问时间规格，即40ns、50ns和60ns，这取决于实际应用对速度的需求。 5. **封装形式**：MT4C16270采用塑料小外形引脚（SOJ）封装，例如MT4C16270DJ-4，尺寸为400 mil，适合于紧凑型设计。 6. **页模式**：支持Extended Data-Out (EDO) PAGEMODE，提供了额外的数据访问能力。 7. **写入与读取操作**：支持BYTEWRITE和BYTEREAD访问周期，便于数据的读取和修改。 8. **引脚分配**：手册中提供了详细的40引脚SOJ的引脚分配图，有助于硬件设计者正确配置电路。值得注意的是，40ns和50ns的访问速度规格在+5%的电压变化范围内。如果需要更宽的电压范围，应直接联系制造商查询可用性。 Micron MT4C16270 DDR3数据手册是硬件工程师和系统设计师在设计基于DDR3技术的系统时的重要参考资料，提供了关于芯片性能、接口和操作细节的详尽信息。在项目实施时，确保根据具体应用选择合适的时序参数，并考虑到电源管理、刷新策略和封装选择等因素。

MT4C16270 Micron Technology, Inc., reserves the right to change products or specifications without notice.

W06.pm5 – Rev. 10/96 1996, Micron Technology, Inc.

MT4C16270

256K x 16 DRAM

TECHNOLOGY, INC.



V

IH

V

IH

RAS#

V

IH

ADDR



ROW





COLUMN (A)







DON’T CARE

UNDEFINED



V

IH

WE#

V

IOH

IOL

OPEN







WPZ

The DQs go to High-Z if WE# falls, and if

WPZ is met, 

will remain High-Z until CAS# goes LOW with 

WE# HIGH (i.e., until a READ cycle is initiated).

V

IH

OE#



VALID DATA (B)

WHZ

WE# may be used to disable the DQs to prepare

for input data in an EARLY WRITE cycle. The DQs

will remain High-Z until CAS# goes LOW with 

WE# HIGH (i.e., until a READ cycle is initiated).



WHZ

COLUMN (D)





VALID DATA (A)

COLUMN (B)

COLUMN (C)

INPUT DATA (C)

CASL#/CASH#

Figure 4

OUTPUT ENABLE AND DISABLE WITH WE#

transitions HIGH. Then OE# can pulse HIGH for a mini-

mum of

OEP anytime during the CAS# HIGH period and

the DQs will tristate and remain tristate, regardless of OE#,

until CAS# falls again (please reference Figure 3 for further

detail on the toggling OE# condition). During other cycles,

the outputs are disabled at

OFF time after RAS# and CAS#

are HIGH, or

WHZ after WE# transitions LOW. The

OFF

time is referenced from the rising edge of RAS# or CAS#,

whichever occurs last. WE# can also perform the function

of turning off the output drivers under certain conditions,

as shown in Figure 4.

Returning RAS# and CAS# HIGH terminates a memory

cycle and decreases chip current to a reduced standby level.

The chip is also preconditioned for the next cycle during the

RAS# HIGH time. Memory cell data is retained in its correct

state by maintaining power and executing any RAS# cycle

(READ, WRITE) or RAS# refresh cycle (RAS#-ONLY, CBR,

or HIDDEN) so that all 512 combinations of RAS# ad-

dresses (A0-A8) are executed at least every 8ms, regardless

of sequence. The CBR REFRESH cycle will also invoke the

refresh counter and controller for row address control.

EDO PAGE MODE

DRAM READ cycles have traditionally turned the out-

put buffers off (High-Z) with the rising edge of CAS#. If

CAS# goes HIGH, and OE# is LOW (active), the output

buffers will be disabled. The MT4C16270 offers an acceler-

ated PAGE MODE cycle by eliminating output disable from

CAS# HIGH. This option is called EDO and it allows CAS#

precharge time (

CP) to occur without the output data going

invalid (see READ and EDO-PAGE-MODE READ wave-

forms).

EDO operates as any DRAM READ or FAST-PAGE-

MODE READ, except data will be held valid after CAS#

goes HIGH, as long as RAS# and OE# are held LOW and

WE# is held HIGH. OE# can be brought LOW or HIGH

while CAS# and RAS# are LOW, and the DQs will transi-

tion between valid data and High-Z. Using OE#, there are

two methods to disable the outputs and keep them disabled

during the CAS# HIGH time. The first method is to have

OE# HIGH when CAS# transitions HIGH and keep OE#

HIGH for

OEHC. This will tristate the DQs and they will

remain tristate, regardless of OE#, until CAS# falls again.

The second method is to have OE# LOW when CAS#

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