硅纳米晶体：开启硅光子学新时代

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"Silicon nanocrystals to enable silicon photonics Invited Paper" 本文是一篇关于硅纳米晶在硅光子学应用中的特邀论文，由Min Xie、Zhizhong Yuan、Bo Qian和Lorenzo Pavesi等人撰写。文章讨论了低维硅材料，特别是量子尺寸效应显著的硅纳米晶在光电子学和硅光子学领域的潜力和应用。一、引言硅光子学是一种利用微电子工艺制造光子设备的技术，借鉴电子学的集成理念，通过集成大量设备实现高复杂度电路，以达到高性能和低成本。这种技术的目标是发展光子集成电路，与传统的硅电子学相辅相成，推动信息处理速度的提升。二、硅纳米晶的制备与性质硅纳米晶的生产方法是文章关注的重点之一。这些纳米级别的硅结构可以通过多种途径制造，如热解、化学气相沉积或溶胶-凝胶过程。硅纳米晶的独特之处在于其量子尺寸效应，使得它们的光学和电学特性与体硅截然不同。例如，由于量子限制，它们可以展现出不同的能带结构，导致在特定波长下具有吸收、发射和非线性光学特性。三、硅纳米晶的光电子性能硅纳米晶的光电子性质是其在硅光子学中发挥作用的关键。由于量子尺寸效应，它们可以在可见光范围内展现出发光特性，这在硅这种间接带隙半导体中是罕见的。此外，它们还具有高的非线性光学响应，这使得硅纳米晶成为构建光开关、调制器等光子器件的理想材料。四、硅光子学应用文章列举了几种基于硅纳米晶的光子器件应用实例，如发光二极管（LED）、光探测器和光存储设备。这些器件展示了硅纳米晶在光通信、数据处理和能源领域的潜力。特别是在硅基光子集成中，硅纳米晶可以用于构建高效、小型化的光源，弥补硅本身不发光的局限。五、结论作者强调，低维硅材料，尤其是硅纳米晶，是硅光子学领域的一颗璀璨明星。它们不仅提供了新的功能可能性，而且由于与现有微电子工艺的兼容性，使得大规模集成成为可能，从而降低了器件成本，提高了性能。关键词：硅光子学、硅纳米晶、发光器件、非线性光、光伏参考代码：160.4236, 190.4400, 200.4650, 250.3140 DOI: 10.3788/COL20090704.0319 这篇论文深入探讨了硅纳米晶在硅光子学中的作用，揭示了其独特的物理性质和潜在应用，对进一步研究和发展硅基光子技术具有重要意义。

April 10, 2009 / Vol. 7, No. 4 / CHINESE OPTICS LETTERS 319

Silicon nanocrystals to enable silicon photonics

Invited Paper

Min Xie

∗

, Zhizhong Yuan, Bo Qian, and Lorenzo Pavesi

Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, I-38100 Povo (Trento), Italy

∗

E-mail: nllab@science.unitn.it

Received January 7, 2009

Low dimensional silicon, where quantum size eﬀects play signiﬁcant roles, enables silicon with new photonic

functionalities. In this short review, we discuss the way that silicon nanocrystals are prod uced, their

optoelectronic properties and a few device applications. We demonstrate that low dimensional silicon is

an optimum material for developing silicon photonics.

OCIS codes: 160.4236, 190.4400, 200.4650, 250.3140.

doi: 10.3788/COL20090704.0319.

1. Introduction

Silicon photonics is the technology where photonic de-

vices are pr oduced by standard microe le c tronics pro-

cesses by using the same paradigm of electronics: in-

tegration of a large number of devices to yield a high

circuit complexity which allows high per fo rmances and

low costs

[1]

. Thus, the real truth is to develop photonic

devices that can be easily integrated to improve the

single device performance and to allow high volume pro-

duction: integration and mass-manufacturing ar e where

silicon photonic can outperform other photonic plat-

forms, such as InP-based or glass-based ones. To this

aim, one further add-on is making silicon do something

where it is not able to do in its standard (bulk) form.

Low dimensional s ilicon, where small silicon nanocrys-

tals or na noclusters (Si-ncs ) are developed, is one way to

compel silicon to act as an active optical material

[2]

. In

this short review, we will go through a few applications

where Si- nc enables silicon doing photonic functions oth-

erwise not possible by using bulk silicon.

Figure 1 reports the number of results one gets if looks

for Si-nc in Google

Scholar. It is obse rved a steady

rise in the numb e r of publications witnessing the ris-

ing interest in this material. The ﬁrst results found in

this search refer to four papers reporting about diﬀer-

ent properties of Si-nc: the ﬁrst is our paper on the

observation of optical gain

[3]

, the second is the pa per

by Tiwari et al. on the use of Si-nc for memor ie s

[4]

, the

third is the paper by Wilson et al. on the demonstration

of quantum size eﬀects in Si-nc

[5]

, and the fourth is the

paper by Mutti et al. on the observation o f room tem-

perature luminescence in Si-nc

[6]

. While if one makes the

same search on Google

, the ﬁrst result concerns the

use of Si-nc for photovoltaics

[7]

. All the key ingredients

that make Si-nc appealing for photo nics are discussed in

these papers: quantum s iz e eﬀects make new phenom-

ena appear in silicon, such as r oom temperature visible

photoluminescence, optical gain, Coulomb blockade, and

multiexciton generation. In this short review, we will

discuss these topics and see how they can be exploited in

working devices. For more detailed information, we refer

readers to o ther reviews tha t we wrote in the past

[8−11]

2. Silicon nanocrystals: production

Silicon nanocrystals are produced by a wealth of dif-

ferent techniques

[12]

. They can be essentially distin-

guished into three types: direct synthesis, phase separ a-

tion in a silicon-rich dielectric, and top-down production

from bulk silicon. Examples of the ﬁrst type are cluster

deposition

[13]

or chemical synthesis in a solution

[14]

. The

second class of techniques is mor e widely diﬀused and

essentially is bas e d on the production of a silicon-rich

dielectric (e.g., silicon oxide or silicon nitride) and on the

phase separation of the constituent phases (silicon and

the dielectric) by an annealing treatment. The duration

and temp e rature of the annealing treatment determine

the size and crystallinity of the nanoparticles. Various

methods can be use d to produce the starting silicon-rich

dielectric: ion implantation

[6]

, sputtering

[15]

, chemical

vapor deposition (CVD)

[16]

, so l-gel synthesis

[17]

, etc.

The third clas s of techniques is the one us ed in the pro-

duction of porous silicon (electrochemical etching) where

silicon is partially dissolved and the remaining skeleton

is composed of interconnected Si-ncs

[18]

. Alternatively,

lithographic technique followed by rep e ated oxidations on

a silicon wafer can deﬁne small silico n islands or columns

where Si-ncs are formed

[19]

. This is useful for single Si-

nc production, or when the geo metr ical arrangement of

Si-nc has to b e controlled.

The preparation method strongly inﬂuences electrical

Fig. 1. Number of articles versus year as reported by

Google

Scholar in a search performed on 31/12/2008.

The search keys were “low dimensional silicon” OR “silicon

nanocrystal/s” OR “silicon nanocluster/s”. The total num-

ber of articles integrated over the years is 6220, while the

results for “silicon photonics” is 1740 and for “porous sili-

con” is 28800. The single point referred to year 2008 is low

due to the time delay between the search date and the actual

database construction.

1671-7694/2009/040319-06

 2009 Chinese Optics Letters

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