TPD4S214
ZHCSAT5F –JANUARY 2013–REVISED JANUARY 2015
www.ti.com.cn
7.7 Electrical characteristics for UVLO / OVLO
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT UNDER-VOLTAGE LOCKOUT
Under-voltage lock-out, input power detected V
OTG_IN
increasing from 0 V to 5 V, No load on V
BUS
V
UVLO+
3.4 3.6 3.8 V
threshold rising pin
Under-voltage lock-out, input power detected V
OTG_IN
decreasing from 5 V to 0 V, No load on V
BUS
V
UVLO–
3.0 3.2 3.5 V
threshold falling pin
V
HYS-UVLO
Hysteresis on UVLO Δ of V
UVLO+
and V
UVLO–
260 mV
V
OTG_IN
increasing from 0V to 5V, No load on V
BUS
pin;
T
RUVLO
Recovery time from UVLO 18 ms
time from V
OTG_IN
= V
UVLO+
to FLT toggles high
V
OTG_IN
decreasing from 5V to 0V, No load on V
BUS
pin;
T
RESP_UVLO
Response time for UVLO 0.18 µs
time from V
OTG_IN
= V
UVLO–
to FLT toggles low
OUTPUT OVERVOLTAGE LOCKOUT
V
OVP+
OVLO rising threshold Both V
OTG_IN
and V
BUS
increasing from 5 V to 7 V 5.55 6.15 6.45 V
V
OVP–
OVLO falling threshold Both V
OTG_IN
and V
BUS
decreasing from 7 V to 5 V 5.4 6 6.3 V
V
HYS-OVP
Hysteresis on OVLO Δ of V
UVLO+
and V
UVLO–
100 mV
Both V
OTG_IN
and V
BUS
decreasing from 7 V to 5 V,
V
OTG_IN
= 5 V;
T
ROVLO
Recovery time from OVLO 9 ms
time from V
BUS
= V
OVP–
to FLT toggles high
Both V
OTG_IN
and V
BUS
increasing from 5 V to 7 V,
V
OTG_IN
= 5 V;
T
RESP_OVLO
Response time for OVLO 17 µs
time from V
BUS
= V
OVP+
to FLT toggles low
7.8 Electrical Characteristics for DET Circuits
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
BUS_VALID–
Valid V
BUS
voltage detect V
BUS
= 7 V to 0 V 2.7 2.9 3 V
V
BUS_VALID+
Valid V
BUS
voltage detect V
BUS
= 0 V to 7 V 5.3 5.4 5.6 V
V
BUS
0 V to 4 V, 200 ns ramp; V
BUS
= V
BUS_VALID– MIN
to DET toggles
T
DET_DELAY–
V
BUS
detect propagation delay– 4.9 µs
high
V
BUS
6 V to 4 V, 200 ns ramp; V
BUS
= V
BUS_VALID+ MAX
to DET toggles
T
DET_DELAY+
V
BUS
detect propagation delay+ 1.8 µs
low
7.9 Electrical Characteristics for OTG Switch
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
R
DS_ON
OTG switch resistance TA = 25 °C, V
BUS
= 5 V, IOUT = 100 mA, R
ADJ
= 75 kΩ
(1)
263 290 mΩ
V
DROP
OTG switch voltage drop V
BUS
= 5 V, IOUT = 100 mA, R
ADJ
= 75 kΩ 12.6 29 mV
V
BUS
= 30 V, EN = 5 V, V
OTG_IN
= 5 V 6 µA
I
OTG_OFF_30V
Leakage current at 30V
V
BUS
= 30 V, EN = 5 V, V
OTG_IN
= 0 V 11 nA
I
OTG_OFF_2V
Leakage current at–2V V
BUS
= -2 V, EN = 5 V, V
OTG_IN
= 5 V 30 µA
Measured at V
OTG_IN
V
BUS
= 0 V, EN = 0 V, V
OTG_IN
= 5 V 32 µA
I
OTG_OFF
Standby Leakage current
V
BUS
= 5 V, EN = 0 V, V
OTG_IN
= 0 V 10 nA
V
BUS
= 5 V, EN = 5 V, V
OTG_IN
= 0V 1 nA
I
BUS_REV
Reverse Leakage current
V
BUS
= 5.5 V, EN = 5 V, V
OTG_IN
= 5 V 6 µA
T
ON
Turn-ON time R
L
= 100 Ω, C
L
= 1 µF, R
ADJ
= 75 kΩ 16 ms
T
OFF_EN
Turn-OFF time R
L
= 100 Ω, C
L
= 1 µF, R
ADJ
= 75 kΩ, toggle EN 80 µs
T
OFF_OTG
Turn-OFF time R
L
= 100 Ω, C
L
= 1 µF, R
ADJ
= 75 kΩ, toggle V
OTG_IN
0.5 µs
T
RISE
Output rise time R
L
= 100 Ω, C
L
= 1 µF, R
ADJ
= 75 kΩ 137 µs
T
FALL
Output fall time R
L
= 100 Ω, C
L
= 1 µF, R
ADJ
= 75 kΩ 1.6 µs
(1) R
DS(ON)
is measured at 25°C
6 Copyright © 2013–2015, Texas Instruments Incorporated
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