TMC5160：高效驱控一体化步进电机控制器

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"TMC5160是一款高功率步进电机控制器和驱动IC，结合了控制器和预驱动器功能，可外接功率管。这款芯片适用于2相步进电机，最大可支持20A的线圈电流（需外部MOSFET）。其特色在于安静运行、防止振动和丢步、防止过冲，并且能根据速度动态调整力矩，通过电流控制适应不同负载，从而实现高达75%的节能效果。TMC5160具备多种接口，如Step/Dir、SPI和Single Wire UART，还集成有编码器接口和两个参考开关输入。最高分辨率可达每全步256细分。主要特性包括stealthChop2技术以实现静音运行和流畅运动，Resonance Dampening用于抑制中频共振，spreadCycle技术提供高度动态的电机控制，dcStep实现负载依赖的速控，stallGuard2提供高精度无传感器的电机负载检测，coolStep电流控制实现节能，passiveBraking和freewheeling模式支持制动和自由滑行，以及全面的保护和诊断功能。该芯片适用于工业驱动、机器人、纺织机械、自动化等多个领域。" TMC5160是Trinamic Motion Control GmbH & Co. KG公司设计的一款高性能步进电机驱动和控制器，专为需要高效、低噪音和精确控制的应用而设计。其核心特性包括： 1. **2相步进电机驱动**：TMC5160支持2相步进电机，最大20A的线圈电流，但需要外接MOSFET来处理大电流。 2. **6点™斜坡运动控制器**：内置的6点斜坡算法优化了电机加速和减速过程，减少振动和噪音。 3. **Step/Dir接口和microPlyer™**：Step/Dir接口结合微步插补技术，实现精细的步进控制。 4. **电压范围8…60VDC**：适应广泛的电源电压，提高了系统的灵活性。 5. **SPI和Single Wire UART接口**：提供灵活的通信选项，便于与其他系统集成。 6. **编码器接口和2个参考开关输入**：支持位置反馈，提高定位精度。 7. **stealthChop2**：采用静音斩波技术，显著降低电机运行时的噪音。 8. **Resonance Dampening**：针对中频共振进行抑制，确保平稳运动。 9. **spreadCycle™**：这是一种高度动态的电机控制技术，可以快速响应电机状态变化。 10. **dcStep™**：负载依赖的速控，根据负载情况自动调整电机速度，确保稳定运行。 11. **stallGuard2™**：通过无传感器技术精确检测电机负载，防止电机卡死。 12. **coolStep™**：电流控制策略，可节省高达75%的能源，提高系统效率。 13. **PassiveBraking和freewheeling mode**：在不需要电机转动时，提供制动和自由滑行模式，增强安全性。 14. **全面保护与诊断**：具有多种保护机制，如过流、过压等，确保系统稳定可靠。这款芯片广泛应用于工业驱动、机器人、纺织机械、自动化实验室设备、液体处理、医疗设备、办公室自动化、闭路电视、ATM机、现金循环器、泵和阀门等领域，体现了其在高精度、低噪音和高效能控制方面的优势。

TMC5160 DATASHEET (Rev. 1.01 / 2017-NOV-29) 16

www.trinamic.com

Attention

In case VSA is supplied by a different voltage source, make sure that VSA does not drop out during

motor operation.

3.2 External Gate Voltage Regulator

At high supply voltages like 48V, the internal gate voltage regulator and the internal 5V regulator

have considerable power dissipation, especially with high MOSFET gate charges, high chopper

frequency or high system clock frequency >12MHz. A good thermal coupling of the heat slug to the

system PCB GND plane is required to dissipate heat. Still, the thermal thresholds will be lowered

significantly by self-heating. To reduce power dissipation, supply an external gate driver voltage to the

TMC5160. Figure 3.2 shows the required connection. The internal gate voltage regulator becomes

disabled in this constellation. 12V +/-1V are recommended for best results.

5V Voltage

regulator

5VOUT

VSA

2.2µ

VCC

2.2µ

12V Gate Voltage

2R2

470n

11.5V Voltage

regulator

12VOUT

Figure 3.2 External gate voltage supply

Hint

With MOSFETs above 50nC of total gate charge, chopper frequency >40kHz, or at clock frequency

>12MHz, it is recommended to use a VSA supply not higher than 40V.

TMC5160 DATASHEET (Rev. 1.01 / 2017-NOV-29) 17

www.trinamic.com

3.3 MOSFETs and Slope Control

The selection of power MOSFETs depends on a number of factors, like package size, on-resistance,

voltage rating and supplier. It is not true, that larger, lower RDSon MOSFETs will always be better, as

a larger device also has higher capacitances and may add more ringing in trace inductance and power

dissipation in the gate drive circuitry. Adapt the MOSFETs to the required motor voltage (adding 5-10V

of reserve to the peak supply voltage) and to the desired maximum current, in a way that resistive

power dissipation still is low for the chosen MOSFET package. The TMC5160 drives the MOSFET gates

with roughly 10V, so normal, 10V specified types are sufficient. Logic level FETs (4.5V specified RDSon)

will also work, but may be more critical with regard to bridge cross-conduction due to lower V

GS(th)

The gate drive current and MOSFET gate resistors R

(optional) should basically be adapted to the

MOSFET gate-drain charge (Miller charge). Figure 3.3 shows the influence of the Miller charge on the

switching event. Figure 3.4 additionally shows the switching events in different load situations (load

pulling the output up or down), and the required bridge brake-before-make time.

The following table shall serve as a thumb rule for programming the MOSFET driver current

(DRVSTRENGTH setting) and the selection of gate resistors:

MOSFET MILLER CHARGE VS. DRVSTRENGTH AND R

Miller Charge

[nC] (typ.)

DRVSTRENGTH

setting

Value of R

[Ω]

<10

≤ 15

10…20

0 or 1

≤ 10

20…40

1 or 2

≤ 7.5

40…60

2 or 3

≤ 5

>60

≤ 2.7

The TMC5160 provides increased gate-off drive current to avoid bridge cross-conduction induced by

high dV/dt. This protection will be less efficient with gate resistors exceeding the values given in the

table. Therefore, for larger values of R

, a parallel diode may be required to ensure keeping the

MOSFET safely off during switching events.

MOSFET gate charge vs. switching event

– Total gate charge (nC)

– Gate to source voltage (V)

0 5 10 15 20 25

– Drain to source voltage (V)

MILLER

Figure 3.3 Miller charge determines switching slope

Hints

- Choose modern MOSFETs with fast and soft recovery bulk diode and low reverse recovery charge.

- A small, SMD MOSFET package allows compacter routing and reduces parasitic inductance effects.

TMC5160 DATASHEET (Rev. 1.01 / 2017-NOV-29) 18

www.trinamic.com

MOSFET drivers

BMx

12VOUT

Load pulling BMx down Load pulling BMx up

BBM

Miller plateau

Hx-

BMx

-V

BMx

Miller plateau

Effective break-before-make time

-1.2V

Output

slope

Output

slope

BBM

Figure 3.4 Slopes, Miller plateau and blank time

The following DRV_CONF parameters allow adapting the driver to the MOSFET bridge:

Parameter

Description

Setting

Comment

BBMTIME

Break-before-make time setting to ensure non-

overlapping switching of high-side and low-side

MOSFETs. BBMTIME allows fine tuning of times in

increments shorter than a clock period.

For higher times, use BBMCLKS.

0…24

time[ns]

100ns*32/(32-BBMTIME)

Ensure ~30% headroom

Reset Default: 0

BBMCLKS

Like BBMTIME, but in multiple of a clock cycle.

The longer setting rules (BBMTIME vs. BBMCLKS).

0…15

0: off

Reset Default: OTP 4 or 2

DRV_

STRENGTH

Selection of gate driver current. Adapts the gate

driver current to the gate charge of the external

MOSFETs.

0…3

Reset Default = 2

FILT_ISENSE

Filter time constant of sense amplifier to suppress

ringing and coupling from second coil operation

Hint: Increase setting if motor chopper noise

occurs due to cross-coupling of both coils.

(Reset Default = %00)

0…3

00: ~100ns (reset default)

01: ~200ns

10: ~300ns

11: ~400ns

DRV_CONF Parameters

Use the lowest gate driver strength setting DRVSTRENGTH giving favorable switching slopes, before

increasing the value of the gate series resistors. A slope time of nominal 40ns to 80ns is absolutely

sufficient and will normally be covered by the shortest possible Break-Before-Make time setting

(BBMTIME=0, BBMCLKS=0).

In case slower slopes have to be used, e.g. with large MOSFETs, ensure that the break-before-make

time (BBMTIME, optionally use BBMCLKS for times >200ns) sufficiently covers the switching event, in

order to avoid bridge cross conduction. The shortest break-before-make time, safely covering the

switching event, gives best results. Add roughly 30% of reserve, to cover production stray of MOSFETs

and driver.

TMC5160 DATASHEET (Rev. 1.01 / 2017-NOV-29) 19

www.trinamic.com

3.4 Tuning the MOSFET Bridge

A clean switching event is favorable to ensure low power dissipation and good EMC behavior.

Unsuitable layout or components endanger stable operation of the circuit. Therefore, it is important to

understand the effect of parasitic trace inductivity and MOSFET reverse recovery.

Stray inductance in power routing will cause ringing whenever the opposite MOSFET is in diode

conduction prior to switching on a low-side MOSFET or high-side MOSFET. Diode conduction occurs

during break-before make time when the load current is inverse to the prior bridge polarity, i.e.

following a fast decay cycle. The MOSFET bulk diode has a certain, type specific reverse recovery time

and charge. This time typically is in the range of a few 10ns. During reverse recovery time, the bulk

diode will cause high current flow across the bridge. This current is taken from the power supply

filter capacitors (see thick lines Figure 3.5). Once the diode opens parasitic inductance tries to keep the

current flowing. A high, fast slope results and leads to ringing in all parasitic inductivities (see Figure

3.6). This may lead to bridge voltage undershooting the GND level. It must be ensured, that the driver

IC does not see spikes on its BM pins to GND going below -5V. Measure the voltage directly at the

driver pins to driver GND. The amount of undershooting depends on energy stored in parasitic

inductivities from low side drain to low side source and via the sense resistor RS to GND.

To improve behavior

- Tune MOSFET switching slopes (measure without inductive load) to be slower than the MOSFET

bulk diode reverse recovery time. This will reduce cross conduction.

- Add optional resistors and capacitors to ensure clean switching by minimizing ringing and

reliable operation. Figure 3.5 shows different options.

- Some MOSFETs eliminate this problem by integrating a Schottky diode from source to drain.

Figure 3.7 shows performance of the basic circuit after adapting switching slope and adding 1nF

bridge output capacitors.

GNDD

GNDA

DIE PAD

BMA2

SRAH

Capacitor reduces

ringing on sense resistor.

SRAL

LA1

LA2

HA1

HA2

BMA1

CA1

CA2

‘: optional position for high side slope control resistor.

In case, severe undershooting < -5V of BM occurs at BM

terminal, R

’ will protect the driver.

1µF

Coil

out

47R

‘

Decide use and value of the additional components based on measurements of the actual circuit using the final layout!

100n

1n,

100V

1n,

100V

470pF to a few nF output

capacitors close to bridge reduce

ringing and improve EMC

2n2

RC-Filter protects SRAH /

SRAL and reduces spikes

seen by the chopper

Additional 1A type Schottky Diodes (selected for full VM

range) in combination with R

’ eliminate undershooting of

BM and allow for lower values of R

‘ (e.g., 2R2 to 4R7).

Figure 3.5 Bridge protection options for power routing inductivity

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