LMP91050配置式AFE在NDIR传感应用
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"TI-LMP91050.pdf" 是一份关于TI公司的LMP91050可配置模拟前端(AFE)芯片的文档，适用于非分散红外(NDIR)传感应用。
LMP91050是一款专为热电堆传感器设计的可编程集成模拟前端，常见于非分散红外应用中。它为热电堆传感器和微控制器之间提供了完整的信号路径解决方案，输出电压与热电堆电压成正比。该芯片的主要特点和功能包括：
1. **可编程增益放大器**：LMP91050具有广泛的增益设置范围，从167到7986V/V，允许用户根据不同的传感器需求进行调整。
2. **暗信号偏置消除**：这个特性有助于补偿在没有红外辐射时的信号，提高测量的准确性和稳定性。
3. **支持外部滤波**：用户可以外接滤波元件，以适应不同频率范围的滤波需求，优化系统性能。
4. **公共模式发生器和8位DAC**：通过8位数字模拟转换器(DAC)，实现对公共模式噪声的精确控制，提高信号质量。
5. **低噪声性能**：在0.1至10Hz的频率范围内，LMP91050的噪声低至0.1μVRMS，确保了高精度的信号读取。
6. **规格参数**：还包括其他技术规格，如增益精度、噪声水平等，这些参数对于理解和评估芯片在实际应用中的表现至关重要。
此外，文档还提供了技术文档、工具软件、支持和社区资源，帮助开发者进行样品购买、设计和问题解决。LMP91050的灵活性使得单一设计就能支持多种热电堆传感器，简化了系统设计并降低了成本。
在电路图中，可以看到LMP91050的接口包括IN（输入）、OUT（输出）、CSB（片选）、SDIO（串行数据输入/输出）、SCLK（串行时钟）、A0和A1（可能用于配置的数字输入）、GND（接地）、VDD（电源）、以及CMOUT（公共模式输出）。这些引脚连接到外部元件，如电容、电阻和热电堆，共同构建一个完整的信号处理系统。
总体来说，LMP91050是一款为NDIR传感应用设计的高性能模拟前端，它的可编程特性和优秀的噪声性能使其成为热电堆传感器应用的理想选择。
LMP91050
SNAS517E –NOVEMBER 2011 –REVISED SEPTEMBER 2015
www.ti.com
Electrical Characteristics (continued)
The following specifications apply for VDD = 3.3 V, VCM = 1.15 V, unless otherwise specified. All other limits apply to T
A
= T
J
= +25°C.
(1)
PARAMETER TEST CONDITIONS MIN
(2)
TYP
(3)
MAX
(2)
UNIT
TCCGE Gain temp coefficient
(5)
T
A
= –40°C to +85°C 100 ppm/°C
PSRR Power supply rejection ratio DC, 3-V to 3.6-V supply, gain = 1002 V/V 90 110 dB
1-mV input step signal, Gain = 1002,
PhDly Phase delay
V
OUT
measured at Vdd/2 9 µs
Phase delay variation with 1-mV input step signal, Gain=1002, V
OUT
TCPhDly
temperature
(6)
measured at Vdd/2, T
A
= –40°C to +85°C 500 ns
Gain = 167 V/V, T
A
= –40°C to +85°C –0.525 0.525
Gain = 335 V/V, T
A
= –40°C to +85°C –0.6 0.6
Gain = 669 V/V, T
A
= –40°C to +85°C –0.9 0.9
Gain = 1335 V/V, T
A
= –40°C to +85°C –1.5 1.5
Output offset voltage
TCVOS mV/°C
temperature drift
(5)
Gain = 1002 V/V, T
A
= –40°C to +85°C –1.2 1.2
Gain = 2004 V/V, T
A
= –40°C to +85°C –1.9 1.9
Gain = 4003 V/V, T
A
= –40°C to +85°C –3.7 3.7
Gain = 7986V/V, T
A
= –40°C to +85°C –7.1 7.1
COMMON-MODE GENERATOR
Programmable, see Common-Mode 1.15 or
VCM Common-mode voltage V
Generation 2.59
VCM accuracy 2%
CLOAD CMOut load capacitance 10 nF
(5) TCCGE and TCVOS are calculated by taking the largest slope between -40°C and 25°C linear interpolation and 25°C and 85°C linear
interpolation.
(6) TCPhDly is largest change in phase delay between -40°C and 25°C measurements and 25°C and 85°C measurements.
7.6 SPI Interface
The following specifications apply for VDD = 3.3 V, VCM = 1.15 V, C
L
= 15 pF, unless otherwise specified. All other limits
apply to T
A
= T
J
= +25°C.
(1)
PARAMETER TEST CONDITIONS MIN
(2)
TYP
(3)
MAX
(2)
UNIT
V
IH
Logic input high 0.7 × VDD V
V
IL
Logic input low 0.8 V
V
OH
Logic output high 2.6 V
V
OL
Logic output low 0.4 V
–100 100
IIH/IIL Input digital leakage current nA
T
A
= –40°C to +85°C –200 200
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where T
J
> T
A
. Absolute Maximum Ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using
statistical quality control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
7.7 Timing Characteristics
The following specifications apply for VDD = 3.3 V, VCM = 1.15 V, C
L
= 15 pF, unless otherwise specified. All other limits
apply to T
A
= T
J
= +25°C.
(1)
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where T
J
> T
A
. Absolute Maximum Ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
6 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: LMP91050
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