LPCVD-SiNx钝化与高温凹槽工艺提升常关硅上GaN MIS-HEMT性能

需积分: 16 34 浏览量更新于2024-08-12 收藏 4.34MB PDF 举报

本文主要探讨了在常关模式下，利用低压化学气相沉积(LEPVD)二氧化硅(SiNx)钝化技术和高温栅极凹槽工艺制造的硅基(GaN-on-Si)金属绝缘体半导体场效应晶体管(MIS-HEMT)的研究进展。该研究团队通过精密设计，旨在实现低阈值电压(VTH)、高电子迁移率以及优异的开关性能。 LPCVD-SiNx钝化技术在文章中起到了关键作用，由于其具有出色的热稳定性，使得能够在氧化过程之前进行钝化，从而有效抑制了在钝化层与HEMT界面处的深层陷阱。这种钝化策略有助于减少漏电流，提升器件的可靠性。所制备的MIS-HEMTs在1微安每平方米的漏电流下，展现出高达0.85伏的阈值电压，显示出显著的开/关比，达到了10¹⁰，这在业界是相当出色的性能指标。相比之下，采用等离子增强化学气相沉积(PECVD)二氧化硅的钝化方法，虽然在动态ON电阻方面可能表现良好，但在减小漏电流和提升开关性能方面，LPCVD-SiNx明显更具优势。文章还提到，这些MIS-HEMTs实现了高达180厘米²/伏特·秒的高场效应通道迁移率，这意味着它们在高压工作条件下具有更强的电荷控制能力。此外，高温栅极凹槽技术的应用使得器件的制程更为精确，减少了制程对晶体管性能的影响，进一步提高了器件的整体性能。这项研究成果对于推动GaN-on-Si技术的发展，尤其是在高性能、低功耗的电子设备中应用具有重要意义，如射频功率放大器、高频逻辑电路等。这篇研究论文详细阐述了一种创新的MIS-HEMT设计，它结合了LPCVD-SiNx钝化和高温栅极凹槽技术，为硅基GaN器件的高性能和稳定性提供了新的解决方案。这一突破性工作不仅提升了器件的性能参数，也对硅基GaN技术的未来应用前景产生了积极影响。

614 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 2, FEBRUARY 2016

Normally OFF GaN-on-Si MIS-HEMTs Fabricated

With LPCVD-SiN

Passivation and

High-Temperature Gate Recess

Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao,

Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen,

Qi Zhou, Bo Zhang, Member, IEEE,andXinyuLiu

Abstract—Low-current-collapse normally OFF GaN-on-Si MIS

high-electron-mobility transistors (MIS-HEMTs) are fabricated

with low-pressure chemical-vapor-deposited SiN

(LPCVD-SiN

)

passivation and high-temperature low-damage gate-recess tech-

nique. The high-thermal-stability LPCVD-SiN

enables a

passivation-prior-to-ohmic process strategy and effectively sup-

presses deep states at the passivation/HEMT interface. The

fabricated MIS-HEMTs feature a high V

of +0.85 V at the

drain current of 1 µA/mm and a remarkable

ON/OFF current

ratio of 10

while reduced dynamic ON-resistance as compared

to plasma-enhanced chemical-vapor-deposited SiO

passivation.

High ﬁeld-effect channel mobility of 180 cm

/V ·sisachieved,

leading to a high maximum drain current density of 663 mA/mm.

Index Terms— Current collapse, GaN-on-Si, high-temperature

low-damage gate recess, low-pressure chemical-vapor-deposited

SiN

(LPCVD-SiN

), MIS high-electron-mobility transistors

(MIS-HEMTs), normally

OFF.

I. Introduction

WING to the wide energy bandgap and high

electron saturation velocity, and especially the

polarization-induced high mobility and density 2-D electron

Manuscript received July 31, 2015; accepted December 17, 2015. Date of

publication January 6, 2016; date of current version January 20, 2016.

This work was supported in part by the Fundamental Research Funds

for the Central Universities under Grant ZYGX2013J037, in part by the

Major Program of the National Natural Science Foundation of China under

Grant 61234006, Grant 61404156, Grant 61474138, Grant 61534007, and

Grant 61527816, in part by the Project National 1000 Young Talents Plan

of China, and in part by the Opening Project of Key Laboratory of Micro-

electronics Devices and Integrated Technology, Institute of Microelectronics,

Chinese Academy of Sciences. The review of this paper was arranged by

Editor S. Bandyopadhyay.

Y. Shi, J. Zhang, W. Chen, Q. Zhou, and B. Zhang are with the State Key

Laboratory of Electronic Thin Films and Integrated Devices, University of

Electronic Science and Technology of China, Chengdu 610054, China

(e-mail: 201321030205@std.uestc.edu.cn; zhangjinhan@ime.ac.cn;

wjchen@uestc.edu.cn; zhouqi@uestc.edu.cn; zhangbo@uestc.edu.cn).

S. Huang, Q. Bao, X. Wang, K. Wei, H. Jiang, J. Li, C. Zhao, and X. Liu

are with the Key Laboratory of Microelectronics Devices and Integrated

Technology, Institute of Microelectronics, Chinese Academy of Sciences,

Beijing 100029, China (e-mail: huangsen@ime.ac.cn; baoqilong@ime.ac.cn;

wangxinhua@ime.ac.cn; weike@ime.ac.cn; jianghaojie@ime.ac.cn;

lijunfeng@ime.ac.cn; zhaochao@ime.ac.cn; xyliu@ime.ac.cn).

S. Li, Y. Zhou, H. Gao, Q. Sun, and H. Yang are with the Key

Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-

Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123,

China (e-mail: smli2013@sinano.ac.cn; yzhou2008@sinano.ac.cn;

hwgao2013@sinano.ac.cn; qsun2011@sinano.ac.cn; hyang2006@

sinano.ac.cn).

Color versions of one or more of the ﬁgures in this paper are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/TED.2015.2510630

gases (2-DEGs) within the AlGaN/GaN heterointerface,

GaN-based high-electron-mobility transistors (HEMTs)

and MIS HEMTs (MIS-HEMTs) have attracted worldwide

attention in power electronics which require high breakdown

voltage (BV) and high power conversion efﬁciency [1]–[4].

Normally

off, or enhancement-mode (E-mode) devices are

highly preferred in power conversion systems because of the

requirement of fail-safe operation. The major challenge to

realize the E-mode for AlGaN/GaN HEMTs/MIS-HEMTs

is the depletion of the high-density 2-DEG. Several tech-

nologies have been developed for normally

off GaN-based

devices, including gate recess [5]–[11], gate injection

transistor (GIT) [4], [12]–[14], ﬂuorine plasma ion

implantation [15]–[17], and trigate technique [18]. High

threshold (V

) over 3 V (through linear extrapolation

of transfer curves) has been demonstrated with the gate

recess [7], [8], F implantation [16], and even the GIT with

Schottky-type gate [14]. Meanwhile, with the advancement

of GaN-on-Si epitaxy and fabrication technology, BV over

600 V can readily be achieved [1], [3], [4], which ensures

high-voltage power switching applications.

For the recessed-gate structure, inductively coupled

plasma (ICP) dry etching is the most attractive technique

owing to its anisotropy etching and efﬁciency. However, there

are still several challenges to facilitate the acceptance of it

in the industry, such as low uniformity and nonnegligible

plasma damage caused by ICP dry etching. In this regard, a

high-temperature gate-recess method is proposed to promote

in situ desorption of chlorine-based etching residues and

recovery of lattice damages [10], [19]. Assisted by high-quality

-sourced atomic-layer-deposited (ALD) Al

gate dielec-

tric, high-drive-current AlGaN/GaN MIS-HEMTs with V

+1.6 V (through linear extrapolation) are fabricated, in which

athickSiO

layer grown by plasma-enhanced chemical vapor

deposition (PECVD) as the passivation as well as ICP etching

mask. Large current collapse occurs in the devices at drain bias

higher than 40 V, which may be due to the oxidation of AlGaN

barrier surface during ohmic annealing and SiO

passivation.

Dynamic

on-resistance (R

) is of critical importance to

the reliability of power devices. Assisted by multiple ﬁeld

plates, the dynamic R

in GaN-on-Si MIS-HEMTs is well

suppressed with the traditional PECVD-SiN

passivation [3].

Meanwhile, Tang et al. [16] adopted charge-polarized AlN,

grown by plasma-enhanced ALD, to realize an effective

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

下载后可阅读完整内容，剩余5页未读，立即下载

weixin_38731199

粉丝: 7
资源: 928

LPCVD-SiNx钝化与高温凹槽工艺提升常关硅上GaN MIS-HEMT性能

LPCVD和PECVD-SiNx钝化的AlGaN / GaN HEMT的比较研究

用于AlGaN / GaN MIS-HEMT的LPCVD-SiNx栅极电介质与III型氮化物之间的界面研究

低压化学气相沉积法生长的GaN（cap）/ AlGaN / AlN / GaN异质结构与SiNx栅介电层之间的界面陷阱和固定电荷的研究

lpcvd sipos 沉积

芯片制造的优化有哪些化学手段 请分点详细列举

行业资料-电子功用-半导体薄膜的制造方法和采用所述薄膜的磁电转换元件的介绍分析.rar

LPCVD培训教程.pdf

无凹槽的AlGaN / GaN横向肖特基势垒控制肖特基整流器，具有低导通电压和高反向阻断

PECVD减反膜技术PPT课件.pptx

TopCon高效电池应用及关键设备—LPCVD.pdf

最新资源

芯片制造的优化有哪些化学手段请分点详细列举