LPCVD-SiNx钝化与高温凹槽工艺提升常关硅上GaN MIS-HEMT性能
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本文主要探讨了在常关模式下，利用低压化学气相沉积(LEPVD)二氧化硅(SiNx)钝化技术和高温栅极凹槽工艺制造的硅基(GaN-on-Si)金属绝缘体半导体场效应晶体管(MIS-HEMT)的研究进展。该研究团队通过精密设计，旨在实现低阈值电压(VTH)、高电子迁移率以及优异的开关性能。
LPCVD-SiNx钝化技术在文章中起到了关键作用，由于其具有出色的热稳定性，使得能够在氧化过程之前进行钝化，从而有效抑制了在钝化层与HEMT界面处的深层陷阱。这种钝化策略有助于减少漏电流，提升器件的可靠性。所制备的MIS-HEMTs在1微安每平方米的漏电流下，展现出高达0.85伏的阈值电压，显示出显著的开/关比，达到了10¹⁰，这在业界是相当出色的性能指标。
相比之下，采用等离子增强化学气相沉积(PECVD)二氧化硅的钝化方法，虽然在动态ON电阻方面可能表现良好，但在减小漏电流和提升开关性能方面，LPCVD-SiNx明显更具优势。文章还提到，这些MIS-HEMTs实现了高达180厘米²/伏特·秒的高场效应通道迁移率，这意味着它们在高压工作条件下具有更强的电荷控制能力。
此外，高温栅极凹槽技术的应用使得器件的制程更为精确，减少了制程对晶体管性能的影响，进一步提高了器件的整体性能。这项研究成果对于推动GaN-on-Si技术的发展，尤其是在高性能、低功耗的电子设备中应用具有重要意义，如射频功率放大器、高频逻辑电路等。
这篇研究论文详细阐述了一种创新的MIS-HEMT设计，它结合了LPCVD-SiNx钝化和高温栅极凹槽技术，为硅基GaN器件的高性能和稳定性提供了新的解决方案。这一突破性工作不仅提升了器件的性能参数，也对硅基GaN技术的未来应用前景产生了积极影响。
614 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 2, FEBRUARY 2016
Normally OFF GaN-on-Si MIS-HEMTs Fabricated
With LPCVD-SiN
x
Passivation and
High-Temperature Gate Recess
Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao,
Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen,
Qi Zhou, Bo Zhang, Member, IEEE,andXinyuLiu
Abstract—Low-current-collapse normally OFF GaN-on-Si MIS
high-electron-mobility transistors (MIS-HEMTs) are fabricated
with low-pressure chemical-vapor-deposited SiN
x
(LPCVD-SiN
x
)
passivation and high-temperature low-damage gate-recess tech-
nique. The high-thermal-stability LPCVD-SiN
x
enables a
passivation-prior-to-ohmic process strategy and effectively sup-
presses deep states at the passivation/HEMT interface. The
fabricated MIS-HEMTs feature a high V
TH
of +0.85 V at the
drain current of 1 µA/mm and a remarkable
ON/OFF current
ratio of 10
10
while reduced dynamic ON-resistance as compared
to plasma-enhanced chemical-vapor-deposited SiO
2
passivation.
High field-effect channel mobility of 180 cm
2
/V ·sisachieved,
leading to a high maximum drain current density of 663 mA/mm.
Index Terms— Current collapse, GaN-on-Si, high-temperature
low-damage gate recess, low-pressure chemical-vapor-deposited
SiN
x
(LPCVD-SiN
x
), MIS high-electron-mobility transistors
(MIS-HEMTs), normally
OFF.
I. Introduction
O
WING to the wide energy bandgap and high
electron saturation velocity, and especially the
polarization-induced high mobility and density 2-D electron
Manuscript received July 31, 2015; accepted December 17, 2015. Date of
publication January 6, 2016; date of current version January 20, 2016.
This work was supported in part by the Fundamental Research Funds
for the Central Universities under Grant ZYGX2013J037, in part by the
Major Program of the National Natural Science Foundation of China under
Grant 61234006, Grant 61404156, Grant 61474138, Grant 61534007, and
Grant 61527816, in part by the Project National 1000 Young Talents Plan
of China, and in part by the Opening Project of Key Laboratory of Micro-
electronics Devices and Integrated Technology, Institute of Microelectronics,
Chinese Academy of Sciences. The review of this paper was arranged by
Editor S. Bandyopadhyay.
Y. Shi, J. Zhang, W. Chen, Q. Zhou, and B. Zhang are with the State Key
Laboratory of Electronic Thin Films and Integrated Devices, University of
Electronic Science and Technology of China, Chengdu 610054, China
(e-mail: 201321030205@std.uestc.edu.cn; zhangjinhan@ime.ac.cn;
wjchen@uestc.edu.cn; zhouqi@uestc.edu.cn; zhangbo@uestc.edu.cn).
S. Huang, Q. Bao, X. Wang, K. Wei, H. Jiang, J. Li, C. Zhao, and X. Liu
are with the Key Laboratory of Microelectronics Devices and Integrated
Technology, Institute of Microelectronics, Chinese Academy of Sciences,
Beijing 100029, China (e-mail: huangsen@ime.ac.cn; baoqilong@ime.ac.cn;
wangxinhua@ime.ac.cn; weike@ime.ac.cn; jianghaojie@ime.ac.cn;
lijunfeng@ime.ac.cn; zhaochao@ime.ac.cn; xyliu@ime.ac.cn).
S. Li, Y. Zhou, H. Gao, Q. Sun, and H. Yang are with the Key
Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-
Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123,
China (e-mail: smli2013@sinano.ac.cn; yzhou2008@sinano.ac.cn;
hwgao2013@sinano.ac.cn; qsun2011@sinano.ac.cn; hyang2006@
sinano.ac.cn).
Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TED.2015.2510630
gases (2-DEGs) within the AlGaN/GaN heterointerface,
GaN-based high-electron-mobility transistors (HEMTs)
and MIS HEMTs (MIS-HEMTs) have attracted worldwide
attention in power electronics which require high breakdown
voltage (BV) and high power conversion efficiency [1]–[4].
Normally
off, or enhancement-mode (E-mode) devices are
highly preferred in power conversion systems because of the
requirement of fail-safe operation. The major challenge to
realize the E-mode for AlGaN/GaN HEMTs/MIS-HEMTs
is the depletion of the high-density 2-DEG. Several tech-
nologies have been developed for normally
off GaN-based
devices, including gate recess [5]–[11], gate injection
transistor (GIT) [4], [12]–[14], fluorine plasma ion
implantation [15]–[17], and trigate technique [18]. High
threshold (V
TH
) over 3 V (through linear extrapolation
of transfer curves) has been demonstrated with the gate
recess [7], [8], F implantation [16], and even the GIT with
Schottky-type gate [14]. Meanwhile, with the advancement
of GaN-on-Si epitaxy and fabrication technology, BV over
600 V can readily be achieved [1], [3], [4], which ensures
high-voltage power switching applications.
For the recessed-gate structure, inductively coupled
plasma (ICP) dry etching is the most attractive technique
owing to its anisotropy etching and efficiency. However, there
are still several challenges to facilitate the acceptance of it
in the industry, such as low uniformity and nonnegligible
plasma damage caused by ICP dry etching. In this regard, a
high-temperature gate-recess method is proposed to promote
in situ desorption of chlorine-based etching residues and
recovery of lattice damages [10], [19]. Assisted by high-quality
O
3
-sourced atomic-layer-deposited (ALD) Al
2
O
3
gate dielec-
tric, high-drive-current AlGaN/GaN MIS-HEMTs with V
TH
of
+1.6 V (through linear extrapolation) are fabricated, in which
athickSiO
2
layer grown by plasma-enhanced chemical vapor
deposition (PECVD) as the passivation as well as ICP etching
mask. Large current collapse occurs in the devices at drain bias
higher than 40 V, which may be due to the oxidation of AlGaN
barrier surface during ohmic annealing and SiO
2
passivation.
Dynamic
on-resistance (R
on
) is of critical importance to
the reliability of power devices. Assisted by multiple field
plates, the dynamic R
on
in GaN-on-Si MIS-HEMTs is well
suppressed with the traditional PECVD-SiN
x
passivation [3].
Meanwhile, Tang et al. [16] adopted charge-polarized AlN,
grown by plasma-enhanced ALD, to realize an effective
0018-9383 © 2016 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
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