Nanosecond polymer Mach-Zehnder interferometer electro-optic 281
2 Structure and optimization
2.1 Device structure
The schematic illustration of the designed polymer MZI EO modulator is shown in Fig. 1a,
which consists of a 3-dB Y-branch splitter, an MZI EO region and a 3-dB Y-branch cou-
pler. The modulator is equipped with MSL electrode, which contains a pair of electrodes on
two MZI arms and a grounded electrode. For increasing cutoff modulatoring frequency, the
MSL electrode is configured to be traveling-wave style with a load resister Z
L
= 50 .The
switching or modulation signal generated by a bias-tee driver, which has a direct current bias
for adjusting the device to be 3-dB state, is supplied to the MSL electrode. The EO active
region length is L
EO
, and the gap between the two MZI arms is d. The electrode width and
gapintheMZIregionareW and G, respectively. The input power and output power are
denoted by P
in
and P
out
, respectively.
The cross-section view AA’ in EO active region is shown in Fig. 1c. The poling directions
of the two rib cores are opposite, as labeled in the figure. Silicon is used as substrate; the
DR1 chromophore doped EO polymer DR1/SU-8 is used as core; the upper and under buffer
0.0
0.5
1.0
1.5
2.0
800 1000 1200 1400 1600
1.570
1.575
1.580
1.585
1.620
1.625
1.630
1.635
SU-8
κ
2
κ
1
n
1
n
2
Extinction Coefficient
κ
Refractive Index
n
Wavelength
λ
(nm)
DR1/SU-8
L
EO
d
G
W
P
out
P
in
Bias- Tee dri ver
A
A
'
W
MSL el ect rode
Z
L
(a)
(b)
(1)
S
S
U
G
W
upper confined layer
n
40
,
α
40
Si substrate
upper buffer layer
under buffer layer
EO
core
n
10
,
α
10
n
20
,
α
20
n
20
,
α
20
n
30
,
κ
30
Al electrode
b
4
b
2
b
1
b
3
a
d
W
y
x
O
(2) (3)
(4)
n
50
under electrode
n
30
,
κ
30
(5)
(6)
(7)
(8)
poling direction
(c)
Fig. 1 a Schematic illustration of the fabricated polymer MZI EO modulator, b the measured refractive indi-
ces and bulk extinction coefficients of SU-8 and DR1/SU-8, and c cross-section view AA’ in the EO active
region
123
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