bq24196
SLUSB98 –OCTOBER 2012
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ELECTRICAL CHARACTERISTICS (continued)
V
VBUS_UVLOZ
< V
VBUS
< V
ACOV
and V
VBUS
> V
BAT
+ V
SLEEP
, T
J
= –40°C to 125°C and T
J
= 25°C for typical values unless other
noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
POWER PATH MANAGEMENT
Isys = 0A, Q4 off, V
BAT
up to 4.2 V,
V
SYS_RANGE
System regulation voltage 3.5 4.35 V
REG01[3:1]=101, V
SYSMIN
= 3.5 V
V
SYS_MIN
System voltage output REG01[3:1]=101, V
SYSMIN
= 3.5 V 3.55 3.65 V
Internal top reverse blocking MOSFET on-
R
ON(RBFET)
Measured between VBUS and PMID 23 38 mΩ
resistance
T
J
= –40°C – 85°C 30 38
Internal top switching MOSFET on-
R
ON(HSFET)
mΩ
resistance between PMID and SW
T
J
= -40°C – 125°C 30 48
T
J
= –40°C – 85°C 35 48
Internal bottom switching MOSFET on-
R
ON(LSFET)
mΩ
resistance between SW and PGND
T
J
= -40°C – 125°C 35 51
BATFET forward voltage in supplement
V
FWD
BAT discharge current 10mA 30 mV
mode
V
SYS_BAT
SYS/BAT Comparator V
SYS
falling 90 mV
V
BATGD
Battery good comparator rising threshold V
BAT
rising 3.4 3.55 3.7 V
V
BATGD_HYST
Battery good comparator falling threshold V
BAT
falling 100 mV
BATTERY CHARGER
V
BAT_REG_ACC
Charge voltage regulation accuracy V
BAT
= 4.208V –0.5% 0.5%
V
BAT
= 3.8V, I
CHG
= 1792mA, T
J
= 25°C –4% 4%
I
ICHG_REG_ACC
Fast charge current regulation accuracy
V
BAT
= 3.8V, I
CHG
= 1792mA, T
J
= –20°C – 125°C –7% 7%
I
CHG_20pct
Charge current with 20% option on V
BAT
= 3.1V, I
CHG
= 104mA, REG02=03 75 100 125 mA
V
BATLOWV
Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V
V
BATLOWV_HYST
Battery LOWV rising threshold Precharge to fast charge, REG04[1] = 1 2.8 3.0 3.1 V
I
PRECHG_ACC
Precharge current regulation accuracy VBAT = 2.6V, I
CHG
= 256mA –20% 20%
I
TERM_ACC
Termination current accuracy I
TERM
= 256mA, I
CHG
= 960mA –20% 20%
V
SHORT
Battery Short Voltage VBAT falling 1.8 V
V
SHORT_HYST
Battery Short Voltage hysteresis VBAT rising 200 mV
I
SHORT
Battery short current VBAT<2.2V 100 mA
V
RECHG
Recharge threshold below VBAT_REG VBAT falling, REG04[0] = 0 100 mV
t
RECHG
Recharge deglitch time VBAT falling, REG04[0]=0 20 ms
T
J
= 25°C 12 15
R
ON_BATFET
SYS-BAT MOSFET on-resistance mΩ
T
J
= –40°C – 125°C 12 20
INPUT VOLTAGE/CURRENT REGULATION
V
INDPM_REG_ACC
Input voltage regulation accuracy –2% 2%
USB100 85 100 mA
USB150 125 150 mA
USB Input current regulation limit, VBUS =
I
USB_DPM
5V, current pulled from SW
USB500 440 500 mA
USB900 750 900 mA
I
ADPT_DPM
Input current regulation accuracy Input current limit 1.5A 1.4 1.5 1.6 A
I
IN_START
Input current limit during system start up VSYS<2.2V 100 mA
K
ILIM
I
IN
= K
ILIM
/R
ILIM
IINDPM = 1.5A 440 485 530 A x Ω
BAT OVER-VOLTAGE PROTECTION
V
BATOVP
Battery over-voltage threshold V
BAT
rising, as percentage of V
BAT_REG
104%
V
BATOVP_HYST
Battery over-voltage hysteresis V
BAT
falling, as percentage of V
BAT_REG
2%
Battery over-voltage deglitch time to disable
t
BATOVP
1 µs
charge
THERMAL REGULATION AND THERMAL SHUTDOWN
T
Junction_REG
Junction temperature regulation accuracy REG06[1:0] = 11 115 120 125 °C
T
SHUT
Thermal shutdown rising temperature Temperature increasing 160 °C
T
SHUT_HYS
Thermal shutdown hysteresis 30 °C
Thermal shutdown rising deglitch Temperature increasing delay 1 ms
Thermal shutdown falling deglitch Temperature decreasing delay 1 ms
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