GaN-on-Si功率电子技术：高性能E模式混合MOS-HFET与横向二极管

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"这篇研究论文详细探讨了用于功率电子领域的GaN-on-Si（氮化镓硅基）器件技术，特别是增强模式的混合MOS-HFET（金属氧化物半导体高电子迁移率晶体管）和横向二极管。通过后氧化层退火工艺调控介电/氮化镓正界面固定电荷（Qit+），E-mode Al2O3/GaN 混合MOS-HFET实现了更好的阈值电压（VTH）控制与漏电流驱动能力之间的平衡，有效抑制了Qit+及其相关的远程散射效应。由于其独特的高阈值电压和门摆动特性，E-mode MOS-HFET在故障开启免疫力方面表现出显著提升，这有利于提高设备在功率切换应用中的可靠性，并简化门驱动器设计。同时，文中还介绍了一种新型的AlGaN/GaN横向二极管，它具有独特的特性，对于功率电子系统的设计具有重要意义。" 本文是IEEE Transactions on Industrial Electronics期刊2017年11月刊的一篇学术论文，主要研究内容集中在GaN-on-Si技术上，这是一种在硅基材上生长氮化镓的半导体技术，旨在优化功率电子设备的性能。增强模式（E-mode）的混合MOS-HFET是一种新型的场效应晶体管，其优势在于能够更好地控制阈值电压并提供强大的漏电流驱动能力。通过精细调控介电层和氮化镓界面的固定电荷，可以降低不必要的散射效应，从而提升器件的效率。此外，这种E-mode MOS-HFET的阈值电压高，门摆动特性优良，使得它在应对电源开关应用时，具有更高的故障抗扰度，这意味着设备在工作时更稳定，更不容易因偶然的电压波动而失效。这对功率电子设备的可靠性至关重要，同时，由于其良好的特性，使得门驱动器的设计也变得更加简单。另一方面，论文还提出了AlGaN/GaN横向二极管，这种二极管具有独特的优势，可能对功率电子系统的整体性能有显著提升。虽然具体内容没有详述，但可以推测这种二极管设计可能在电流控制、热管理或快速响应等方面有所创新。这篇论文为功率电子领域带来了新的技术突破，通过优化GaN-on-Si器件的结构和工艺，提升了功率转换的效率和可靠性，对未来的功率电子设备设计有着重要的参考价值。

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 64, NO. 11, NOVEMBER 2017 8971

Device Technologies of GaN-on-Si for Power

Electronics: Enhancement-Mode Hybrid

MOS-HFET and Lateral Diode

Qi Zhou, Member, IEEE, Yi Yang, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang, Member, IEEE

Abstract—In this paper, a high performance

enhancement-mode (E-mode) Al

/GaN hybrid MOS-

HFET and a novel AlGaN/GaN lateral diode are experi-

mentally demonstrated. Based on the proposed approach

to engineer the dielectric/GaN positive interface ﬁxed

charges (Q

) by postdielectric annealing, the E-mode

metal–oxide–semiconductor heterojunction ﬁeld-effect

transistor (MOS-HFET) obtains a better tradeoff between

the threshold voltage (V

) control and drain current

drive capability due to the signiﬁcant suppression of Q

and the associated remote scattering effect. Owing to the

uniquely high V

and gate swing, the E-mode MOS-HFET

exhibits respectable higher faulty turn on immunity that

is prone to improve the reliability of the device in power

switching applications and simplify the gate driver design.

On the other hand, by featuring a new turn-on mechanism

of MIS-gate-controlled 2-D electron gas (2DEG) channel, the

diode exhibits ultralow turn-on voltage and reverse leakage

current, which are beneﬁcial to lowering the conduction

loss and off-state power consumption of GaN-on-Si power

diodes. Moreover, the diode is compatible with E-mode

hybrid MOS-HFET, which is promising for realizing full-GaN

single-chip power ICs.

Index Terms—AlGaN/GaN HFET, AlGaN/GaN diode,

breakdown voltage (BV), enhancement-mode (E-mode),

GaN hybrid metal–oxide–semiconductor heterojunction

ﬁeld-effect transistor (MOS-HFET), gate recess, hybrid an-

ode, interface ﬁxed charges, low turn-on voltage, threshold

voltage.

I. INTRODUCTION

HE unique material properties of gallium nitride (GaN)

have excellent ﬁgures-of-merit for utilizing electron de-

vices which have been of great interest to scientists and engi-

neers for the past two decades. In the case of lateral devices,

Manuscript received July 17, 2016; revised September 29, 2016 and

November 11, 2016; accepted November 29, 2016. Date of publication

January 16, 2017; date of current version October 9, 2017. This work

was supported in part by the National Natural Science Foundation of

China under Grant 61234006, Grant 61674024, and Grant 61306102,

and in part by the opening project of the State Key Laboratory of Elec-

tronic Thin Films and Integrated Devices under Grant KFJJ201609. (Cor-

responding author: Qi Zhou.)

The authors are with the S tate Key Laboratory of E lectronic Thin Films

and Integrated Devices, University of Electronic Science and Technol-

ogy of China, Chengdu 610054, China (e-mail: zhouqi@uestc.edu.cn;

1015281809@qq.com; 1163695222@qq.com; 735574547@qq.com;

wjchen@uestc.edu.cn; zhangbo@uestc.edu.cn).

Color versions of one or more of the ﬁgures in this paper are available

online at http://ieeexplore.ieee.org

Digital Object Identiﬁer 10.1109/TIE.2017.2652373

the most distinctive feature of GaN-based materials is the high

density (e.g., ∼ 1 × 10

−2

) 2-D electron gas (2DEG) gen-

erated at the interface of an AlGaN/GaN heterojunction with

high electron mobility as high as ∼2000 cm

/V·s at room

temperature [1] due to its strong piezoelectric and sponta-

neous polarization effect [2]. Therefore, the AlGaN/GaN hybrid

metal–oxide–semiconductor heterojunction ﬁeld-effect transis-

tor (MOS-HFET) is capable of achieving high switching speed,

low switching loss, low conduction loss, and high breakdown

voltage (BV), which are highly preferred for both RF [3] and

power electronic applications [4]. For power electronics, the

AlGaN/GaN on Si substrate has been considered as a promis-

ing approach for next-generation power devices with low cost

and high performance. First of all, the large diameter of Al-

GaN/GaN wafer up to 8 in can be grown on silicon (1 1 1) sub-

strate [5]–[7] and the commercial products have been available

(e.g., EpiGaN, Enkris), which paves the way for the mass pro-

duction of low-cost AlGaN/GaN power devices. Moreover, the

well-developed CMOS compatible process enables the fabrica-

tion of AlGaN/GaN power devices with the mainstream CMOS

fabrication lines that avoids additional investment in fabrication

facilities [8], [9]. Above two features indicate that AlGaN/GaN

on Si is of great potential for future low-cost and energy-efﬁcient

power applications. Besides featuring the superior power per-

formance, GaN power devices can be monolithically integrated

with conventional Si CMOS circuits suggesting the possibility

of realizing single-chip compact GaN power integrated circuits

(ICs) [10].

For power applications, the enhancement-mode (E-mode) or

normally-off transistors are highly desirable owing to the fail-

safe capability, which imposes one of the biggest impediment

on AlGaN/GaN power hybrid MOS-HFET since the postepitaxy

process is required to turn the native normally-on 2DEG chan-

nel into normally-off. Up to date, several approaches have been

demonstrated to obtain E-mode AlGaN/GaN transistors such as

a gate recess technique [11]–[15], F

–

ion implantation [16], [17]

and p-(Al)GaN gate [18]–[20]. Nevertheless, the typical thresh-

old voltage (V

) of the E-mode GaN devices is still less than

4.5 V [12]–[20]. In some power switching applications (e.g., hy-

brid vehicles, power grid, rail transit, etc.), transistors with high

of 4–6 V [21] or even higher and simultaneously delivers

large gate swing are preferred to prevent the devices from unin-

tentional turn-on or forward gate breakdown, which stems from

the parasitic induced high di/dt or dv/dt under high switching

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