3
650VCoolMOS™CEPowerTransistor
IPA65R400CE
Rev.2.1,2017-04-19Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
15.1
9.5
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 30 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 215 mJ I
D
=1.8A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.32 mJ I
D
=1.8A; V
DD
=50V; see table 10
Avalanche current, repetitive I
AR
- - 1.8 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
DS
=0...480V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-252, TO-251
P
tot
- - 118 W T
C
=25°C
Power dissipation (FullPAK)
TO-220FP
P
tot
- - 31 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Continuous diode forward current I
S
- - 10.6 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 30 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 15 V/ns
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 8
Maximum diode commutation speed di
f
/dt - - 500 A/µs
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 8
Mounting torque (FullPAK)
TO-220FP
- - - 50 Ncm M2.5 screws
Insulation withstand voltage for
TO-220FP
V
ISO
- - 2500 V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j max
. TO251 equivalent, Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
IdenticallowsideandhighsideswitchwithidenticalR
G