汽车级DDR3 SDRAM - MT41J系列特性详解

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"MT41J128M16HA-15E是车载DDR3 SDRAM内存芯片，适用于工业和汽车级应用。" MT41J128M16HA-15E是一款高性能的车载 DDR3 SDRAM（Double Data Rate Third Generation Synchronous Dynamic Random-Access Memory）内存芯片，设计符合工业和汽车行业的严苛温度标准。这款内存芯片具有以下关键特性： 1. **温度适应性**：该芯片可工作在广泛的温度范围内，包括低温 -40°C 至高温 +95°C 或 +105°C，满足车载环境对温度耐受性的高要求。 2. **电压规范**：它采用1.5V的工作电压（VDD 和 VDDQ），允许的电压偏差为±0.075V，确保了稳定且节能的运行。 3. **1.5V中心终止的推挽式I/O**：这种接口设计有助于减小信号反射，提高数据传输的准确性和稳定性。 4. **差分双向数据 strobe**：使用差分信号技术，增强了数据传输的速度和抗干扰能力。 5. **8n位预取架构**：通过8倍预取机制，可以提高数据读写速度，提升系统性能。 6. **差分时钟输入**：提供CK和CK#两个差分时钟信号，以确保精确的时序控制。 7. **8个内部银行**：内存被划分为8个内部银行，便于并行处理多个请求，提高存取效率。 8. **开漏检测（ODT）**：对数据、 strobe 和 mask 信号提供可编程的开漏检测，增强信号完整性。 9. **可编程CAS读延迟（CL）**、**附加延迟（AL）**和**写延迟（CWL）**：根据时钟周期（tCK）灵活调整，以优化系统性能。 10. **固定突发长度（BL）**：支持8位突发和4位突发切片（BC），可以通过模式寄存器集（MRS）进行配置。 11. **选择性BC4或BL8**：在运行过程中可以动态切换突发长度，提高系统灵活性。 12. **自刷新模式**：芯片能自动执行自刷新操作，保证长时间无操作状态下的数据保留。 13. **自刷新温度（SRT）**：根据工作环境温度自动调整自刷新周期，确保数据安全。 14. **写级联**：确保写操作的精确同步。 15. **多功能寄存器**：用于设置和控制各种芯片功能。 16. **输出驱动校准**：优化输出信号的质量和幅度。 17. **AEC-Q100认证**：满足汽车电子委员会的可靠性标准。 18. **PPAP提交**：符合汽车行业生产件批准程序，确保质量管控。 19. **8D响应时间**：表示数据读取或写入的高速特性。此外，该芯片还提供了不同的封装选项，如78-ball FBGA（无铅）9mmx11.5mm Rev.D HX封装针对8位总线宽度，96-ball FBGA封装针对16位总线宽度，适应不同系统设计的需求。这些封装都是无铅的，符合环保要求。

Ball Assignments and Descriptions

Figure 5: 78-Ball FBGA – x4, x8 (Top View)

1 2 3 4 6 7 8 95

DDQ

SSQ

REFDQ

ODT

SSQ

DQ2

NF, DQ6

DDQ

CS#

BA0

RESET#

DQ0

DQS

DQS#

NF, DQ4

RAS#

CAS#

WE#

BA2

A13

NF, NF/TDQS#

DM, DM/TDQS

DQ1

NF, DQ7

CK#

A10/AP

A12/BC#

A11

A14

DDQ

SSQ

DDQ

CKE

SSQ

DQ3

NF, DQ5

REFCA

BA1

Notes:

1. Ball descriptions listed in Table 3 (page 18) are listed as “x4, x8” if unique; otherwise,

x4 and x8 are the same.

2. A comma separates the configuration; a slash defines a selectable function.

Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies

to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-

fined in Table 3).

2Gb: x8, x16 Automotive DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef84799800

2gb_ddr3_ait_aat_sdram.pdf – Rev. A 8/11 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions

Symbol Type Description

A[14:13], A12/BC#,

A11, A10/AP, A[9:0]

Input Address inputs: Provide the row address for ACTIVATE commands, and the column

address and auto precharge bit (A10) for READ/WRITE commands, to select one

location out of the memory array in the respective bank. A10 sampled during a

PRECHARGE command determines whether the PRECHARGE applies to one bank

(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also

provide the op-code during a LOAD MODE command. Address inputs are referenced

to V

REFCA

. A12/BC#: When enabled in the mode register (MR), A12 is sampled during

READ and WRITE commands to determine whether burst chop (on-the-fly) will be

performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 66 (page 105).

BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,

WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode

BA[2:0] are referenced to V

REFCA

CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals

are sampled on the crossing of the positive edge of CK and the negative edge of

CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.

CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal

circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-

pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE

LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks

idle), or active power-down (row active in any bank). CKE is synchronous for power-

down entry and exit and for self refresh entry. CKE is asynchronous for self refresh

exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during

POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF

REFRESH. CKE is referenced to V

REFCA

CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the

command decoder. All commands are masked when CS# is registered HIGH. CS#

provides for external rank selection on systems with multiple ranks. CS# is considered

part of the command code. CS# is referenced to V

REFCA

DM Input Input data mask: DM is an input mask signal for write data. Input data is masked

when DM is sampled HIGH along with the input data during a write access.

Although the DM ball is input-only, the DM loading is designed to match that of the

DQ and DQS balls. DM is referenced to V

REFDQ

. DM has an optional use as TDQS on

the x8.

ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)

termination resistance internal to the DDR3 SDRAM. When enabled in normal

operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,

and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is

ignored if disabled via the LOAD MODE command. ODT is referenced to V

REFCA

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command

being entered and are referenced to V

REFCA

RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V

. The RESET# input re-

ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V

and

DC LOW ≤ 0.2 × V

DDQ

. RESET# assertion and de-assertion are asynchronous.

2Gb: x8, x16 Automotive DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef84799800

2gb_ddr3_ait_aat_sdram.pdf – Rev. A 8/11 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 4: 96-Ball FBGA – x16 Ball Descriptions

Symbol Type Description

A13, A12/BC#, A11,

A10/AP, A[9:0]

Input Address inputs: Provide the row address for ACTIVATE commands, and the column

address and auto precharge bit (A10) for READ/WRITE commands, to select one

location out of the memory array in the respective bank. A10 sampled during a

PRECHARGE command determines whether the PRECHARGE applies to one bank (A10

LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also pro-

vide the op-code during a LOAD MODE command. Address inputs are referenced to

REFCA

. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ

and WRITE commands to determine whether burst chop (on-the-fly) will be performed

(HIGH = BL8 or no burst chop, LOW = BC4). See Table 66 (page 105).

BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE,

or PRECHARGE command is being applied. BA[2:0] define which mode

are referenced to V

REFCA

CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals

are sampled on the crossing of the positive edge of CK and the negative edge of CK#.

Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.

CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal

circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-

pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW

provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or

active power-down (row active in any bank). CKE is synchronous for

power-down entry and exit and for self refresh entry. CKE is asynchronous for self re-

fresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during

POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF RE-

FRESH. CKE is referenced to V

REFCA

CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the com-

mand decoder. All commands are masked when CS# is registered HIGH. CS#

provides for external rank selection on systems with multiple ranks. CS# is considered

part of the command code. CS# is referenced to V

REFCA

LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte

input data is masked when LDM is sampled HIGH along with the input data during a

write access. Although the LDM ball is input-only, the LDM loading is designed to

match that of the DQ and DQS balls. LDM is referenced to V

REFDQ

ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)

termination resistance internal to the DDR3 SDRAM. When enabled in normal

operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#,

UDQS, UDQS#, LDM, and UDM. The ODT input is ignored if disabled via the LOAD

MODE command. ODT is referenced to V

REFCA

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command

being entered and are referenced to V

REFCA

RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V

. The RESET# input re-

ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V

and DC

LOW ≤ 0.2 × V

DDQ

. RESET# assertion and de-assertion are asynchronous.

2Gb: x8, x16 Automotive DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef84799800

2gb_ddr3_ait_aat_sdram.pdf – Rev. A 8/11 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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