4
LM139-MIL
SLCS160 –JUNE 2017
www.ti.com
Product Folder Links: LM139-MIL
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground.
(3) Differential voltages are at xIN+ with respect to xIN–.
(4) Input current flows through parasitic diode to ground and will turn on parasitic transistors that will increase I
CC
and may cause output to
be incorrect. Normal operation resumes when input is removed.
(5) Short circuits from outputs to V
CC
can cause excessive heating and eventual destruction.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
V
CC
Supply voltage
(2)
36 V
V
ID
Differential input voltage
(3)
±36 V
V
I
Input voltage range (either input) –0.3 36 V
I
K
Input current
(4)
–50 mA
V
O
Output voltage 36 V
I
O
Output current 20 mA
Duration of output short circuit to ground
(5)
Unlimited
T
J
Operating virtual-junction temperature 150 °C
Case temperature for 60 s FK package 260 °C
Lead temperature 1.6 mm (1/16 in) from case for 60 s J package 300 °C
T
stg
Storage temperature –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±750
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Supply voltage 2 30 V
T
J
Junction temperature –55 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
LM139-MIL
UNIT
D (SOIC) J (CDIP) W (CFP) FK (LCCC)
R
θJA
Junction-to-ambient thermal resistance 98.8 89.5 156.2 82.5 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 64.3 46.1 86.7 60.7 °C/W
R
θJB
Junction-to-board thermal resistance 59.7 78.7 154.6 59.4 °C/W
ψ
JT
Junction-to-top characterization parameter 25.7 3 56.5 53 °C/W
ψ
JB
Junction-to-board characterization parameter 59.3 71.8 133.5 58.4 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance — 24.2 14.3 9.7 °C/W
剩余19页未读，继续阅读
不觉明了
- 粉丝: 3271
- 资源: 5614
我的内容管理
收起
- 我的资源
快来上传第一个资源
我的收益 登录查看自己的收益
我的积分
登录查看自己的积分
我的C币
登录后查看C币余额
我的收藏 
我的下载 
下载帮助
会员权益专享
最新资源
- VMP技术解析：Handle块优化与壳模板初始化
- C++ Primer 第四版更新：现代编程风格与标准库
- 计算机系统基础实验：缓冲区溢出攻击(Lab3)
- 中国结算网上业务平台：证券登记操作详解与常见问题
- FPGA驱动的五子棋博弈系统：加速与创新娱乐体验
- 多旋翼飞行器定点位置控制器设计实验
- 基于流量预测与潮汐效应的动态载频优化策略
- SQL练习：查询分析与高级操作
- 海底数据中心散热优化：从MATLAB到动态模拟
- 移动应用作业：MyDiaryBook - Google Material Design 日记APP
- Linux提权技术详解：从内核漏洞到Sudo配置错误
- 93分钟快速入门 LaTeX：从入门到实践
- 5G测试新挑战与罗德与施瓦茨解决方案
- EAS系统性能优化与故障诊断指南
- Java并发编程：JUC核心概念解析与应用
- 数据结构实验报告：基于不同存储结构的线性表和树实现
资源上传下载、课程学习等过程中有任何疑问或建议，欢迎提出宝贵意见哦~我们会及时处理！
点击此处反馈
