汽车级USB2.0接口保护芯片-TPD3S716-Q1

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"TI-TPD3S716-Q1.pdf是一款专为汽车应用设计的USB2.0接口保护器件，提供可调电流限制、电池短路保护和多种短路保护功能，符合AEC-Q100标准，适用于各种车载电子设备。" **TI-TPD3S716-Q1特性** 1. **符合AEC-Q100标准（1级）**：设计满足汽车电子行业的严格标准，工作温度范围覆盖-40°C至+125°C，确保在恶劣环境下的稳定运行。 2. **功能安全支持**：提供帮助进行功能安全系统设计的相关文档，以满足汽车电子系统对安全性的重要要求。 3. **电池短路保护**：VBUS_CON引脚和VD+、VD–引脚均具有高达18V的电池短路保护，同时具备接地短路保护功能，保护内部电路免受过压损害。 4. **ESD保护**：通过IEC61000-4-2标准，提供±8kV接触放电和±15kV气隙放电保护，增强器件的抗静电能力。 5. **高速数据开关**：3dB带宽达到1GHz，保证高速USB2.0数据传输的完整性，适用于如CarPlay等高速应用。 6. **可调节断续电流限制**：最大可设置为2.4A，灵活控制电流限制以适应不同应用场景。 7. **短暂过压响应时间**：VBUS开关和数据开关的过压响应时间分别为2μs和200ns，快速保护上游电路。 8. **独立VBUS和数据使能引脚**：支持配置为主机或客户端/OTG模式，增加设计灵活性。 9. **故障输出信号**：当检测到异常情况时，提供故障输出信号，便于系统监控和故障排查。 10. **热关断特性**：内置热保护机制，避免过热造成器件损坏。 11. **封装形式**：16引脚SSOP封装，尺寸为4.9mmx3.9mm，直通布线设计，适合紧凑空间的汽车电子系统。 **应用领域** 1. **终端设备**：如音响主机、后座娱乐系统、远程信息处理、USB集线器、导航模块和媒体接口等。 2. **接口**：主要用于USB2.0接口的保护，确保数据传输的安全性和稳定性。 **总结** TI-TPD3S716-Q1是汽车级的USB接口保护解决方案，其集成的高速数据开关和全面的保护功能，确保了在车载环境下USB连接器的可靠性和数据传输的效率。这款器件特别适用于需要高速数据传输和严格安全标准的汽车电子系统。

6.7 Electrical Characteristics (continued)

over operating free-air temperature range, VEN = 0 V, DEN = 0 V, V

BUS_SYS

= 5 V, V

= 3.3 V, VD+/VD–/D+/D–/V

BUS_CON

= float (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VD(ON_LEAK)

Leakage into data path while shorted to

battery and powered on

Measured flowing in to VD+ or VD– pins, V

BUS_SYS

= 5 V, VD+ or VD– = 18 V, V

= 3.3 V D+/D– = 0

85 µA

UVLO(RISING)

Undervoltage lockout

rising for V

Ramp V

up until V

BUS

and Data FETs turn on,

VEN =0 V, DEN = 0 V

2.6 2.7 2.9

UVLO(FALLING)

Undervoltage lockout

falling for V

Ramp V

down until V

BUS

and Data FETs turn off,

VEN =0 V, DEN = 0 V

2.5 2.6 2.8

VEN, DEN, FLT PINS

High-level input voltage VEN, DEN

Set VEN ( DEN)= 0 V; Sweep VEN ( DEN) to 1.4 V;

Measure when V

BUS

(Data) FET turns off

1.2 V

Low-level input voltage VEN, DEN

Set VEN ( DEN) = 3.3 V; Sweep VEN ( DEN) from

3.3 V to 0.5 V; Measure when V

BUS

(Data) FET

turns on

0.8 V

Input Leakage Current VEN, DEN

( VEN)

( DEN)

)= 3.3 V ; Measure Current into VEN

( DEN) pin

1 µA

Low-level output voltage FLT I

= 3 mA 0.4 V

OCP CIRCUIT—V

BUS

LIM

Overcurrent limit, R

ADJ

280 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

505 620 mA

LIM

Overcurrent limit, R

ADJ

158 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

0.905 1.1 A

LIM

Overcurrent limit, R

ADJ

143 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

1.005 1.2 A

LIM

Overcurrent limit, R

ADJ

93.1 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

1.505 1.8 A

LIM

Overcurrent limit, R

ADJ

76.8 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

1.8 2.16 A

LIM

Overcurrent limit, R

ADJ

66.5 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

2.105 2.57 A

LIM

Overcurrent limit, R

ADJ

57.6 k

Ω ± 1%

BUS

Progressively load V

BUS_CON

until device asserts

FLT

2.405 2.93 A

LIM

Overcurrent limit, I

ADJ

GND

BUS

Progressively load V

BUS_CON

until device asserts

FLT

550 700 850 mA

LIM

Overcurrent limit, I

ADJ

BUS_SYS

BUS

Progressively load V

BUS_CON

until device asserts

FLT

1.1 1.4 1.7 A

OVER TEMPERATURE PROTECTION

SD(RISING)

The rising over-temperature protection

shutdown threshold

BUS_SYS

= 5 V, VEN = 0 V, DEN = 0 V, No Load on

BUS_CON

, T

stepped up until FLT is asserted

150 165 180

℃

SD(FALLING)

The falling over-temperature protection

shutdown threshold

BUS_SYS

= 5 V, VEN = 0 V, DEN = 0 V, No Load on

BUS_CON

, T

stepped down from T

SD(RISING)

until

FLT is deasserted

125 130 142

℃

SD(HYST)

The over-temperature protection

shutdown threshold hysteresis

SD(RISING)

– T

SD(FALLING)

10 35 55

℃

OVP CIRCUIT—V

BUS

OVP(RISING)

Input overvoltage

protection threshold

BUS_CON

Increase V

BUS_CON

from 5 V to 7 V. Measure when

FLT is asserted

5.6 5.8 6 V

HYS(OVP)

Hysteresis on OVP V

BUS_CON

Difference between rising and falling OVP

thresholds on V

BUS_CON

50 mV

OVP(FALLING)

Input overvoltage

protection threshold

BUS_CON

Decrease V

BUS_CON

from 7 V to 5 V. Measure when

FLT is deasserted

5.52 5.75 5.98 V

REV_SUPPLY(RISING)

Reverse supply

detection threshold

BUS_CON

–

BUS_SYS

Set V

BUS_SYS

to 5 V. Increase V

BUS_CON

from

BUS_SYS

to V

BUS_SYS

+ 300 mV. Measure the value

of V

BUS_CON

– V

BUS_SYS

when FLT asserts.

25°C ≤ T

≤ 125°C

140 200 260 mV

TPD3S716-Q1

ZHCSAL0D – MARCH 2016 – REVISED AUGUST 2020

www.ti.com.cn

6 Submit Document Feedback

Product Folder Links: TPD3S716-Q1

6.7 Electrical Characteristics (continued)

over operating free-air temperature range, VEN = 0 V, DEN = 0 V, V

BUS_SYS

= 5 V, V

= 3.3 V, VD+/VD–/D+/D–/V

BUS_CON

= float (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

REV_SUPPLY(FALLING)

Reverse supply

detection threshold

BUS_CON

–

BUS_SYS

Set V

BUS_SYS

to 5 V. Decrease V

BUS_CON

from

BUS_SYS

+ 300 mV to V

BUS_SYS

. Measure the value

of V

BUS_CON

– V

BUS_SYS

when FLT deasserts.

25°C ≤ T

≤ 125°C

70 120 165 mV

REV_SUPPLY(HYST)

Hysteresis on reverse

supply detection

BUS_CON

–

BUS_SYS

Difference between rising and falling reverse supply

detection thresholds

80 mV

UVLO(SYS_RISING)

Undervoltage lockout

rising for V

BUS_SYS

voltage rising from 0 V to 5 V 3.1 3.3 3.6 V

HYS(UVLO_SYS)

BUS_SYS

UVLO

Hysteresis

BUS_SYS

Difference between rising and falling UVLO

thresholds on V

BUS_SYS

50 75 100 mV

UVLO(SYS_FALLING)

Undervoltage lockout

falling for V

BUS_SYS

voltage falling from 5 V to 2.9 V 3 3.2 3.5 V

SHRT(RISING)

Short-to-ground

comparator rising

threshold

BUS_CON

Increase V

BUS_CON

voltage from 0 V until the device

transitions from the short-circuit to over-current

mode of operation

2.5 2.6 2.7 V

SHRT(FALLING)

Short-to-ground

comparator falling

threshold

BUS_CON

Set V

BUS_SYS

= 5 V; V

= 3.3 V; VEN = 0 V, DEN =

0 V; Decrease V

BUS_CON

voltage from 5 V until the

device transitions from the over-current to short-

circuit mode of operation

2.4 2.5 2.6 V

SHRT(HYST)

Short-to-ground

comparator hysteresis

BUS_CON

Difference between V

SHRT(RISING)

and

SHRT(FALLING)

125 mV

SHRT

Short-to-ground current

source

BUS_CON

Current sourced from V

BUS_SYS

when device is in

short-circuit mode

150 350 mA

OVP CIRCUIT—VD+/VD–

OVP(RISING)

Input overvoltage

protection threshold

VD+/VD–

Increase VD+ or VD– (with D+ and D–) from 3.3

V to 4.5 V. Measure the value at which FLT is

asserted

+ 0.6 V

+ 0.8 V

+ 1 V

HYS(OVP)

Hysteresis on OVP

VD+/VD–

Difference between rising and falling OVP

thresholds on VD+/VD

–

50 mV

OVP(FALLING)

Input overvoltage

protection threshold

VD+/VD–

Decrease VD+ or VD– (with D+ or D–) from 4.5 V

to 2 V. Measure the value at FLT is deasserted

0.525

0.75

0.975

SHORT TO BATTERY

(VBUS_STB)

BUS

hotplug short-to-

battery tolerance

BUS_CON

Charge battery-equivalent capacitor to test voltage

then discharge to pin under test through a 1 meter,

18 gauge wire. (See 图 7-1 for more details)

18 V

(DATA_STB)

Data line hotplug short-

to-battery tolerance

VD+/VD–

18 V

DATA LINE SWITCHES—VD+ to D+ or VD– to D–

Equivalent On Capacitance

Capacitance of D+/D– switches when enabled –

measure on connector side at VDx = 0.4 V

6.9 pF

On Resistance

Measure resistance between D+ and VD+ or D–

and VD–, voltage between 0 V and 0.4 V

4 6.5

ON(Flat)

On Resistance flatness

Measure resistance between D+ and VD+ or D–

and VD–, sweep voltage between 0 V and 0.4 V

0.2 1

On Bandwidth (–3dB)

Measure S

bandwidth from D+ to VD+ or D– to

VD– with voltage swing = 400 mVpp, V

= 0.2 V

910 MHz

ON_DIFF

On Bandwidth (–3dB)

Measure S

DD21

bandwidth from D+ to VD+ and D–

to VD– with voltage swing = 800 mVpp differential,

= 0.2 V

1050 MHz

talk

Crosstalk

Measure S

bandwidth from D+ to VD– or D– to

VD+ with voltage swing = 400 mVpp. Make sure to

terminate open sides to 50 ohms. f = 480 MHz

–28

nFET SWITCH—V

BUS

(DISCHARGE)

Output discharge resistance

VEN = 5 V, DEN = 5 V, Set V

BUS_CON

= 5 V and

measure current flow to ground

18 30

kΩ

www.ti.com.cn

TPD3S716-Q1

ZHCSAL0D – MARCH 2016 – REVISED AUGUST 2020

Submit Document Feedback

Product Folder Links: TPD3S716-Q1

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