低功耗AT93C66B/66B EEPROM数据手册：2K/4K容量与3线串口设计

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Atmel公司的AT93C56B/66B是一款高性能的串行可电擦除只读存储器（EEPROM）芯片，专为工业和商业应用设计，尤其注重低功耗和低电压操作。这款器件提供了两种用户可选的内部组织模式：当ORG引脚连接到电源电压（VCC）时，它能实现2K或4K的存储容量，分别是256x8位和128x16位的连续读取区域；当ORG引脚接地时，容量调整为512x8位或256x16位的8位字节区。其主要特点包括： 1. 电压兼容性：AT93C56B/66B可在1.7V至5.5V的宽电压范围内运行，适应不同应用场景的需求。 2. 灵活接口：采用三线串行接口，包括数据输入(DI)，数据输出(DO)，以及控制芯片选择(CS)，简化了外部接口设计。 3. 高效操作：支持2MHz时钟频率，在标准5V供电下，允许快速的256字节（128x16位）或512字节（256x8位）的顺序读取，自定时写入周期最长可达5毫秒。 4. 高可靠性：具有极高的耐用性，能够承受高达一百万次的写入循环，保证数据长期存储。此外，即使在断电后，数据也能保持至少100年。 5. 多种封装选项：为了满足不同的尺寸和性能需求，AT93C56B/66B提供多种封装形式，包括8-lead JEDEC SOIC、8-lead TSSOP、8-lead UDFN、8-lead XDFN 和8-ball VFBGA，方便集成到各种电路板设计中。这款存储器在工业自动化、仪器仪表、通信设备和消费电子产品等领域有着广泛应用，它的低功耗特性和灵活配置使其成为现代电子系统设计中的理想选择。通过理解并利用这些特性，工程师可以优化他们的系统架构，确保在有限的资源下实现高效且可靠的存储解决方案。

8735A–SEEPR–1/11

Atmel AT93C56B/66B

Table 1-4. Instruction Set for the Atmel AT93C56B and Atmel AT93C66B

Note: The Xs in the address field represent “don’t care” values, and must be clocked

2. Functional Description

The Atmel

AT93C56B/66B is accessed via a simple and versatile three-wire serial communication interface. Device

operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of

CS, and consists of a start bit (logic one) followed by the appropriate op code and the desired memory address location.

READ (READ): The read (READ) instruction contains the address code for the memory location to be read. After the

instruction and address are decoded, data from the selected memory location is available at the serial output pin, DO.

Output data changes are synchronized with the rising edges ofthe serial clock, SK. It should be noted that a dummy bit

(logic zero) precedes the 8- or 16-bit data output string. The AT93C56B/66B supports sequential read operations. The

device will automatically increment the internal address pointer and clock out the next memory location as long as chip

select (CS) is held high. In this case, the dummy bit (logic zero) will not be clocked out between memory locations, thus

allowing for a continuous stream of data to be read.

ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes into the erase/write disable

(EWDS) state when power is first applied. An erase/write enable (EWEN) instruction must be executed first before any

programming instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until

an EWDS instruction is executed or V

power is removed from the part.

ERASE (ERASE): The erase (ERASE) instruction programs all bits in the specified memory location to the logical-one

state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the

ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t

). A logic one at pin DO

indicates that the selected memory location has been erased and the part is ready for another instruction.

WRITE (WRITE): The Write (WRITE) instruction contains the 8- or 16-bits of data to be written into the specified memory

location. The self-timed programming cycle, t

, starts after the last bit of data is received at serial data input pin DI. The DO

pin outputs the ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t

). A

logic zero at DO indicates that programming is still in progress. A logic one indicates that the memory location at the

specified address has been written with the data pattern contained in the instruction and the part is ready for further

instructions. A ready/busy status cannot be obtained if CS is brought high after the end of the self-timed programming

cycle, t

ERASE ALL (ERAL): The erase all (ERAL) instruction programs every bit in the memory array to the logic one state, and

is primarily used for testing purposes. The DO pin outputs the ready/busy status of the part if CS is brought high after being

kept low for a minimum of 250ns (t

). The ERAL instruction is valid only at V

= 5.0V 10%.

Instruction SB

Code

Address Data

Commentsx 8 x 16 x 8 x 16

READ 1 10 A

– A

Reads data stored in memory at specified address

EWEN 1 00 11XXXXXXX 11XXXXXX Write enable must precede all programming modes

ERASE 1 11 A

– A

Erases memory location A

– A

WRITE 1 01 A

– A

– D

Writes memory location A

– A

ERAL 1 00 10XXXXXXX 10XXXXXX

Erases all memory locations. Valid only at

= 4.5V to 5.5V

WRAL 1 00 01XXXXXXX 01XXXXXX D

– D

Writes all memory locations. Valid only at

= 5.0V ±10% and disable register cleared

EWDS 1 00 00XXXXXXX 00XXXXXX Disables all programming instructions

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低功耗AT93C66B/66B EEPROM数据手册：2K/4K容量与3线串口设计

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