Ultracompact dual-mode waveguide crossing
based on subwavelength multimode-interference
couplers
WEIJIE CHANG,
1,2
LULUZI LU,
1,2
XINSHU REN,
1,2
DONGYU LI,
1,2
ZEPENG PAN,
1,2
MENGFAN CHENG,
1,2
DEMING LIU,
1,2
AND MINMING ZHANG
1,2,
*
1
School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan 430074, China
2
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
*Corresponding author: mmz@hust.edu.cn
Received 8 February 2018; revised 11 April 2018; accepted 27 April 2018; posted 27 April 2018 (Doc. ID 322783); published 5 June 2018
We propose and experimentally demonstrate a novel ultracompact dual-mode waveguide crossing based on sub-
wavelength multimode-interference couplers for a densely integrated on-chip mode-division multiplexing system.
By engineering the lateral-cladding material index and manipulating phase profiles of light at the nanoscale using
an improved inverse design method, a subwavelength structure could theoretically realize the identical beat length
for both TE
0
and TE
1
, which can reduce the scale of the device greatly. The fabricated device occupied a footprint
of only 4.8 μm × 4.8 μm. The measured insertion losses and crosstalks were less than 0.6 dB and −24 dB from
1530 nm to 1590 nm for both TE
0
and TE
1
modes, respectively. Furthermore, our scheme could also be expanded
to design waveguide crossings that support more modes.
© 2018 Chinese Laser Press
OCIS codes: (130.3120) Integrated optics devices; (060.4230) Multiplexing; (160.3918) Metamaterials.
https://doi.org/10.1364/PRJ.6.000660
1. INTRODUCTION
Recently, mode-division multiplexing (MDM) on a silicon-on-
insulator (SOI) platform, as a more promising and attractive
technology, provides an effective approach to further increase
the transmission spectral efficiency and capacity of an on-chip
optical interconnect [1]. To realize an MDM system, various
key building blocks have been extensively reported, e.g., mode
(de)multiplexers [(DE)MUX] [2–6], mode switches [7,8],
and multimode bent waveguides [9,10]. A high-performance
multimode waveguide crossing with compact footprint, low
insertion loss (IL), and low crosstalk (CT), which is an essential
component for realizing a densely integrated MDM optical net-
work, has been rarely addressed considering the complex mode
coupling in the crossing region for high order modes. Recently,
the self-image effect of conventional multimode-interference
(MMI) couplers has been utilized to realize the dual-mode
waveguide crossing [11]. Unfortunately, the severe self-image
position offset between the fundamental transverse magnetic
modes (TM
0
) and first-order transverse magnetic modes
(TM
1
) in a conventional waveguide leads to a relatively large
coupling length and complicated design process. Therefore,
one may use a symmetric Y-junction to convert high order
modes to the fundamental modes to relax the subsequent
processing [12]. However, the additional symmetric Y-junction
might inevitably increase the insertion loss and scale of the
device. A multimo de waveguide crossing with a compact foot-
print and excellent performance is still highly desired for a
densely integrated MDM optical network.
Due to the capability of flexible refractive index engineering
at the subwavelength (SW) scale, subwavelength gratings
(SWGs) have been utilized to realize waveguide crossings,
broadband directional couplers, and fiber-to-chip couplers
[13–16]. On the other hand, free-form silicon SW structures
based on inverse design methods also provide an alternative ap-
proach to engineer the refraction index at the nanoscale and
have shown great potential to realize ultracompact and highly
functional devices simultaneously [ 17–19]. However, the ran-
dom and complex etching patterns in these structures may
inevitably introduce large fabrication errors. To resolv e this
issue, we earlier proposed a fabrication-error-insensitive
subwavelength structure, i.e., the PhC-like SW structure, to
suppress fabrication errors caused by the lag effect of the
plasma etching process [20]. Moreover, inverse designs of SW-
structure devices are usually nonsmooth optimization prob-
lems. Different initial patterns probably lead to different
local-optimum patterns using the same iteration algorithm.
One has to use many random initial patterns to generate many
“optimized” patterns and then select a relatively “best” one as
660
Vol. 6, No. 7 / July 2018 / Photonics Research
Research Article
2327-9125/18/070660-06 Journal © 2018 Chinese Laser Press