OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS Vol.11, No12., 2017, p. 716-720
The spin orbital dynamics properties of vacancy diamond
films using enhanced Raman scattering spectroscopy
RenR†,YijingRen,XuanLi
Departmentofoptics,Xi’anJiaoTongUniversity,Xian710049,710054,China
MinistryofEducationKeyLabNonequilibrium,XiAnJiaoTong Univ,DeptOpt,Xian710049,710054,Shaanxi,PeoplesRChina.
We investigated the Raman scattering spectrums of difference residual stress and thickness of diamond/Si films. The
spin-orbital dynamics is caused by disordered lattice coupling and electron-phonons in diamond/Si. The diamond films
were prepared on a Si substrate by MPCVD with methyl-hydrogen gas mixture. The Raman scattering spectrum of
diamond/Si(100) hetero-junction was found as a function of crystal size, orientation, and film thickness. A sharp peak at
1360cm(-1) is of D graphite sp(2), while the broad peak 1550 cm(-1) of a broad band mode G, which corresponds to
disordered sp(2) hybridization. The transfer of diamond sp(2) content extracted from C=C peak and converted to the
sp(3) spin related effect. The diamond/Si(100) densitystate shows spin-related couple of sp(3), p and d orbital
hybridization.
Keywords: Diamond films, Nitrogen vacancy, Spin-orbit dynamics, Raman shift
PACS: 63.20.K, 73.40.-c, 73.63.Rt,52.25.Vy
Author to whom correspondence should be addressed mail:ren@mail.xjtu.edu.cn
1. Introduction
One foundational issue in the physics of controlled
fabrication of diamond semiconductor nanostructure is the role
of high performance photonic and optoelectronic. doped
diamond/Si heterojunction are the most promising materials of
the spin-related couple as well as self-ordering topographic
patterns that span multiple length scales in studying the
complex phase dynamics.
[1]
Raman scattering is known to be a
powerful technique to research the dynamics caused by
electron-phonons. The doped diamond/Si heterojunction
displays charge carriers at the hydrogen-terminated surface of
diamond and competition coupling of spins, charge, and lattice
order. The heterojunction diamond/Si that induced a metallic
state with a high mobility in diamond and spin-related
anomalous electrons transport behavior can be obtained in
diamond/Si.
[15]
Awschalom demonstrates fully
three-dimensional and patterned localization of
nitrogen-vacancy (NV) centers in diamond with coherence
times and characterizes the effects of electron energy and dose
on NV formation.
[13]
Although Raman spectra of other diamond
have been reported, there are no information on the lattice
diamond in heterojunction films as well as to analyze more
specific aspects of phonon-electron interaction and isotopic
effects. The low dimensional nano heterojunction of
diamond/Si changes the orbital and spin dynamics.
H-diamond is a most popular semiconductor material with a
wide band gap (5.45 ev), electric breakdown field
10000(KV/cm), electric mobility 4500(cm
2
/V.s), hole mobility
3800(cm
2
/V.s) and thermal conductivity 22 (W/K.cm), which
charge and orbital ordered phase caused by electron-phonons
dynamics.
[7,8,9,10]
Si (N type) is a most popular semiconductor material with a
wide band gap (3.37 ev) and large exciton binding energy (60
mev) which potentially possesses the characteristics of high
efficiency, lower power, light emitting and laser diodes. The
heterojunction diamond/Si nanostructure is good candidate for
fabrication of nanometer-sized optoelectronic devices. It is
expected that structural changes and spin-related coupling will
influence the electron-phonon spectra. The doped diamond/Si
heterojunction junctions with carrier transfer exhibit photonic
and optoelectronic effect.
[1]
In this letters, we reported Raman scattering studies of
diamond/Si heterojunction with different nano-thickness
structure to investigate spin- dynamics. We prepared crystal
diamond/Si(100) to introduce charge transport and carrier
injection. A temperature dependence of positive
magnetoresistance was observed in this junction that has some
special properties of diamond semiconductor,
[8, 9]
resistive
switching,
[10]
[11, 12]
[13]
tunnel junctions,
[14]
[15]
ultraviolet