帮我用verilog写一个SRAM的BIST控制器,要求采用主从FSM,流程如下:所有存储单元写5,然后从低地址到高地址读5,然后依次写A,然后依次读A。如果成功,就读A、写5、读5,然后进入第二个部分;如果失败,就回到读5。第二个部分与第一个部分类似,但把数据5换成了0,把A换成了F
时间: 2023-12-23 15:03:17 浏览: 25
好的,我会根据您的要求来编写verilog代码。下面是BIST控制器的代码:
```
module SRAM_BIST_Controller(
input clk, // 时钟信号
input rst, // 复位信号
input [31:0] A, // 地址信号
output reg [31:0] D, // 数据信号
output reg [31:0] addr, // 存储器地址信号
output reg [1:0] state // 状态信号
);
// 状态定义
parameter IDLE = 2'b00; // 空闲状态
parameter WRITE_5 = 2'b01; // 写5状态
parameter READ_5 = 2'b10; // 读5状态
parameter WRITE_A = 2'b11; // 写A状态
parameter READ_A = 2'b01; // 读A状态
parameter WRITE_0 = 2'b10; // 写0状态
parameter READ_F = 2'b11; // 读F状态
// 存储器深度
parameter DEPTH = 256;
// 计数器
reg [7:0] cnt;
// 存储器
reg [31:0] mem [0:DEPTH-1];
// 从地址
reg [31:0] addr_r;
// 主状态机
reg [1:0] mstate, mstate_n;
// 从状态机
reg [1:0] sstate, sstate_n;
// 同步信号
wire sync;
// 同步计数器
reg [7:0] sync_cnt;
// 状态转移
always @ (posedge clk) begin
if (rst) begin
mstate <= IDLE;
sstate <= IDLE;
cnt <= 0;
addr_r <= 0;
D <= 0;
addr <= 0;
state <= IDLE;
end else begin
mstate <= mstate_n;
sstate <= sstate_n;
if (sync) begin
cnt <= cnt + 1;
sync_cnt <= sync_cnt + 1;
end
end
end
// 主状态机逻辑
always @ (*) begin
case (mstate)
IDLE: begin
mstate_n = WRITE_5;
addr <= 0;
state <= IDLE;
end
WRITE_5: begin
mstate_n = READ_5;
D <= 5;
addr <= cnt;
state <= WRITE_5;
end
READ_5: begin
mstate_n = WRITE_A;
addr_r <= 0;
D <= 0;
addr <= cnt;
state <= READ_5;
end
WRITE_A: begin
if (cnt == DEPTH - 1) begin
mstate_n = READ_A;
end else begin
mstate_n = WRITE_A;
end
D <= A;
addr <= cnt;
state <= WRITE_A;
end
READ_A: begin
if (cnt == DEPTH - 1) begin
mstate_n = WRITE_0;
end else begin
mstate_n = READ_A;
end
addr_r <= 0;
D <= 0;
addr <= cnt;
state <= READ_A;
end
WRITE_0: begin
mstate_n = READ_F;
D <= 0;
addr <= cnt;
state <= WRITE_0;
end
READ_F: begin
mstate_n = IDLE;
addr_r <= 0;
D <= 0;
addr <= cnt;
state <= READ_F;
end
endcase
end
// 从状态机逻辑
always @ (*) begin
case (sstate)
IDLE: begin
sstate_n = IDLE;
end
WRITE_5: begin
sstate_n = READ_5;
mem[addr_r] <= D;
end
READ_5: begin
sstate_n = WRITE_A;
addr_r <= addr;
D <= mem[addr_r];
end
WRITE_A: begin
sstate_n = READ_A;
mem[addr_r] <= D;
end
READ_A: begin
sstate_n = WRITE_5;
addr_r <= addr;
D <= mem[addr_r];
if (D == A) begin
if (cnt == DEPTH - 1) begin
mstate_n = READ_A;
sstate_n = IDLE;
end
end else begin
mstate_n = READ_5;
sstate_n = IDLE;
end
end
WRITE_0: begin
sstate_n = READ_F;
mem[addr_r] <= D;
end
READ_F: begin
sstate_n = IDLE;
addr_r <= addr;
D <= mem[addr_r];
if (D == 15'hFFFF) begin
if (cnt == DEPTH - 1) begin
mstate_n = IDLE;
end
end else begin
mstate_n = READ_5;
end
end
endcase
end
// 同步信号逻辑
assign sync = (cnt == 0);
endmodule
```
以上代码中,采用了主从状态机的方式,实现了对SRAM的BIST控制。其中,主状态机控制了测试的流程,从状态机则负责对存储器进行读写操作。具体实现细节,可以参考代码注释。