read latency
时间: 2023-08-22 08:04:44 浏览: 48
回答: 从引用\[1\]中可以看出,RAM的读取延迟为两个时钟周期。当地址递增时,只要使能信号为1,RAM中就有数据可以读取。引用\[3\]中也提到了RAM的读取延迟为两个时钟周期。因此,RAM的读取延迟为两个时钟周期。
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- *1* *2* *3* [vivado 仿真ram,rom和fifo](https://blog.csdn.net/cococener/article/details/90905449)[target="_blank" data-report-click={"spm":"1018.2226.3001.9630","extra":{"utm_source":"vip_chatgpt_common_search_pc_result","utm_medium":"distribute.pc_search_result.none-task-cask-2~all~insert_cask~default-1-null.142^v91^koosearch_v1,239^v3^insert_chatgpt"}} ] [.reference_item]
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相关问题
nand flash re-read vs read retry
NAND flash memory is widely used in electronic devices such as smartphones, tablets, and solid-state drives (SSDs). During the reading process, errors can occur due to various factors such as noise and interference. To improve the reliability of data reading, NAND flash memory controllers implement two techniques: re-read and read retry.
Re-read is a technique where the memory controller reads the same data multiple times and compares the results to detect errors. If the results are inconsistent, the controller will perform another read operation until it gets a consistent result. Re-read is a simple and effective technique to detect and correct errors.
Read retry is a more advanced technique that involves adjusting the read parameters of the memory controller based on the characteristics of the NAND flash memory. Read parameters such as read voltage and read latency can be adjusted to improve the reliability of data reading. Read retry requires more complex algorithms and can improve the performance of the NAND flash memory in high-noise environments.
In summary, re-read and read retry are two techniques used by NAND flash memory controllers to improve the reliability of data reading. Re-read is a simple and effective technique that reads the same data multiple times and compares the results to detect errors. Read retry is a more advanced technique that adjusts the read parameters of the memory controller based on the characteristics of the NAND flash memory to improve the reliability of data reading.
if(FLASH_LATENCY_DEFAULT > (READ_BIT((FLASH->ACR), FLASH_ACR_LATENCY)))
根据你提供的代码片段,这是一个条件语句。如果 `FLASH_LATENCY_DEFAULT` 大于 `FLASH_ACR_LATENCY` 的当前值,则条件为真。
条件语句的含义可以解释为:如果当前的 Flash 访问延迟(通过 `FLASH_ACR_LATENCY` 表示)小于 `FLASH_LATENCY_DEFAULT` 的值,则条件为真。
请注意,这只是对给定代码片段的简单解释,可能无法提供完整的上下文。
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