探索Ti/AlOx/TaOx/Pt模拟忆阻器的导通与开关机理
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本文主要探讨了Ti/AlOx/TaOx/Pt模拟忆阻器的导通和开关机制，发表在《物理学 letters A》(Physics Letters A, Vol. 383, Issue 12, 2019, Article No. 125877)上。作者为来自国防科技大学电子科学与技术学院的Sen Liu、Yi Sun、Bing Song等人。研究论文关注的是超薄(3nm)AlOx和(5nm)TaOx组成的忆阻器在初始重置过程后的电性能和基本特性。
首先，论文介绍了实验背景，即通过电学特性分析和元素层面的研究，深入理解这种新型忆阻器的工作原理。忆阻器作为非易失性存储元件，其关键特性在于其电阻可以随电流历史而变化，即所谓的“记忆”效应。Ti/AlOx/TaOx/Pt结构因其独特的隧道效应和氧离子迁移而展现出优异的导通和开关性能。
在研究过程中，作者着重于阐述了忆阻器的双向（导通和截止）切换机制。经过初始化重置处理后，AlOx/TaOx层显示出高度均匀性和出色的模拟电路性能。进一步的实验表明，这种切换行为不仅局限于TaOx/Pt界面的一小部分，而是可以在整个接触界面发生，说明其具有良好的全局响应能力。
研究发现，开关行为主要由隧道效应驱动，即电子或空穴通过氧化物层时需要克服势垒进行隧穿，从而改变器件的电阻状态。同时，氧离子在TaOx中的迁移起到了关键作用，它能够调控氧化层的电导率，进而影响忆阻器的导通和截止状态。通过改变电压脉冲的性质，研究人员能够控制氧离子的移动，实现忆阻器的可编程性。
这篇论文提供了一个深入理解Ti/AlOx/TaOx/Pt模拟忆阻器工作原理的重要窗口，对于优化此类器件的设计以及推动基于忆阻器的新型非冯诺依曼架构计算系统的发展具有重要意义。它展示了如何通过材料选择、制备工艺和电学特性调控来实现忆阻器的高性能和多功能性，为未来的微电子和纳米电子领域开辟了新的研究方向。
Physics Letters A 383 (2019) 125877
Contents lists available at ScienceDirect
Physics Letters A
www.elsevier.com/locate/pla
Understanding the conduction and switching mechanism of
Ti/AlO
x
/TaO
x
/Pt analog memristor
Sen Liu, Yi Sun, Bing Song, Zhiwei Li, Haijun Liu, Qingjiang Li
∗
College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China
a r t i c l e i n f o a b s t r a c t
Article history:
Received
3 April 2019
Received
in revised form 28 July 2019
Accepted
2 August 2019
Available
online 7 August 2019
Communicated
by M. Wu
Keywords:
Memristor
Switching
mechanism
Tunneling
barrier
Oxygen
ions migration
In this letter, the conduction and bipolar switching mechanism of the ultrathin AlO
x
(3 nm)/TaO
x
(5 nm)
memristor are investigated through the electrical characterization and elemental analysis. The AlO
x
/TaO
x
memristor exhibits high uniformity and excellent analog property after initial reset process. The following
experiments and analyses demonstrate that the switching behavior could take place over the whole
area of TaO
x
/Pt interface and is dominated by the tunneling barrier modulation induced by oxygen ions
migration.
© 2019 Elsevier B.V. All rights reserved.
1. Introduction
Nanoscale memristors are passive devices which can retain in-
ternal
resistance state according to the history of applied electrical
stimuli [1,2]. The most typical application of memristor is resis-
tive
random access memory (ReRAM). Under this circumstance,
binary state (ON/OFF) of the memristor has been employed to rep-
resent
digital information and the conducting filament mechanism
has been widely utilized to elucidate the binary switching be-
havior
[3–5]. Recently, analog memristors have attracted extensive
attention in the applications of neuromorphic computing, analog
computation and multi-level storage due to the excellent capability
of gradual resistance modulation [6–9]. Numerous structures and
various switching materials, such as Ag/GeSe/TiN [6], Ta/HfO
2
/Pd
[7], W/WO
x
/Pd [8], Pt/AlO
x
/TiO
2
/Pt [9], have been studied for ana-
log
memristor applications. Among them, the bi-layer structure
memristor has shown outstanding analog property and attracted
great attention. Clear understanding of the switching and conduc-
tion
mechanisms of this bi-layer structure memristor is important
for device fabrication, performance optimization and reliability im-
provement.
Zhang et al. studied the conduction and switching
mechanism of the AlO
x
/WO
x
(6 nm/65 nm) bi-layer structure de-
vice
[10]. Wang et al. revealed the switching mechanism of the
TaO
x
/TiO
2
(20 nm/60 nm) bi-layer structure analog device [11].
However, due to the difficulty of nano-structure characterization
*
Corresponding author.
E-mail
address: qingjiangli@nudt.edu.cn (Q. Li).
and elemental analysis, the detailed study on the mechanism of
the ultrathin bi-layer structure memristor in sub 10 nm regime
is still rare. It is still challenging and meaningful to explore the
switching mechanism in ultrathin multilayer structure films. Be-
sides,
the chemical composition in ultrathin metal oxides strongly
depends on the methods employed and the element ration is
generally not stoichiometric [12]. This can propose difficulty for
deeply analyzing the mechanism. As a result, post-deposition an-
nealing
is recommended to form stable stoichiometric dielectric
phase [13].
In
this letter, we have investigated the resistive switching
(RS) behaviors and the underlying switching mechanism of the
Ti/AlO
x
(3 nm)/TaO
x
(5 nm)/Pt memristor without post-deposition
annealing process. Current-induced joule-heating molds the con-
dition
for atoms arrangements like annealing. Firstly, in order to
distinguish between the localization-type and interface-type RS be-
haviors,
the area and temperature dependence of resistance were
studied. Then, the I–V curves of HRS were re-plotted in ln(I/V
2
)
vs 1/V for tunneling fitting and the tunneling parameters were
calculated with Simmons’ equation. In addition, electron energy-
loss
spectroscopy (EELS) measurements were implemented to re-
search
the distribution of oxygen ions in the oxide layers. On the
basis of the experimental results, we describe the possible switch-
ing
and conduction mechanism of our device.
2. Methods
The vertical lines of Pt/Ti (25/5 nm) bottom electrode were de-
posited
on the SiO
2
/Si substrate by e-beam evaporation after the
https://doi.org/10.1016/j.physleta.2019.125877
0375-9601/
© 2019 Elsevier B.V. All rights reserved.
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