SiNx:H后钝化提升Si/PEDOT：PSS混合异质结太阳电池性能

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本文研究了在硅/有机混合异质结太阳能电池中引入硅氮化物(SiNx:H)后侧钝化层的作用，以提升其性能。近年来，这种类型的太阳能电池因其结合了硅(Si)的高效率和有机材料的灵活性而受到广泛关注。研究者在硅基底的背面添加了一种图案化的SiNx:H层，通过等离子增强化学气相沉积和光刻技术制备，显著提高了电池的功率转换效率(PCE)。在实验中，通过将SiNx:H层应用到标准的Si/poly(3,4-乙二氧噻吩):聚苯乙烯硫酸盐(PEDOT:PSS)结构上，发现电池的开路电压(Voc)从0.523伏提升到了0.557伏，这表明该特定厚度的图案化SiNx:H层具有优良的后侧钝化效果。后侧钝化对于减小表面缺陷对电流路径的影响至关重要，从而减少了由于局部非理想区域造成的效率损失。文章深入探讨了不同钝化策略的效果，包括传统的前PEDOT:PSS钝化、单独的后侧SiNx:H钝化以及前后双层钝化（即前PEDOT:PSS与后SiNx:H的组合）。通过这些对比，研究人员揭示了后侧钝化层如何优化电池的整体性能，特别是在减少暗降和提高填充因子方面的作用。此外，文章还分析了工艺相关变量对钝化效果的影响，包括SiNx:H层的厚度、处理时间和温度等，以期找到最优化的工艺参数组合。整体来看，这项研究为设计和制造更高效、稳定的硅/有机混合异质结太阳能电池提供了有价值的见解，可能推动该领域的发展，并为未来的能源转换设备提供新的可能性。

N AN O E X P R E S S Open Access

Rear-Sided Passivation by SiN

:H Dielectric

Layer for Improved Si/PEDOT:PSS Hybrid

Heterojunction Solar Cells

Yiling Sun

1,2

, Pingqi Gao

, Jian He

, Suqiong Zhou

, Zhiqin Ying

, Xi Yang

, Yong Xiang

and Jichun Ye

Abstract

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of

silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiN

:H) onto

the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)

hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the

SiN

:H layer boosted the open circuit voltage (V

) from 0.523 to 0.557 V, suggesting the well-passivation property

of the patterned SiN

:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography

processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiN

:H, front PEDOT:PSS/rear-SiN

:H,

etc. are thoroughly investigated, in consideration of the process-related variations.

Keywords: Si/PEDOT:PSS, Hybrid solar cells, SiN

:H passivation, Photolithography

Background

Over the past several decades, crystalline silicon (c-Si)

solar cells have dominated the commercial solar cell mar-

ket due to multiple factors, such as high power conversion

efficiency (PCE) [1], abundance of raw materials, free of

toxicological issues, and well-established processing tech-

niques. However, this type of solar cells suffers from draw-

backs such expensive processing and large material

consumption due to high-temperature treatment and

thick substrate required. In recent years, organic photo-

voltaics emerge as a promising technology in the solar en-

ergy field, thanks to simple processing and low material

consumption [2–4]. The development of organic solar

cells is faced by a grand challenge: the PCE is relatively

low due to the low electron–hole separation efficiency.

The emergence of c-Si/organic hybrid photovoltaics offers

a possible route to low-cost and high-efficiency solar cells

by combining the advantages of c-Si and organic materials

[5–7]. Recently, poly(3,4ethylenedioxythiophene)/poly

(styrenesulfonate) (PEDOT:PSS) has stimulated intense

interest in the research community because of its advanta-

geous properties with respect to light transmission and

hole conductivity. Up to now, the PCE of PEDOT:PSS hy-

brid solar cells has been improved to above 13 % [8–10]

as a result of efforts in several areas including interface

modification [11, 12], surface texturing on Si [13–17], and

property tuning of PEDOT:PSS [18]. Typical improve-

ments related to the rear side is to add an ultra-thin inter-

facial layer of LiF [19], LiQ [9], or CsCO

[20] between

the c-Si layer and the back electrode, with the aims to re-

duce contact resistance and enhance the rear electric field.

With this design, the short circuit current density (J

)and

open circuit voltage (V

) are both enhanced. However, it

is critical to precisely control the thickness of these kinds

of layers at a certain value, in order to achieve a satisfied

contact resistance while not hindering charge carrier

collection.

For the purpose of passivating the n-type c-Si, hydro-

genated silicon nitride (SiN

:H) is an ideal candidate

material. SiN

:H [21], conventionally deposited by

plasma-enhanced chemical vapor deposition (PECVD),

is known to be widely used in the Si-based solar cell pro-

cessing. This dielectric layer contains considerable

amount of hydrogen bonds and positive charges (typic-

ally several 10

−2

) [22], offering good chemical and

* Correspondence: xiang@uestc.edu.cn; jichun.ye@nimte.ac.cn

School of Energy Science and Engineering, University of Electronic Science

and Technology of China, Chengdu 611731, People’s Republic of China

Ningbo Institute of Materials Technology and Engineering, Chinese

Academy of Sciences, Ningbo 315201, People ’s Republic of China

International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and

reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to

the Creative Commons license, and indicate if changes were made.

Sun et al. Nanoscale Research Letters (2016) 11:310

DOI 10.1186/s11671-016-1505-7

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