AlGaInAs/InP微环激光器的调制特性和四波混频微波生成

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"Modulation characteristics and microwave generation for AlGaInAs/InP microring lasers under four-wave mixing" 这篇论文深入探讨了AlGaInAs/InP微环激光器在四波混频下的调制特性和微波产生。AlGaInAs/InP材料体系是一种常用的半导体光学器件材料，因其优良的光电性能，广泛应用于光通信和光子集成电路。微环激光器，由于其紧凑的尺寸、高效的光反馈和多波长操作能力，成为研究的热点。论文指出，对于一个外部半径为12微米的微环激光器，在外部光学注入条件下进行了动态特性研究。在25毫安的偏置电流和290开尔文的温度下，实现了单模操作，侧模抑制比高达33.4分贝，这意味着激光器的输出光谱非常纯净。这种单模操作状态对于光通信系统中的数据传输至关重要，因为它可以减少信号干扰并提高信息传输的稳定性。进一步的研究发现，激光器的小信号调制响应具有7.5吉赫的谐振峰值频率，这表明该器件在高速数据传输应用中具有潜力。当使用可调谐激光器进行光学注入时，观察到了四波混频效应对微环激光器小信号调制响应的改善。四波混频是一种非线性光学现象，其中四个光波相互作用产生新的频率成分。在这个过程中，激光器显示出额外的谐振峰，这可能意味着能够通过这种方法生成新的光谱成分，这对于光频谱的扩展和微波信号的产生有重要意义。此外，这种改善的调制响应可能有助于提高微波信号的产生效率和质量，这对微波光子学领域来说是关键的。微波光子学是利用光子技术处理和传输微波信号的学科，它在无线通信、雷达系统和量子计算等领域有着广泛的应用。通过微环激光器的四波混频效应，可以实现更高效、更宽带的微波信号源，从而推动这些领域的技术进步。这篇论文揭示了AlGaInAs/InP微环激光器在四波混频条件下的优秀调制性能和潜在的微波信号生成能力，为未来高性能光通信和微波光子系统的设计提供了新的见解和策略。

Modulation characteristics and microwave generation

for AlGaInAs/InP microring lasers under

four-wave mixing

Ling-Xiu Zou, Yong-Zhen Huang,* Xiao-Meng Lv, Bo-Wen Liu, Heng Long, Yue-De Yang,

Jin-Long Xiao, and Yun Du

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,

Chinese Academy of Sciences, Beijing 100083, China

*Corresponding author: yzhuang@semi.ac.cn

Received August 22, 2014; revised October 22, 2014; accepted October 22, 2014;

posted October 23, 2014 (Doc. ID 221410); published November 12, 2014

The dynamic characteristics are investigated for a microring laser with an external radius of 12 μm subject to

external optical injection. Single-mode operation with a side mode suppression ratio of 33.4 dB is realized at

a biasing current of 25 mA and a temperature of 290 K, and the corresponding small-signal modulation response

is obtained with a resonance peak frequency of 7.5 GHz. Under the optical injection from a tunable laser, the

improvements of the small-signal modulation response induced by four-wave mixing are observed for the micro-

ring laser, which shows an additional resonance peak around the frequency of the beat frequency between the

lasing mode and the injecting light. Furthermore, optical generation of a microwave signal is realized by the light

beating between the lasing mode and the injecting light measured by a high-speed photodetector and a spectrum

OCIS codes: (230.4320) Nonlinear optical devices; (190.4380) Nonlinear optics, four-wave mixing;

(140.5960) Semiconductor lasers.

http://dx.doi.org/10.1364/PRJ.2.000177

1. INTRODUCTION

As a typical whispering-gallery mode (WGM) microlaser, the

microdisk laser has attracted much attention in the past two

decades as a potential light source for photonic integrated cir-

cuits and optical interconnects, due to the advantages of small

cavity volume, low threshold, and low power consumption

[

1–3]. Microdisk lasers evanescently coupled with a lateral

or vertical bus waveguide were applied to realize directional

emission [

4–7]. Our group has demonstrated directional emis-

sion microdisk lasers by directly connecting an output wave-

guide to the microdisk resonator, with the cavity laterally

confined by SiO

∕p-electrode metal layer or polymer cladding

layer [

8–10]. For directional emission microdisk lasers con-

nected with an output waveguide, the mode Q factor can be

adjusted to realize high-speed modulation [

11,12]. Recently,

microring lasers have been demonstrated to have lower

threshold current and better high-speed modulation charac-

teristics than microdisk lasers, due to the smaller cavity

volume and less effect of carrier spatial hole burning and

diffusion [

13,14].

Directly modulated microlasers have the merits of small

footprints and low power consumption compared with a light

source integrated with an external optical modulator. How-

ever, the direct modulation speeds are usually limited by

the relaxation oscillation frequency for semiconductor lasers.

To further improve the modulation speed, optical injection

locking has been investigated for semiconductor distributed

feedback lasers, vertical-cavity surface-emitting lasers, and

photonic crystal lasers [

15–17]. Optical injection operation

has also been investigated as an efficient method for the

generation of tunable millimeter-wave or RF signals [

18–20].

The all-optical response of a semiconductor ring laser subject

to dual-optical injections was also analyzed for its potential

applications in all-optical switching, regeneration, or optical

memory [

21]. In this paper, we investigate the steady and dy-

namic characteristics for a microring laser subject to external

optical injection. We introduce the fabrication process for the

microring lasers in Section

2, and give the steady behaviors as

well as its small-signal performance at the free-running state

in Section

3. The small-signal modulation characteristics are

reported for microring lasers with four-wave mixing under ex-

ternal optical injection in Section

4. Microwave signals gener-

ated by optical signal beating are investigated in Section

Finally, the conclusion is given in Section

2. DEVICE DESIGN AND FABRICATION

Similar to microdisk lasers [10], the introduction of an output

waveguide to a microring resonator, which breaks the sym-

metries of the resonator, will cause mode coupling between

the WGMs with close mode wavelengths. The mode character-

istics of microring lasers are greatly influenced by the value of

the inner radius [

22]. In this article, we consider a microring

laser with an outer radius R

 12 μm and an inner radius

 5 μm, connected with a 2-μm-wide output waveguide.

Using the two-dimensional (2D) FDTD technique with sim-

ilar parameters as in [

14], we excite a high-Q TE mode cen-

tered at 1553.2 nm using a long pulse exciting source and

plot the symmetric mode field distribution in Fig.

1(a). The

field distributions in the external region as well as the output

waveguide are magnified 10 times for clarity. The Q factors for

Zou et al. Vol. 2, No. 6 / December 2014 / Photon. Res. 177

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