英飞凌TLE94104EP芯片中文规格书：汽车级四半桥驱动器

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"TLE94104EP是英飞凌公司生产的四通道半桥功率输出芯片，适用于汽车领域的运动控制应用，如HVAC（加热、通风和空调）风门直流电机控制。" 该规格书详细介绍了TLE94104EP芯片的功能特性和应用场景。以下是关键知识点： 1. **四通道半桥功率输出**：TLE94104EP芯片内置四个半桥结构，可以独立控制四个负载通道，适用于驱动直流电机或其他需要双向电流控制的应用。 2. **低功耗睡眠模式**：在待机或非工作状态下，该芯片能实现极低的功耗，有利于提高整体系统的能源效率。 3. **兼容3.3V/5V输入**：输入信号可接受3.3V或5V，具有宽电压范围适应性，简化了系统设计。 4. **过载和短路保护**：所有输出端都配备有保护机制，能在负载出现过载或短路时自动断开，确保电路安全。 5. **独立诊断输出**：能够独立诊断每个输出端的过流和开路状态，提高了故障检测能力。 6. **ON状态下开放负载诊断**：即使在高侧和低侧输出开启时也能检测到开路情况，增强可靠性。 7. **16位标准SPI接口**：采用串行外设接口，支持菊花链连接和帧响应功能，便于控制和诊断。 8. **快速全局错误标志诊断**：通过全局错误标志，能迅速识别并响应系统中的异常情况。 9. **过温和欠温保护**：集成过温预警告和保护功能，防止芯片因温度过高而受损。 10. **过压和欠压锁定**：当电源电压超出设定范围时，会自动锁定输出，防止设备损坏。 11. **交叉电流保护**：防止在并联使用多个半桥时出现电流不平衡，确保电机运行稳定。 12. **符合汽车应用标准**：该产品已通过AEC-Q100验证，满足汽车电子设备的严格品质要求。 TLE94104EP芯片特别适合于汽车行业的HVAC系统、单稳态和双稳态继电器、侧视镜XY调节以及电压控制的双极步进电机等应用。其全面的保护功能和诊断能力使其成为汽车电子系统中可靠的电机驱动解决方案。

Datasheet 11 1.0

2017-12-07

TLE94104EP

General Product Characteristics

3.3 Thermal Resistance

Table 4 Thermal Resistance TLE94104EP

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Junction to Case, T

= -40°C R

thjC_cold

–14–K/W

Junction to Case, T

= 85°C R

thjC_hot

–17–K/W

Junction to ambient, T

= -40°C

(1s0p, minimal footprint)

thjA_cold_

min

– 126 – K/W

1) Not subject to production test, specified by design.

2) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 1s0p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with minimal footprint copper area and 35µm thickness.

Ta = -40°C, each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= 85°C

(1s0p, minimal footprint)

thjA_hot_m

– 134 – K/W

Junction to ambient, T

= -40°C

(1s0p, 300mm2 Cu)

thjA_cold_3

–69–K/W

3) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 1s0p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with additional cooling of 300mm2 copper area and 35µm

thickness. Ta = -40°C, each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= 85°C

(1s0p, 300mm2 Cu)

thjA_hot_30

–81–K/W

Junction to ambient, T

= -40°C

(1s0p, 600mm2 Cu)

thjA_cold_6

–67–K/W

Junction to ambient, T

= 85°C

(1s0p, 600mm2 Cu)

thjA_hot_60

–79–K/W

4) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 1s0p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with additional cooling of 600mm2 copper area and 35µm

thickness. Ta = -40°C, each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= -40°C

(2s2p)

thjA_cold_2

s2p

–53–K/W

5) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 2s2p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with two inner copper layers ( 4 x 35µm Cu). Ta = -40°C,

each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= 85°C

(2s2p)

thjA_hot_2s

–67–K/W

Datasheet 12 1.0

2017-12-07

TLE94104EP

General Product Characteristics

3.4 Electrical Characteristics

Table 5 Electrical Characteristics, V

=5.5 V to 20 V, V

= 3.0V to 5.5V, T

= -40°C to +150°C, EN= HIGH,

OUTn

= 0 A; Typical values refer to V

= 5.0 V, V

= 13.5 V and T

= 25 °C unless otherwise

specified; all voltages with respect to ground, positive current flowing into pin (unless

otherwise specified)

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Current Consumption, EN = GND

Supply Quiescent current I

– 0.1 2 µA -40°C ≤ T

≤ 85°C P_4.4.1

Logic supply quiescent current I

DD_Q

– 0.1 1 µA -40°C ≤ T

≤ 85°C P_4.4.2

Total quiescent current I

DD_Q

– 0.6 3 µA -40°C ≤ T

≤ 85°C P_4.4.3

Current Consumption, EN=HIGH

Supply current I

– 0.13 0.5 mA Power drivers and

power stages are

off

P_4.4.4

Supply current I

S_HSON

– 1.5 3 mA All high-sides ON

1)2)

P_4.4.101

Logic supply current I

– 0.6 2.5 mA SPI not active P_4.4.5

Logic supply current I

DD_RUN

–2.5–mASPI 5MHz

P_4.4.6

Total supply current I

DD_RUN

–2.7–mASPI 5MHz

P_4.4.7

Over- and Undervoltage Lockout

Undervoltage Switch ON

voltage threshold

UV ON

4.4 4.90 5.3 V V

increasing P_4.4.8

Undervoltage Switch OFF

voltage threshold

UV OFF

4 4.50 4.9 V V

decreasing P_4.4.9

Undervoltage Switch ON/OFF

hysteresis

UV HY

–0.40–VV

UV ON

- V

UV OFF

P_4.4.10

Overvoltage Switch OFF voltage

threshold

OV OFF

21 23 25 V V

increasing P_4.4.11

Overvoltage Switch ON voltage

threshold

OV ON

20 22 24 V V

decreasing P_4.4.12

Overvoltage Switch ON/OFF

hysteresis

OV HY

–1–VV

OV OFF

- V

OV ON

P_4.4.13

Power-On-Reset V

DD POR

2.40 2.63 2.90 V V

increasing P_4.4.14

Power-Off-Reset V

DD POffR

2.35 2.57 2.85 V V

decreasing P_4.4.15

Power ON/OFF hysteresis V

DD POR HY

–0.06–VV

DD POR

- V

DD POffR

P_4.4.98

Static Drain-source ON-Resistance (High-Side or Low-Side)

High-Side or Low-Side R

DSON

(all outputs)

DSON_HB_25C

– 825 1200 mΩ I

OUT

= ±0.5 A;

= 25 °C

P_4.4.16

High-Side or Low-Side R

DSON

(all outputs)

DSON_HB_150

– 1350 1800 mΩ I

OUT

= ±0.5 A;

= 150 °C

P_4.4.17

Datasheet 13 1.0

2017-12-07

TLE94104EP

General Product Characteristics

Output Protection and Diagnosis of high-side (HS) channels of half-bridge output

HS Overcurrent Shutdown

Threshold

SD_HS

-1.5 -1.2 -0.9 A See Figure 5 P_4.4.20

Difference between shutdown

and limit current

LIM_HS

SD_HS

-1.2 -0.6 0 A

LIM_HS

| ≥ |I

SD_HS|

See Figure 5

P_4.4.21

Overcurrent Shutdown filter

time

dSD_HS

15 19 23 µs

P_4.4.22

Open Load Detection Current I

OLD1_HS

-15 -8 -3 mA - P_4.4.23

Open Load Detection filter time t

OLD1_HS

2000 3000 4000 µs

P_4.4.24

Output Protection and Diagnosis of low-side (LS) channels of half-bridge output

LS Overcurrent Shutdown

Threshold

SD_LS

0.9 1.2 1.5 A See Figure 6 P_4.4.27

Difference between shutdown

and limit current

LIM_LS

SD_LS

00.61.2A

LIM_LS

≥ I

SD_LS

Figure 6

P_4.4.28

Overcurrent Shutdown filter

time

dSD_LS

15 19 23 µs

P_4.4.29

Open Load Detection Current I

OLD_LS

3 8 15 mA - P_4.4.30

Open Load Detection filter time t

OLD_LS

2000 3000 4000 µs

P_4.4.31

Outputs OUT(1...n) leakage current

HS leakage current in off state I

QLHn_NOR

-2 -0.5 – µA V

OUTn

= 0V ; EN=High P_4.4.32

HS leakage current in off state I

QLHn_SLE

-2 -0.5 – µA V

OUTn

= 0V; EN=GND P_4.4.33

LS Leakage current in off state I

QLLn_NOR

–0.52µAV

OUTn

= V

; EN=High P_4.4.34

LS Leakage current in off state I

QLLn_SLE

–0.52µAV

OUTn

= V

; EN=GND P_4.4.35

Output Switching Times. See Figure 7 and Figure 8.

Slew rate of high-side and low-

side outputs

VOUT

/ dt 0.1 0.45 0.75 V/µs Resistive load =

100Ω; V

=13.5V

P_4.4.36

Output delay time high side

driver on

dONH

52035µsResistive load =

100Ω to GND

P_4.4.37

Output delay time high side

driver off

dOFFH

15 45 75 µs Resistive load =

100Ω to GND

P_4.4.38

Output delay time low side

driver on

dONL

52035µsResistive load =

100Ω to VS

P_4.4.39

Output delay time low side

driver off

dOFFL

15 45 75 µs Resistive load =

100Ω to VS

P_4.4.40

Cross current protection time,

high to low

DHL

100 130 160 µs Resistive load =

100Ω

P_4.4.41

Table 5 Electrical Characteristics, V

=5.5 V to 20 V, V

= 3.0V to 5.5V, T

= -40°C to +150°C, EN= HIGH,

OUTn

= 0 A; Typical values refer to V

= 5.0 V, V

= 13.5 V and T

= 25 °C unless otherwise

specified; all voltages with respect to ground, positive current flowing into pin (unless

otherwise specified) (cont’d)

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

剩余62页未读，继续阅读

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