德州仪器(TI)高精度模拟芯片英文原版资料

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"这份资源是德州仪器(TI)的高精度模拟芯片应用期刊，属于2006年第二季度发布的内容。文档包含了清晰的英文文本，非扫描版本，因此文字可读性很高，且含有原理图和波形图。这份资料主要涵盖了TI的高性能模拟产品及其应用，旨在为设计工程师和电子爱好者提供技术指导和参考资料。" TI作为全球知名的半导体制造商，其模拟芯片技术在业界享有盛誉。这份文档中包含的重要知识点可能包括： 1. **模拟芯片技术**：TI的模拟芯片涵盖了放大器、数据转换器、电源管理、接口、隔离、时钟与定时、信号链等各类产品。这些芯片在各种电子设备中扮演着关键角色，如信号处理、电源管理、通信接口等。 2. **原理图**：原理图是理解和设计电子电路的关键，这份资料中的原理图可以帮助读者理解TI模拟芯片的工作原理和典型应用电路，例如如何将芯片正确接入电路，以及与其他组件的交互方式。 3. **波形图**：波形图通常用于展示信号的动态特性，如频率响应、失真、噪声性能等。通过分析波形图，工程师可以评估芯片在不同条件下的性能，以及是否满足特定应用的需求。 4. **产品更新与支持**：TI保留随时改进和更新产品或服务的权利，这提示读者应定期检查最新的技术信息，确保所使用的数据是最新的。此外，TI的标准保修政策也说明了其对硬件产品性能的承诺。 5. **测试与质量控制**：TI采用必要的测试和其他质量控制技术来保证产品的性能符合其销售时的规格。虽然并非所有参数都进行测试，但TI会根据政府要求进行必要的验证。 6. **订购与销售条款**：TI强调客户在下单前应获取最新和完整的信息，并确认这些信息符合其需求。所有产品销售均受TI在订单确认时提供的销售条款约束。这份资料对于从事电子设计、产品研发或希望深入理解TI模拟芯片技术的人来说是一份宝贵的资源。通过阅读和研究，他们可以提升自己的技能，优化电路设计，同时了解如何最大限度地利用TI的产品。

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Texas Instruments Incorporated

Data Acquisition

Analog Applications Journal

High-Performance Analog Products www.ti.com/aaj 2Q 2006

and input voltage noise density specifications (see Figure 2).

The input voltage noise specification (10 µV

) describes

the low-frequency noise of the amplifier in terms of a

bandwidth. This bandwidth is part of the 1/f noise region

of the amplifier. The transistors in the input stage of the

amplifier, along with the input-stage active load, generate

this noise.

Input voltage noise density calls out a noise figure that

refers to one frequency. For instance, the electrical charac-

teristics table in Figure 2 shows that the input voltage noise

density (e

) at 10 kHz is equal to 17 nV/√Hz. Usually this

specification appears in the broadband-noise portion of the

frequency plot (Figure 2). Theoretically, this broadband

noise is flat. Assuming that it is flat is a good estimate of

the amplifier’s behavior. The resistors inside the opera-

tional amplifier primarily generate the broadband noise

whether they are diffused resistors or the source and

drain of the transistors.

The amplifier datasheet contains a typical specification

graph that shows the input voltage noise density versus

frequency. Figure 2 is an example of this type of graph. In

this example, the input voltage noise specification is equal

to the area beneath the input-voltage, noise-density curve

between the specified frequencies of 0.1 and 10 Hz. Note

that the units for this specification are peak-to-peak. To

convert this to an rms value, simply divide the peak-to-peak

value by 6.6 (industry-standard crest factor [CF] = 3.3).

Table 1 contains typical CF values used to convert rms

to peak-to-peak values (and vice versa). To estimate the

peak-to-peak operational amplifier output noise voltage,

multiply the rms output voltage by 2 × CF. To estimate the

ADC peak-to-peak output bit performance, subtract the

bit crest factor (BCF) from the rms specification.

1000

10000

100

INPUT VOLTAGE NOISE SPECTRAL DENSITY

vs FREQUENCY

Frequency (Hz)

1010.1 100 1 k 10 k 100 k

Input Voltage Noise (nV/ Hz)

Broadband

Noise Region

1/f Noise

Region

nV/ Hz

Typical

µV

Parameter

Electrical Characteristics for OPA363

NOISE

Input Voltage Noise, f = 0.1 to 10 Hz e

Input Voltage Noise Density,f=10kHz e

Units

Figure 2. OPA363 amplifier noise parameters

CREST BIT CREST ADC CONVERSIONS WITHIN

FACTOR (CF) FACTOR (BCF) THE PEAK-TO-PEAK LEVELS

(V) (Bits) (%)

2.6 2.38 99

3.3* 2.72 99.9

3.9 2.96 99.99

4.4 3.14 99.999

4.9 3.29 99.9999

Table 1. Crest factor and bit crest factor values used for

conversions from rms to peak-to-peak

*Industry standard

Texas Instruments Incorporated

Data Acquisition

Analog Applications Journal

2Q 2006 www.ti.com/aaj High-Performance Analog Products

We can easily calculate the noise under-

neath the curve in Figure 2 for different

input voltage noise bandwidths in the 1/f

region. The first order of business in this

calculation is to determine the input

noise density at 1 Hz. Once we find that

value, the following simple formula will

provide the rms noise under the curve.

where C is equal to the input noise den-

sity at 1 Hz.

As an example, the amount of rms

noise produced by the amplifier shown

in Figure 2 from 0.1 Hz to 6000 Hz is:

With this calculation, and with the

amplifier noise gain G = 1, the SNR at

the output of the amplifier for the 1/f noise is:

When we think about noise at these low frequencies,

we may jump to the conclusion that we should take this

formula down to a very low frequency, such as 0.0001 Hz

(0.0001 Hz = 1 cycle per 2.8 hours). However, at frequen-

cies lower than 0.1 Hz, which is one cycle every 10 seconds,

it is very possible that other things such as temperature,

aging, or component life are changing in the circuit. Realis-

tically, low-frequency noise from the amplifier will probably

not appear at this sample speed; but changes in the circuit,

such as temperature or power supply voltage, may.

The amplifier table of specifications (Figure 2) also

gives the input noise density value. This specification is

always at a higher frequency, in the area where the input

voltage noise is relatively constant. For this region of the

curve, multiplying the square root of the bandwidth and

the noise density derives the noise across this bandwidth.

For example, if the noise of the amplifier is 17 nV/√Hz at

SNR

OPA

OUT

OPA













log

-rms

(1/f): f1-f2

55 V

2.32 V

, and

117.6 dB.













=SNR

OPA

(1/f): f1-f2

700 nV















ln ,

6000











, and

2.32 Vrms.

(1/f): f1-f2

V µ

(1/f): f1-f2













ln ,

10 kHz, the noise from the amplifier across the bandwidth

of 6 kHz to 100 kHz is:

where BW is equal to the bandwidth of interest.

So how do we get from the manufacturer’s graph to an

RTO noise value? We calculate the area beneath the noise

curve and multiply that times the noise gain of the amplifier.

In this example, the noise gain of our circuit is +1 V/V. We

determine the noise that the amplifier contributes in both

regions and then add the two values together using the

square root of the sum of the squares. Figure 3 shows the

formula for this calculation and illustrates the two regions.

Figure 3 separates the noise into two parts. In region e

we gain the 1/f noise of the amplifier by the dc gain of the

amplifier circuit, which is +1 V/V. The specifications for

amplifier noise are in nanovolts per square root of hertz.

So the analysis is complete when we multiply the average

noise over the region by the square root of the bandwidth

of that region. For CMOS amplifiers, the 1/f region is usually

from 0.1 Hz to 100 Hz up to 1000 Hz. Since this noise

value is multiplied by the square root of the bandwidth, its

VBW

VeBW

1-100 kHz

(Noise Density at 10 kHz)=

--100 kHz

1-100 kHz

17 nV/ Hz , and

5.21 V

()

−

()

100 000 1 000,,

V µ rrms,

Frequency (Hz)

Amplifier

Open-Loop

Gain

Total Output Noise:

V=e+e

N(Amp-RTO) 1

Amplifier

Closed-Loop

Noise Gain

Gain (dB)

100

1000

10000

100

RTI

Noise

Density

(

nV/ Hz

)

RTI

Ampifier

Noise

Figure 3. Typical RTI noise evaluation

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