Micro Automotive LPDDR4/LPDDR4X SDRAM：超低电压与高效能规格

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"Micro Automotive LPDDR4/LPDDR4X SDRAM是专为汽车应用设计的内存解决方案，包括MT53E1G16D1、MT53E1G32D2和MT53E2G32D4等型号。这款数据手册详细阐述了LPDDR4和LPDDR4X统一产品的操作，并特别强调了LPDDR4X在0.6V VDDQ电压下的特定需求。当作为LPDDR4设备使用时，需要参照数据手册末尾的LPDDR4 1.10V VDDQ设置部分。" Micro Automotive LPDDR4/LPDDR4X SDRAM是微芯科技推出的一种适用于汽车行业的低功耗双倍数据速率同步动态随机存取存储器（LPDDR4/LPDDR4X）。该系列内存器件具有以下关键特性： 1. **超低电压核心和I/O电源**：支持VDD1电压在1.70V至1.95V之间，标称值为1.80V；VDD2在1.06V至1.17V，标称值为1.10V；VDDQ有两种选择，一种是1.06V至1.17V，标称值为1.10V，另一种是低电压选项，范围在0.57V至0.65V，标称值为0.60V。这些低电压设计有助于降低整体系统功耗。 2. **频率范围**：支持从2133MHz到10MHz的数据速率，这意味着数据传输速度可高达4266Mb/s至20Mb/s每引脚，提供了宽泛的性能调节空间。 3. **16n预取 DDR架构**：采用16n预取技术，提高数据处理效率，提升内存带宽。 4. **并发操作的8个内部银行**：每个通道有8个内部银行，允许并行操作，提高了内存访问效率。 5. **单数据速率CMD/ADR入口**：命令和地址输入采用单数据速率，简化系统设计。 6. **双向差分数据 strobe**：每个字节线路都配备双向差分数据 strobe，确保数据传输的准确性和稳定性。 7. **可编程读写延迟（RL/WL）**：用户可以根据系统需求调整读写延迟，优化性能。 8. **可编程和动态调整的突发长度（BL=16,32）**：支持16和32的突发长度，以适应不同应用场景。 9. **按银行定向刷新**：支持按银行进行定向刷新，便于同时进行多个银行操作和命令调度。 10. **每个晶片高达8.5GB/s的带宽**：提供高带宽，满足高性能计算和数据密集型应用的需求。 11. **片上温度传感器**：内置温度传感器，可以控制自刷新速率，确保在不同环境温度下稳定工作。 12. **部分数组自刷新（PASR）**：能够实现部分内存阵列的自刷新，进一步节省功耗。 13. **可选的输出驱动**：用户可以根据系统接口的需求选择不同的输出驱动设置，以达到最佳信号完整性和兼容性。 Micro Automotive LPDDR4/LPDDR4X SDRAM是为汽车电子系统设计的高效能、低功耗内存解决方案，通过其特性优化了能源效率、数据传输速度和系统灵活性，满足现代汽车应用中对高性能和可靠性的严格要求。

Table 207: MR0 Device Feature 0 (MA[5:0] = 00h) ........................................................................................... 277

Table 208: MR0 Op-Code Bit Definitions ....................................................................................................... 277

Table 209: MR3 I/O Configuration 1 (MA[5:0] = 03h) ...................................................................................... 278

Table 210: MR3 Op-Code Bit Definitions ....................................................................................................... 279

Table 211: MR12 Register Information (MA[5:0] = 0Ch) .................................................................................. 280

Table 212: MR12 Op-Code Bit Definitions ...................................................................................................... 280

Table 213: Mode Register 14 (MA[5:0] = 0Eh) ................................................................................................. 280

Table 214: MR14 Op-Code Bit Definition ....................................................................................................... 281

Table 215: V

REF

Setting for Range[0] and Range[1] .......................................................................................... 282

Table 216: MR22 Register Information (MA[5:0] = 16h) ................................................................................... 283

Table 217: MR22 Register Information ........................................................................................................... 283

Table 218: Reference Voltage for

LZ(DQS),

HZ(DQS) Timing Measurements .................................................. 286

Table 219: Reference Voltage for

LZ(DQ),

HZ(DQ) Timing Measurements ..................................................... 288

Table 220: Internal V

REF(CA)

Specifications ..................................................................................................... 289

Table 221: Internal V

REF(DQ)

Specifications .................................................................................................... 290

Table 222: Pull-Down Driver Characteristics – ZQ Calibration ........................................................................ 292

Table 223: Pull-Up Characteristics – ZQ Calibration ....................................................................................... 292

Table 224: Terminated Valid Calibration Points .............................................................................................. 292

Table 225: Command Bus ODT State ............................................................................................................. 293

Table 226: ODT DC Electrical Characteristics for Command/Address Bus – up to 3200 Mb/s ........................... 294

Table 227: ODT DC Electrical Characteristics for Command/Address Bus – Beyond 3200 Mb/s ....................... 295

Table 228: ODT DC Electrical Characteristics for DQ Bus– up to 3200 Mb/s .................................................... 296

Table 229: ODT DC Electrical Characteristics for DQ Bus – Beyond 3200 Mb/s ................................................ 297

Table 230: Output Driver and Termination Register Sensitivity Definition ....................................................... 298

Table 231: Output Driver and Termination Register Temperature and Voltage Sensitivity ................................. 298

Table 232: Recommended DC Operating Conditions ..................................................................................... 299

Table 233: Single-Ended Output Slew Rate .................................................................................................... 299

Table 234: Differential Output Slew Rate ....................................................................................................... 300

Micron Confidential and Proprietary

200b: x16/x32 Automotive LPDDR4/LPDDR4X SDRAM

Features

CCM005-554574167-10729

200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf – Rev. F 12/2020 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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General Description

The 16Gb low-power DDR4 SDRAM (LPDDR4) or low V

DDQ

(LPDDR4X) is a high-speed,

CMOS dynamic random-access memory device. This 8-bank device is internally config-

ured with ×16 I/O.

Micron Confidential and Proprietary

200b: x16/x32 Automotive LPDDR4/LPDDR4X SDRAM

Important Notes and Warnings

CCM005-554574167-10729

200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf – Rev. F 12/2020 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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Micro Automotive LPDDR4/LPDDR4X SDRAM：超低电压与高效能规格

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