ITO衬底上的ZnO/MgO核壳纳米棒阵列：合成与光致发光研究

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"ITO衬底上对准的ZnO / MgO核壳纳米棒阵列的合成与表征" 这篇研究论文专注于在ITO（氧化铟锡）衬底上通过水热法成功合成了对齐的ZnO/MgO核壳纳米棒阵列，并对其进行了详细的表征。ZnO是一种具有宽禁带（3.37电子伏特）的半导体材料，具有优异的光电性能，而MgO则是一种绝缘材料，其在半导体领域的应用主要得益于其独特的光学和电学特性。 1. 水热法合成水热法是一种在高温高压下利用水作为溶剂的化学合成方法，适用于制备纳米材料。在这项研究中，通过这种技术，研究人员能够在ITO衬底上精确控制ZnO纳米棒的生长方向和结构，进一步形成ZnO/MgO核壳结构。 2. 核壳结构 ZnO/MgO核壳纳米棒是类型I异质结构，这意味着电子和空穴都被限制在ZnO纳米棒的核心区域。这种结构设计有助于提高光致发光（PL）强度，因为电子和空穴的复合几率增加，减少了非辐射复合的可能性。 3. 光致发光增强 PL发射的显著增强被归因于两个因素：一是MgO外壳的生长抑制了ZnO表面的缺陷，从而降低了非辐射复合；二是由于电子和空穴在核心区域的局域化，增强了发光效率。 4. 温度依赖性PL 通过测量温度依赖性的PL，研究人员得出ZnO/MgO核壳纳米棒的激活能（Ea）为63meV。这表明，随着温度的变化，材料的发光性质呈现出特定的动力学行为，这对于理解和优化该材料的光电性能至关重要。 5. 应用前景这种ZnO/MgO核壳纳米棒阵列有望应用于光电子器件，如太阳能电池、发光二极管（LEDs）、传感器以及光电催化等领域，因为它们的增强光致发光性能可以提高器件的效率和稳定性。该研究揭示了通过精细控制合成工艺在ITO衬底上制备的ZnO/MgO核壳纳米棒阵列的优越性能，为纳米材料的光电器件应用提供了新的设计思路和实验依据。

Synthesis and characterization of aligned ZnO/MgO core–shell

nanorod arrays on ITO substrate

M. Gao

•

J. H. Yang

•

L. L. Yang

•

Y. J. Zhang

•

H. L. Liu

•

H. G. Fan

•

J. H. Lang

•

Y. R. Sui

•

B. Feng

•

Y. F. Sun

•

Z. Q. Zhang

•

H. Song

Received: 24 December 2012 / Accepted: 21 March 2013 / Published online: 9 April 2013

Ó Springer-Verlag Berlin Heidelberg 2013

Abstract ZnO/MgO core–shell nanorod arrays were

synthesized successfully by the hydrothermal growth

method. Photoluminescence (PL) emission from the

nanorods showed remarkable enhancement after the

growth of the MgO layer. The ZnO/MgO core–shell

nanorods are type-I heterostructures, the electrons and

holes of which are both conﬁned in the core of the

nanorods, as a result, leading to the increase of the

photoluminescence intensity in this system. In addition,

another reason for the enhancement of PL emission was

the deposition of MgO shell suppression of surface

defects. In addition, the activation energy (E

)of

63 meV in the ZnO/MgO core–shell nanorods was

obtained from temperature-dependent PL.

1 Introduction

ZnO is a wide-bandgap (3.37 eV) semiconducting

material with good chemical stability, making it useful in

solar cells, light emitting diodes, gas sensing devices and

transistors [1–3]. In the ﬁeld of nanotechnology the

synthesis of controllable structures is crucial for the

development of functional devices. Recent interest in the

nanostructures has boosted the design of nanoscale

materials with speciﬁc morphologies for novel device

applications, since it is known that physical and chemical

properties of materials are strongly inﬂuenced by their

size and shape [4, 5]. Recently, many ZnO nanorod

devices have been reported to be fabricated by the facile

and low-temperature (below 100 °C) hydrothermal

methods [6, 7]. But this low-temperature chemical

growth method will introduce high defect density, it may

be disadvantageous to passivate the surface of the

nanorods to control the surface reactivity and limit the

electronic inﬂuence of surface defects [8]. It is reported

that a common technique to control and enhance the

properties of nanostructures is to create core–shell het-

erostructures [9, 10]. As a typical wide-bandgap insula-

tor, MgO has drawn special attention due to its important

use as a passivation layer in the study of chemical

sensors, optical devices and superconductor products [11,

12]. Previously, MgO as a shell onto a metal oxide

semiconducting core was developed using high-temper-

ature synthesis routes [13]. But these methods are

incompatible with low-cost, easily reproducible and large

industrial scale fabrication of products.

Here we report a low-temperature (with the entire syn-

thesis being possible under 100 °C), simple and efﬁcient

two-step fabrication process to fabricate ZnO nanorods

inner- and MgO outer-shell layers. We comparatively

M. Gao  B. Feng  Y. F. Sun  H. Song

Key Laboratory of Excited State Processes, Changchun Institute

of Optics, Fine Mechanics and Physics, Chinese Academy of

Sciences, South Nanhu Street No. 3888, Changchun 130033,

People’s Republic of China

M. Gao  B. Feng  Y. F. Sun

Graduate School of the Chinese Academy of Sciences, Sanlihe

Road No. 52, Beijing 100049, People’s Republic of China

M. Gao  J. H. Yang (&)  L. L. Yang 

Y. J. Zhang  H. L. Liu  H. G. Fan  J. H. Lang 

Y. R. Sui  B. Feng  Y. F. Sun  Z. Q. Zhang

Key Laboratory of Functional Materials Physics and Chemistry

of the Ministry of Education, Institute of Condensed State

Physics, Jilin Normal University, Haifeng Street No. 1301,

Siping 136000, People’s Republic of China

e-mail: jhyang1@jlnu.edu.cn

123

Appl. Phys. B (2013) 112:539–545

DOI 10.1007/s00340-013-5436-z

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