5
16 Meg x 4 EDO DRAM Micron Technology, Inc., reserves the right to change products or specifications without notice.
D22_2.p65 – Rev. 5/00 ©2000, Micron Technology, Inc.
16 MEG x 4
EDO DRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Relative to VSS ................ -1V to +4.6V
Voltage on NC, Inputs or I/O Pins
Relative to VSS ....................................... -1V to +4.6V
Operating Temperature, T
A
(ambient) ... 0°C to +70°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ................................................... 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Note: 1) (VCC = +3.3V ±0.3V)
PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES
SUPPLY VOLTAGE VCC 3 3.6 V
INPUT HIGH VOLTAGE:
Valid Logic 1; All inputs, I/Os and any NC VIH 2VCC + 0.3 V 26
INPUT LOW VOLTAGE:
Valid Logic 0; All inputs, I/Os and any NC VIL -0.3 0.8 V 26
INPUT LEAKAGE CURRENT:
Any input at VIN (0V ≤ VIN ≤ VCC + 0.3V); II -2 2 µA 27
All other pins not under test = 0V
OUTPUT HIGH VOLTAGE:
IOUT = -2mA VOH 2.4–V
OUTPUT LOW VOLTAGE:
IOUT = 2mA VOL – 0.4 V
OUTPUT LEAKAGE CURRENT:
Any output at VOUT (0V ≤ VOUT ≤ VCC + 0.3V); IOZ -5 5 µA
DQ is disabled and in High-Z state
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