SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter
Symbol Conditions Values Unit
min. typ. max.
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=7A
- 8.3 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 1200 - pF
Output capacitance C
oss
- 390 -
Reverse transfer capacitance C
rss
- 30 -
Effective output capacitance,
5)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
- 45 -
Effective output capacitance,
6)
time related
C
o(tr)
- 85 -
Turn-on delay time t
d(on)
V
DD
=380V, V
GS
=0/10V,
I
D
=11A,
R
G
=6.8Ω
- 10 - ns
Rise time t
r
- 5 -
Turn-off delay time t
d(off)
- 44 70
Fall time t
f
- 5 9
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480V, I
D
=11A - 5.5 - nC
Gate to drain charge Q
gd
- 22 -
Gate charge total Q
g
V
DD
=480V, I
D
=11A,
V
GS
=0 to 10V
- 45 60
Gate plateau voltage V
(plateau)
V
DD
=480V, I
D
=11A - 5.5 - V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
6
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
7
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
2018-02-09