基于双栅极有机RFID的模拟与设计研究

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"Simulation and design of organic RFID based on dual-gate OFET" 本文是关于基于双栅极有机场效应晶体管（Organic Field-Effect Transistor, OFET）的有机射频识别（Radio Frequency Identification, RFID）系统的研究论文。在2016年第三届国际信息科学与控制工程会议上发表，由南京邮电大学计算机科学与技术学院的舒申、孙丽娟、王如川和顾磊等人共同撰写，并隶属于江苏无线传感器网络高技术研究中心。双栅极OFET模型被提出并用于构建有机RFID的模拟/数字混合活动库。这种结构提供了一种在有机材料基础上实现高性能电子设备的新方法。文章中详细讨论了双栅极OFET和单栅极OFET实现的零偏压反相器（Zero-VGS Inverter），并对两种结构进行了分析。结果显示，双栅极OFET模型能显著提升反相器的性能，包括增大噪声容限和提高增益。此外，作者还提出了两种双栅极OFET反相器架构，进一步证明了这种结构的优势。通过对比不同反相器实现方式下的环形振荡器（Ring Oscillator）和完整RFID标签系统的仿真结果，表明双栅极OFET解决方案可以在一定程度上提供后制造调谐性，以优化时钟频率和标签数据速率，这对于RFID系统的灵活性和可定制性具有重要意义。关键词：RFID；双栅极；有机场效应晶体管；反相器；射频识别系统该研究为有机电子学领域提供了新的设计思路，特别是在RFID技术中，双栅极OFET的应用可能引领更高效、可调整的有机电子设备发展，对于未来物联网(IoT)和智能标签技术的进步具有潜在的推动作用。同时，该研究也为电路设计者提供了优化RFID系统性能的新工具，尤其是在考虑功耗、尺寸和成本限制的场景下。

2016 3rd International Conference on Information Science and Control Engineering

1413

Simulation and design of organic RFID based on

dual-gate OFET

Shu Shen*, Lijuan Sun, Ruchuan Wang, Lei Gu

School of Computer Science & Technology, Nanjing University of Posts and Telecommunications, Nanjing, China

Jiangsu High Technology Research Key Laboratory for Wireless Sensor Network

Contacting Email: shens@njupt.edu

Abstract—A dual-gate OFET model and its multi-platform

analog/digital active library of organic RFID is presented. The

zero-V

inverters implemented by dual-gate OFET and single

gate OFET are discussed and analyzed, as well as two

architectures of the dual-gate OFET inverter are presented,

which shows the dual-gate OFET model improving the

performances of the inverter such as larger noise margin and

higher gain. Furthermore, the simulations of ring oscillator and

full RFID tag system by different inverter implementations are

compared and discussed. The dual-gate OFET solution can

provide a post-fabrication tunability to optimize the clock

frequency and tag data rate in some extent.

Keywords-RFID; Dual-gate; OFET; Inverter; Ring Oscillator

I. INTRODUCTION

In recent years, Radio Frequency identification (RFID)

systems, are increasingly gaining attention from both academia

and industries thanks to their great potential in detecting and

tracking. In fact, the range of applications of RFID tags,

starting from the traditional markets of ticketing and supply

chain management, is rapidly growing. This trend is

emphasized for low-cost RFID systems. On the contrary, RFID

of low-price, high-volume products based on conventional

fabrication technologies, has added costs that cannot be

sustained. In this framework, a promising solution, compatible

with the expected product cost, is given by the Organic Field

Effect Transistor (OFET) technology (also called, more

specifically, Organic Thin Film Transistor, OTFT). The only

way to obtain the required cost reduction, with respect to

conventional technologies, is to achieve a full integration of the

organic RFID, including a single substrate, the coupling

(radiating) elements, the analog, digital, and energy harvesting

sections. To carry out such an integrated implementation, a

reliable, accurate and easy to use simulation library, which is

tailored for organic based printed circuits, and able to handle

digital and analog subsystems, would be of great help to the

designers. Nowadays, the mainstream technology is still single

gate p-type only OFET, with intrinsic limitations about

integration of larger circuits, as a result of parameter variability.

To overcome these troubles, some research groups were

starting to study dual-gate technology in these years [1,2]. In

this work, we present a dual-gate p-type OFET technology,

which is more convenient to improve the robustness of organic

circuits.

The SPICE RFID library, which was extended to the

platform Agilent ADS and optimizing by a physics-based

model specific to OFET, has already been presented in

previous work by our group [3,4,5]. In this paper, the library is

tailored and modified in order to adapt the behavior of the dual-

gate OFET.

The paper is organized as follows: Section II provides the

organic technology issues, focusing on the dual-gate OFET

modeling strategy. Section III presents two architectures of

zero-V

inverter with dual-gate and compares their behaviors

with single gate zero-V

inverter’s. The simulations of ring

oscillator and an 8-bit RFID system are demonstrated and

discussed in Section IV. Finally, some conclusions are drawn

in Section V.

II. DUAL-GATE OFET

The threshold voltage (V

) is an important parameter that

has a strong effect on the noise margin of an organic inverter.

For the OFET with a given gate, the threshold voltage is fixed

normally. In order to tune the threshold voltage independently,

a second gate is applied [6,7]. The dual-gate transistor’s

configuration, which combines a single semiconductor layer,

top and bottom gate dielectrics, and shares source and drain

electrodes is shown in 错误!未找到引用源。.

Fig.1. cross-section of the dual-gate OFET.

In literatures studying the transfer curve of the dual-gate

OFET [1,8,9,10,11], it was found that the dependence of the

threshold voltage of the bottom-gate transistor is similarly

defined by the top-gate bias. In the first order approximation,

the threshold voltage (V

) can be described as a function of top-

gate bias according to Equation (1):

top

Gtop bot









where C

top

and C

bot

are the top and bottom dielectric

capacitances per unit area, V

Gtop

is the applied top-gate bias.

In [5], a compact DC OFET model with single gate has been

discussed and presented. For the dual-gate OFET in this paper,

we combine the second gate effect and the compact DC OFET

model together. Three additional parameters C

top

, C

bot

and V

are added in the modified model. Because V

changes

*Corresponding author:

DOI 10.1109/ICISCE.2016.301

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