无锑InP三角量子阱激光器的阱宽与数目对2.3-2.4μm波段性能的影响

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本文主要探讨了在2.30-2.44微米范围内，无锑（即抗锑）的InP基三角量子阱激光器的阱宽和阱数对其性能的影响。研究团队采用气体源分子束外延（Gas Source Molecular Beam Epitaxy, GMBE）技术，利用InAs/In0.53Ga0.47As数字合金生长出等效的三角量子阱结构，确保了与InP衬底的异质集成，并通过X射线衍射测量验证了这种准晶生长方式。研究结果显示，对于含有四个13纳米量子阱的激光器，在330K以上的温度下，已经成功实现了2.30微米的连续波发射。然而，当将量子阱宽度增加至19纳米时，虽然连续波的波长能够在290K下扩展至2.44微米，但相应的外延质量和激光性能却有所下降。这表明过宽的阱宽度可能导致应变积累，从而影响器件的稳定性。值得注意的是，为了抑制应变效应并提升激光器的性能，研究者发现适当减少阱数或保持量子阱宽度在合理范围内是有效的策略。他们在300K以上的条件下，已经实现了2.38微米的连续波激射，这显示了通过精细调节量子阱参数可以在保持高效发射的同时，优化器件的热稳定性。本文的研究对于理解和改进InP基三角量子阱激光器的设计和制造至关重要，尤其是在高光谱区域的应用，如光纤通信和长波红外探测等领域。作者的工作提供了关于如何通过优化阱宽和阱数来平衡激光性能和器件质量的重要指导，这对于未来高性能、抗应变的半导体激光器发展具有重要意义。

Effects of well widths and well numbers on InP-based triangular

quantum well lasers beyond 2.4 mm

Y. Gu, Y.G. Zhang

, X.Y. Chen, Y.Y. Cao, L. Zhou, S.P. Xi, A.Z. Li, Hsby. Li

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,

Shanghai 200050, China

article info

Available online 6 March 2015

Keywords:

A3. Molecular beam epitaxy

B1. Arsenates

B2. Semiconducting III–V materials

B3. Laser diodes

abstract

The effects of well widths and well numbers of InGaAs triangular quantum well lasers in 2.30–2.44 μm

range using antimony-free material system on InP substrates are investigated. The triangular quantum

well was equivalently formed by using gas source molecular beam epitaxy grown InAs/In

0.53

0.47

digital alloy and the pseudomorphic growth was conﬁ rmed by the X-ray diffraction measurements.

Lasing at 2.30 μm above 330 K under continuous wave operation has been achieved for the laser with

four 13 nm quantum wells. By increasing the well width to 19 nm, the continuous wave wavelength has

been extended to 2.44 μm at 290 K, whereas the epitaxial quality and laser performances are

deteriorated. For those lasers with well width up to 19 nm, the moderate reduction of the quantum

well numbers can restrict the strain accumulation and improve the laser performances. Continuous wave

lasing at 2.38 μm above 300 K has been achieved.

1. Introduction

Semiconductor laser diodes emitting in 2–2.5 mm wavelength

range are very attractive for free space communications and light

detection and ranging (LIDAR) due to the low absorption by

atmospheric water molecules in this range [1]. Such devices are

also of great interests in atmospheric pollution monitoring and

medical diagnostics by tunable diode laser absorption spectro-

scopy (TDLAS) gas sensing [2]. Furthermore, it is also desired for

the characterization and evaluation of photodetectors and focal

plane arrays operating in this wavelength range, because wave-

length match is very important to determine their actual features

[3]. Compressively strained type-I InGaAs quantum well (QW)

lasers on InP substrate offer an attractive alternative to traditional

GaSb-based structures for semiconductor lasers in this wavelength

range. The emission wavelength can be tailored by the indium

composition and well width of InGaAs QWs, and the main obstacle

is how to control the signiﬁcant strain and keep good structural

quality in the QWs when increasing the indium contents [4,5].To

improve the material quality, several methods have been applied,

such as growing the QWs at a relatively low temperature [6],

applying a relatively high growth rate [7], and using surfactant [8].

By using 5 nm thick pure InAs in the QWs, lasers extended to

2.33 μm have been demonstrated under continuous wave (CW)

operation at room temperature (RT) [9,10]. On the other hand, the

use of triangular QW instead of rectangular one can increase the

lasing wavelength while keeping the same strain extent [11,12].

The triangular QW can be grown by digital alloy technology, which

is very effective to restrain the formation of three dimensional

growth in the strained QW thus improve the laser performances

[13,14]. By this approach, the InAs/InGaAs triangular QW lasers on

InP substrate with wavelength up to 2.4 mm have been reported

recently [15]. To control the strain in the QW, the QW structures,

especially the well widths and numbers, play a very crucial role.

In this work, InAs/InGaAs triangular QW lasers with different

well widths and well numbers were demonstrated and investi-

gated in detail. The well widths were changed to tailor the

wavelength, and the well numbers were adjusted to optimize

the laser performances.

2. Experiments

The epitaxial laser wafers were all grown on n-type (0 01)-

oriented InP epi-ready substrates in a VG Semicon V80H gas

source molecular beam epitaxy (GSMBE) system. The elemental

indium, gallium and aluminum were used as group III sources,

while As

and P

cracked from Arsine and phosphine were used as

group V sources. The InP substrates were at ﬁrst heated to about

500 1C measured by thermocouple under P

ﬂux to carry out the

surface oxide desorption and then reduced to 440 1C for growth.

Contents lists available at ScienceDirect

journal homepage: www.elsevier. com/locate/jcrysgro

Journal of Crystal Growth

http://dx.doi.org/10.1016/j.jcrysgro.2015.02.091

Corresponding author. Tel.: þ 86 21 62511070; fax: þ 86 21 52419931.

E-mail address: ygzhang@mail.sim.ac.cn (Y.G. Zhang).

Journal of Crystal Growth 425 (2015) 376–380

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