温度对Er3+掺杂Gd2SiO5晶体4I13/2态发射光谱和荧光寿命的影响
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"该研究详细探讨了温度对Er3+掺杂Gd2SiO5晶体中4I13/2能级发射光谱和荧光寿命的影响。通过在不同温度下测量这些参数，发现随着温度升高，4I13/2到4I15/2跃迁的发射线宽变宽，主要的发射峰位于1596纳米、1609纳米和1644纳米，这些峰值向短波方向移动。4I13/2状态的荧光寿命从13.2毫秒减少。"
在Er3+离子掺杂的Gd2SiO5晶体中，4I13/2能级是一个关键的激发态，它在激光和光学存储等应用中起着重要作用。温度对其性能的影响是理解和优化这些应用的关键因素。本研究中，科学家们系统地研究了温度变化如何影响这一能级的光谱特性和荧光寿命。
首先，当温度增加时，4I13/2到4I15/2的发射线宽增宽，这可能是因为热激发导致的非辐射退激发过程增强，或者是由于晶格振动（声子）的增加使得能量转移更加频繁，从而增加了发射线的宽度。此外，主要发射峰的蓝移表明，随着温度上升，Er3+离子的能级结构发生了微小变化，可能是由于晶格热膨胀或离子与晶格相互作用的改变。
其次，4I13/2状态的荧光寿命减小，这通常与温度相关的非辐射衰减过程的增加有关。例如，热辅助的声子辅助非辐射跃迁可能导致寿命缩短。在较高温度下，Er3+离子与晶格的相互作用增强，使得能量更快地通过晶格散失，而不是以荧光形式发射出去。
Er3+掺杂的Gd2SiO5晶体因其独特的光谱特性，常被用于光纤通信和激光器中的 erbium-doped fiber amplifiers (EDFAs)。温度依赖性的研究对于理解在实际工作环境中如何维持和优化其性能至关重要。例如，在高温环境或需要精确温度控制的应用中，这些发现可以帮助设计更有效的冷却系统或选择最佳工作温度，以提高器件的效率和稳定性。
该研究揭示了温度对Er3+掺杂Gd2SiO5晶体中4I13/2能级的重要影响，提供了深入理解这种材料在光电子领域潜在应用的基础。这对于开发高性能的光学器件，如激光器和光纤放大器，具有重要意义，并为未来的研究提供了重要的理论依据。
COL 9(9), 091602(2011) CHINESE OPTICS LETTERS Septemb er 10, 2011
Temperature effect on emission spectra and fluorescence
lifetime of the
4
I
13/2
state of Er
3+
-doped Gd
2
SiO
5
crystal
Yuchong Ding (丁丁丁雨雨雨憧憧憧)
1,2
, Guangjun Zhao (赵赵赵广广广军军军)
1∗
, Yosuke Nakai
3
, and Taiju Tsuboi
3
1
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, Shanghai 201800, China
2
Graduate University of Chinese Academy of Sciences, Beijing 100039, China
3
Faculty of Engineering, Kyoto Sangyo University, Kamigamo, Kita-ku, Kyoto 603-8555, Japan
∗
Corresp onding author: zhaoguangjun@163.net
Received February 16, 2011; accepted April 4, 2011; posted online June 21, 2011
By measuring the emission spectra and the fluorescence lifetime of the
4
I
13/2
state of Er
3+
ions in Gd
2
SiO
5
crystal at different temperatures, the effects of temp erature on the spectra and the lifetime of the
4
I
13/2
state are investigated. When the temperature increases, the emission line width for the
4
I
13/2
→
4
I
15/2
transition is broadened, and the main emission lines at 1 596, 1 609, and 1 644 nm shifte toward shorter
wavelengths. The measured lifetime of the
4
I
13/2
state decreases from 13.2 to 8.4 ms with temperature
increase from 13 to 300 K, which is mainly due to the temperature dependence of multiphonon relaxation
b etween the
4
I
13/2
and
4
I
15/2
states and the changing population distribution among the Stark levels within
the
4
I
13/2
state. The experimental results imply that low temp erature condition is better for the ∼1.6-µm
laser output.
OCIS codes: 160.3380, 300.6280, 160.5690
doi: 10.3788/COL201109.091602.
Recently, with the development of high-power InP laser
diode and erbium fiber laser (EFL) in the 1.46−1.6-µm
range
[1,2]
, Er
3+
-doped Gd
2
SiO
5
crystal is considered to
be an interesting material to obtain ∼1.6-µm eyesafe laser
based on the resonantly pumping sketch
[3]
. Compared
with the well-known Er
3+
:YAG crystal, Er
3+
: Gd
2
SiO
5
is anisotropic with monoclinic structure, belonging to the
space group P
21/c
[4]
, which means that it can be directly
used to obtain polarized laser.
In the past several years, studies have been dedi-
cated to the growth and spectroscopic characterization
of Er
3+
:Gd
2
SiO
5
, and some primary data are already
available
[5−7]
. However, such data are not sufficient
to predict laser performance, especially under different
temperature conditions. Generally, increasing the tem-
perature will result in thermal broadening and shift in
the laser line, which have a significant meaning for the
laser action since these effects are closely related to the
light amplification gain, output frequency stability, and
thermal tenability of the laser. The variation of fluores-
cent lifetime with the temperature is also significantly
important for many Q-switched and other operations of
Er
3+
: Gd
2
SiO
5
lasers. In this letter, the emission spec-
tra of Er
3+
:Gd
2
SiO
5
at 13−300 K are measured, and the
temperature dependence of the fluorescence lifetime for
the
4
I
13/2
→
4
I
15/2
transition of Er
3+
ions in this host
has been studied.
Single crystals of Er
3+
:Gd
2
SiO
5
were grown from irid-
ium crucible by Czochralski technique. The highly pure
oxide powders Gd
2
O
3
(99.999%), SiO
2
(99.999%), and
Er
2
O
3
(99.999%) were used as the starting materials,
while the concentration of Er
3+
ions in the melt was
0.3 at.-%. The seed was of <010> orientation and the
whole growth atmosphere was high-purity nitrogen gas.
The comparison of 2θ diffraction peak values and their
corresponding relative intensity with the standard χ-
ray diffraction (XRD) card of Gd
2
SiO
5
indicates that
the formation of the monoclinic structure of Gd
2
SiO
5
was achieved in the Er
3+
:Gd
2
SiO
5
crystal that we have
grown. The optical quality of the crystals was found to
be good, as shown in Fig. 1. During the crystal growth of
Er
3+
:Gd
2
SiO
5
, the substitution of Gd
3+
by Er
3+
was ac-
complished easily because the dimensional, chemical, and
physical properties of the two ions are quite similar. The
sample used for spectroscopic measurements was opti-
cally polished, and the thickness of the sample was 1 mm.
The absorption spectrum of Er
3+
:Gd
2
SiO
5
was mea-
sured at 300 K by using a spectrophotometer (Lambda
900, Perkin-Elmer, USA). The emission spectra were
measured with a spectrophotometer (Spex Fluorolog-3,
Horiba, Japan) and were excited at 378 nm by a 450-W
xenon lamp. The emission decay curves were obtained
by pulse excitation with the 980-nm line of a diode laser.
The emitting line of 1.528 µm for the
4
I
13/2
manifold of
Er
3+
:Gd
2
SiO
5
was detected through a 0.5-m monochro-
mator with a photomultiplier. For the low temperature
measurements, the Er
3+
:Gd
2
SiO
5
sample was cooled by
a liquid-nitrogen cryogenic refrigerator, capable of con-
trolling temperature from 13 to 300 K. For all the mea-
surements, the spectral resolution was kept below 1 nm.
Fig. 1. Photo of as-grown Er
3+
:Gd
2
SiO
5
single crystal with
size of Φ35×40 (mm).
1671-7694/2011/091602(4) 091602-1
c
° 2011 Chinese Optics Letters
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