PtSe2/Si纳米线阵列异质结：超快灵敏多波段光电探测器

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"这篇研究论文详细介绍了基于 PtSe2（铂碲化物）/硅纳米线阵列异质结的超快灵敏光电探测器，该设备具有从200到1550纳米的宽光谱响应范围。作者们通过简单的硒化方法成功制备了大面积、均匀且垂直生长的PtSe2薄膜，并将其与硅纳米线阵列结合，构建出高性能的光电探测器。该探测器表现出优异的光响应性，其光响应率为12.65 A/W，特定探测度达到2.5×1013 Jones，在-5伏电压下工作，上升/下降时间为10.1/19.5微秒。" 在这篇研究中，主要的知识点包括： 1. **过渡金属二硫属化物(TMDs)**：PtSe2 属于一类新兴的过渡金属二硫属化物，具有高载流子迁移率、可调的能带结构以及出色的稳定性，这使得它们在微电子和光电子器件中有巨大的应用潜力。 2. **PtSe2 薄膜的制备**：研究人员通过硒化方法成功制备了大面积且垂直生长的 PtSe2 薄膜。这种简单的方法对于大规模生产具有重要意义。 3. **硅纳米线阵列**：硅纳米线阵列是构建高效光电探测器的重要组成部分，其独特的结构可以增加界面面积，提高光吸收效率，从而提升光电性能。 4. **异质结结构**：PtSe2 与硅纳米线阵列形成的异质结是实现超快灵敏光电探测器的关键。异质结能有效分离光生载流子，减少重组损失，提高探测器性能。 5. **光电性能指标**：文章报道的探测器具有良好的光响应性（12.65 A/W），这意味着在光照下每单位功率产生的电流大；同时，其特定探测度高达2.5×1013 Jones，表示在弱光环境下仍能有很好的检测能力。此外，快速的上升/下降时间（10.1/19.5微秒）表明该设备在响应速度上也非常出色。 6. **光谱响应范围**：从200到1550纳米的宽光谱响应覆盖了紫外光到近红外光，这意味着该探测器在多种应用场景中都有广阔的应用前景，如光通信、光学成像和环境监测等。 7. **实际应用**：由于其超快响应时间和宽光谱响应，这种光电探测器可能被用于高速光通信系统、光谱分析和多波段成像等领域，对提升设备性能和拓宽应用领域具有重大意义。这项研究展示了 PtSe2 在光电子领域的巨大潜力，并为开发新型高性能光电探测器提供了新的思路和材料基础。

spectrophotometer (UH4150, Hitachi, Japan). Raman

spectra measurements were carried out on a HORIBA

Raman spectrometer with a 488 nm argon ion laser. The

X-ray diffraction (XRD) pattern was recorded using a

RigakuSmartLab X-ray diffractometer. The Pt 4f and Se

3d core levels were recorded by X-ray photoemission

spectroscopy (XPS), which was performed on a VG

ESCALAB 220i-XL analysis system equipped with a

monochromatic Al X-ray (1486.6 eV) source. The mor-

phology of the as-prepared SiNWA sample was observed

by scanning electron microscopy (SEM, JEOL Model

JSM-6490). The morphology, crystal structure and che-

mical composition of PtSe

were investigated using a ﬁeld

emission transmission electron microscope (TEM, JEOL

Model JEM-2100F) equipped with an energy-dispersive

spectrometer (EDS). The optoelectronic characterization

of the devices was performed using a semiconductor

parameter analyzer system (Keithley 4200-SCS) at room

temperature, and a laser diode (780 nm) was used as the

illumination source. To determine the spectral response

and time response of the heterojunction devices, a home-

built system composed of a light source (LE-SP-LS-XE), a

monochromator (LE-SP-M300), an oscilloscope (Tektronix,

TDS2012B) and an optical chopper (LE-oc120) was used.

Results and discussion

The crystal structure of PtSe

is similar to that of MoS

and is composed of one layer of Pt atoms sandwiched

between two layers of Se atoms, as determined from the

XRD pattern shown in Fig. 1a. All diffraction peaks at

16.78°, 32.87°, 44.32° and 56.25° can be indexed to the

(001), (101), (102) and (200) planes, respectively. XPS

characterization was also conducted on the PtSe

ﬁlms.

The peaks of the 4f

7/2

and 4f

5/2

core levels of Pt are

located at 73.35 and 76.65 eV, respectively, and the 3d

5/2

and 3d

3/2

core levels of Se are observed at 54.65 and 55.45

eV (Fig. 1b, c)

. The typical Raman spectrum of the PtSe

ﬁlm excited by 488 nm light shown in Fig. 1d contains

two main peaks at approximately 175.7 and 204.5 cm

−1

which are assigned to the E

in-plane and A

out-of-

plane vibration modes, respectively; these results indicate

that PtSe

has a similar crystal structure as other MX

compounds based on comparison with the Raman bands

of other MX

species

. The coverage of the ﬁlm grown by

simple selenization is scalable and controllable even for

2D materials according to previous reports

. As shown

in Fig. 1e, the SiO

/Si substrate with a size of approxi-

mately 12 × 12 mm was covered uniformly by the PtSe

ﬁlm. To measure the uniformity of the ﬁlm, seven spots

randomly distributed on the ﬁlm were analyzed by Raman

spectroscopy, as shown in Fig. 1f. All spots showed the

same two characteristic peaks of PtSe

with similar pro-

ﬁles and intensities, revealing the homogeneous growth of

PtSe

on the wafer with a size of more than a centimeter.

Figure 2a illustrates the device structure of the PtSe

SiNWA heterojunction photodetector. The SEM image of

Fig. 1 Characterization of the PtSe

ﬁlms. a XRD pattern of the as-grown PtSe

ﬁlm. XPS spectrum of b the Pt 4f core level and c the Se 3d core

level. d Raman spectrum of the PtSe

thin ﬁlm. e Photograph of a 12 × 12 mm SiO

/Si substrate covered with the PtSe

ﬁlm. f Raman spectra of seven

random spots on the ﬁlm surface

Zeng et al. NPG Asia Materials (2018) 10: 352-362 354

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