通过线去嵌技术的新解析

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"on-wafer去嵌方法论文" 在微波理论和技术领域，去嵌（Deembedding）是一项关键的技术，特别是在芯片上的测量过程中。本文主要探讨了一种新的通过线（Through-Line, TL）去嵌方法，该方法特别关注了基板集成波导（Substrate-Integrated Waveguide, SIW）的应用。去嵌的主要目的是从测量数据中分离出设备的真实特性，消除测试夹具或过渡段对测量结果的影响。传统的去嵌方法通常需要一对相同的过渡段（transitions）的参数，这些参数可以通过通过线（through）和均匀线（uniform line）的去嵌标准来获取。然而，还有一些其他的方法引入了标度因子来调整特征向量，从而得到过渡段的两端口参数。本文揭示了这些标度因子实际上是相互依赖的，并且它们可以提供一种校正参考平面的调整功能。这表明，这些因子不仅仅是简单的比例关系，而是与参考平面的位置紧密关联。进一步地，文章提出，过渡段的波传输矩阵可以分解为两个波传输矩阵，其中一个矩阵包含了过渡不连续性的影响，而另一个则对应于匹配线路。这种分解方法允许我们利用第二个匹配线路标准的数据来实现预期和校正的参考平面位移。这意味着，通过对矩阵的分解和重组，我们可以更精确地控制和校正测量中的参考平面位置，从而提高去嵌的精度。在实际应用中，特别是对于SIW这样的微波结构，这种方法的优势在于能够更准确地表征和去除测试结构对器件性能的影响。作者Kimberley W. Eccleston（IEEE资深会员）通过详尽的分析和验证，证明了这种方法的有效性和实用性。文章指出，这种方法不仅适用于SIW，也有可能推广到其他类型的微波和毫米波组件。这篇被接受发表在《IEEE Transactions on Microwave Theory and Techniques》期刊的文章，为微波和射频工程师提供了一种新的、更精确的去嵌工具，有助于改善芯片上器件测量的准确性，尤其是在处理具有复杂参考平面问题的高频率系统时。通过深入理解并应用文中提出的TL去嵌方法，可以提高设计和测试阶段的效率，减少误差，从而推动微波技术的发展。

This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1

A New Interpretation of Through-Line Deembedding

Kimberley W. Eccleston, Senior Member, IEEE

Abstract—Deembedding a device mounted between a pair of

identical transitions requires the transition two-port parameters.

These can be obtained using the through-line (TL) deembedding

method requiring only through and uniform line deembedding

standards. Other related deembedding methods introduce factors

to scale a pair of eigenvectors to obtain the transition two-

port parameters. In this paper, it is shown that these scaling

factors are interdependent and provide a corrective reference

plane adjustment. Moreover, the transition wave-transmission

matrix can be factored into two wave-transmission matrices with

one encapsulating the transition discontinuity and the other of

a matched line to provide a corrective reference plane shift.

This factorization permits incorporation of desired and corrective

reference plane shifts, using data from a second matched line

standard. With an emphasis on substrate-integrated waveguide,

the proposed TL deembedding method is veriﬁed.

Index Terms—Deembedding, substrate-integrated wave-

guide (SIW), through-line (TL) deembedding, through-reﬂect-

line (TRL) deembedding.

I. INTRODUCTION

MEASUREMENT environment supports precise S-para-

meter measurement to a coaxial reference plane, and

electromagnetic simulation environments often restrict exci-

tation to microstrip or circuit-type ports. This means, for

example, that a transition from coaxial cable to microstrip

is required to measure transistors [1]–[3], or microstrip or

coplanar-waveguide to substrate-integrated waveguide (SIW)

transitions are required when simulating and measuring SIW

devices [4]–[6]. For a well-designed 50- microstrip test

ﬁxture, the main effect of the transition is a shift of reference

planes. At the other extreme, transitions to SIW have a

profound impact on the SIW device S-parameters [7], [8].

By a process called deembedding, the effects of the

transition are removed to obtain the S-parameters of the

device-under-test (DUT), which requires two-port models of

the transitions. Obtaining this model is challenging as one

of the transition ports is inaccessible for excitation in a

simulation [9] or direct measurement. Instead, the model is

extracted from data acquired from simulation or measurement

of various conﬁgurations of known, or partially known, devices

in place of the DUT, denoted the deembedding standards.

Through-reﬂect-line (TRL) [10] is a well-known and com-

monly used method that uses three deembedding standards:

Manuscript received May 14, 2016; revised September 2, 2016; accepted

September 4, 2016.

The author was with the Department of Electrical and Computer Engi-

neering, University of Canterbury, Christchurch 8140, New Zealand. He is

now with Lincoln Agritech Ltd., Lincoln 7640, New Zealand (e-mail:

dr.kimberley.eccleston@ieee.org).

Color versions of one or more of the ﬁgures in this paper are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/TMTT.2016.2607744

1) through connection; 2) uniform line of known length; and

3) reﬂective termination. For wideband deembedding, multiple

line standards can be used [11]–[13]. TRL has been extended

to characterize multimode devices [14] including differential-

mode devices [15], [16]. For identical transitions, the transition

model can be obtained using only the through and line stan-

dards [16]–[19]. Moreover, the information gained from the

TRL reﬂective standard can be synthesized from the through

and line data [19]. By eliminating the reﬂective standard,

simulation time is reduced, and measurement repeatability

errors associated with another standard can be eliminated.

Furthermore, the simulation of short or open circuits in FDTD

is difﬁcult [17].

Using matrix methods, an eigenvalue problem can be for-

mulated for the through and line conﬁgurations [11], [12],

[14]–[18], [20]. The eigenvalues directly give the propagation

constant of the line, and the transition two-port parameters

are related to the eigenvectors. In many situations, the propa-

gation constant is a byproduct, but is useful, for example, in

propagation investigations of SIW [21]–[28], in which case

only the through and line standards are required. On the

other hand, eigenvectors by their nature have arbitrary mag-

nitude and phase and must be adjusted to uniquely deter-

mine the transition model. This usually requires data from

the reﬂective standard along with part of the original TRL

technique [11], [12], [20] or other formulation [14]–[16].

For matrix formulations, seemingly independent factors are

introduced to scale the eigenvectors [14]–[18], [20].

In this paper, the through-line (TL) deembedding method

is derived from an alternative pathway that gives rise to a

physical interpretation, which requires interdependence the

eigenvector scaling factors. Moreover, the wave-transmission

matrix of the transition can be factored into two wave-

transmission matrices: one encapsulating the discontinuity and

the other of a matched line to provide a corrective reference

plane shift established using the through standard. With this

formulation, the corrective shift can be consolidated with a

desired shift using a second line standard. It is not necessary

to know the lengths of the line standards.

Section II develops the theory of the proposed deembedding

method. Section III applies it to SIW measurement. This paper

is conﬁned to single mode operation, identical transitions, and

a bandwidth constrained by a single pair of through and line

standards.

II. TL D

EEMBEDDING THEORY

Fig. 1 shows the block diagram to represent the DUT

embedded between a pair of transitions. The DUT and transi-

tions are represented by two-port networks with the port num-

bering as indicated. Measured or simulated two-port parameter

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

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