CdS/Si纳米异质结阵列的光伏效应研究
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CdS/Si纳米异质结阵列的光伏效应
CdS/Si纳米异质结阵列是一种新型的纳米材料，它可以提高太阳能电池的性能。该材料由CdS薄膜和Si纳米柱阵列组成，通过化学浴沉积法制备。CdS/Si纳米异质结阵列具有强的宽带抗反射性能，在200-1000nm波长范围内的平均反射率小于7%。在1 sun air mass (AM) 1.5 G照明下，CdS/Si纳米异质结阵列表现出明显的光伏效应。
光伏效应是指材料在光照下产生电压和电流的现象。CdS/Si纳米异质结阵列的光伏效应可以归因于CdS薄膜和Si纳米柱阵列之间的异质结。异质结是指两个不同的半导体材料之间的接口，具有不同的能带结构。在CdS/Si纳米异质结阵列中，CdS薄膜和Si纳米柱阵列之间的异质结可以增强光伏效应。
CdS/Si纳米异质结阵列的制备过程中，化学浴沉积法是一种关键的步骤。该方法可以控制CdS薄膜的厚度和morphology，从而影响CdS/Si纳米异质结阵列的光伏性能。实验结果表明，CdS/Si纳米异质结阵列的光伏效应随着CdS薄膜的厚度的增加而增强。
CdS/Si纳米异质结阵列的应用前景广阔，可以用于高效太阳能电池的组装。太阳能电池是当前最为重要的可再生能源之一，能够将太阳能转换为电能。CdS/Si纳米异质结阵列的应用可以提高太阳能电池的效率，从而提高可再生能源的供给能力。
此外，CdS/Si纳米异质结阵列也可以用于其他光电子器件的组装，如光检测器、光开关等。这些器件可以应用于各个领域，如通讯、医疗、国防等。
CdS/Si纳米异质结阵列是一种具有强光伏效应的新型纳米材料，具有广阔的应用前景。该材料的研究和应用将为人类社会的可持续发展做出贡献。
知识点：
1. CdS/Si纳米异质结阵列是一种新型的纳米材料，可以提高太阳能电池的性能。
2. CdS/Si纳米异质结阵列具有强的宽带抗反射性能，在200-1000nm波长范围内的平均反射率小于7%。
3. CdS/Si纳米异质结阵列的光伏效应可以归因于CdS薄膜和Si纳米柱阵列之间的异质结。
4. CdS/Si纳米异质结阵列的制备过程中，化学浴沉积法是一种关键的步骤。
5. CdS/Si纳米异质结阵列可以用于高效太阳能电池的组装。
6. CdS/Si纳米异质结阵列也可以用于其他光电子器件的组装，如光检测器、光开关等。
7. CdS/Si纳米异质结阵列的研究和应用将为人类社会的可持续发展做出贡献。
Photovoltaic effect of CdS=Si nanoheterojunction array
Chuan He, Chang Bao Han, Yu Rui Xu, and Xin Jian Li
a)
Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou, 450052,
People’s Republic of China
(Received 26 August 2011; accepted 4 October 2011; published online 10 November 2011)
Nanostructured materials have attracted much attention for enhancing the performance of solar
cells due to their unique advantage of high light absorption. In this regard, here we propose a
CdS=Si nanoheterojunction array, called CdS=Si-NPA, for harvesting the energy of sunlight.
CdS=Si-NPA was obtained by depositing a continuous film of CdS onto silicon nanoporous pillar
array (Si-NPA) via a chemical bath deposition (CBD) method and the average reflectance of
CdS=Si-NPA was less than 7% in the wavelength range of 200–1000 nm. Under 1 sun air mass
(AM) 1.5 G illumination, CdS=Si-NPA exhibits an obvious photovoltaic effect. These results
indicate that CdS=Si-NPA has a strong broadband optical antireflection and might be a promising
candidate for the assembly of high efficiency solar cells.
V
C
2011 American Institute of Physics.
[doi:10.1063/1.3658814]
I. INTRODUCTION
Photovoltaic (PV) technology offers the most direct way
for solar-to-electric energy conversion to meet our high
demand for renewable clean energy. To compete with natural
fossil fuel sources, various nanostructured materials, such as
nanocrystallites,
1,2
nanowires,
3,4
nanorods,
5,6
and nanaopil-
lars,
7,8
have attracted much attention in developing low-cost
and high-efficiency solar cells in the past several years. Of
these, the use of nanostructured arrays and nanocrystallites
are of particular interest for their superior capability in optical
absorption
3,7
and multiple exciton generation,
9,10
respec-
tively. In the previous study, we have reported the preparation
of silicon nanoporous pillar array (Si-NPA), a unique silicon
hierarchical structure consisting of vertically aligned nanopo-
rous silicon pillars with the pore walls being the densely dis-
persed silicon nanocrystallites (nc-Si), and an average
integral diffuse reflectance less than 2% was obtained in the
wavelength range of 400–1000 nm.
11
Therefore, Si-NPA pos-
sesses both the benefits of nanostructured arrays and nano-
crystallites. A CdS=Si heterostructure based on Si-NPA
(CdS=Si-NPA) was prepared through a heterogeneous reac-
tion process,
12
and a three-primary-color photoluminescence
and an obvious rectification phenomenon were obtained.
12,13
In this letter, we propose a PV structure that consists of
Si-NPA as a light absorbing layer and a layer of CdS film
atop as a window layer. Here a chemical bath deposition
(CBD) process was chosen to deposit CdS on Si-NPA for its
capability in producing pinhole-free, adherent, and conformal
films over rough surfaces.
14,15
The as-proposed structure
exhibited an excellent broadband optical antireflection, which
is considered to be a major advantage for fabricating high ef-
ficiency solar cells, and an obvious PV effect observed indi-
cates that such a heterostructure might be a potential
nanosystem for developing new-concept solar cells.
II. EXPERIMENTAL
The silicon wafers used in this experiment were p-type,
(111) oriented single crystal silicon (sc-Si) wafers with a
resistivity of 0.0070.008 X cm. The initial sc-Si wafers
were cut into 1.0 cm by 1.0 cm pieces and cleaned using
the standard Radio Corporation of America (RCA) methods
afterwards. First, the piece was placed into an autoclave
(65 ml) filled with the hydrothermal solution, which was
prepared by dissolving 0.0022 mol analytical grade
Fe(NO
3
)
3
9H
2
O in 55 ml, 13 mol=l hydrofluoric acid aque-
ous solution. Next, the autoclave was sealed, put into a fur-
nace and kept at a temperature of 140
C for 50 min, then
cooled down to room temperature. Finally, the piece was
taken out and washed thoroughly with de-ionized water. As
can be seen, the gray sc-Si wafer turned dark black because
of the formation of Si-NPA on the surface; the structural
properties of Si-NPA have been described previously.
11
CdS thin films were deposited on Si-NPA by CBD tech-
nique. The solution was a mixture of CdCl
2
(0.3 mol=l),
(NH
2
)
2
CS (1 mol=l), NH
3
H
2
O (2.25 mol=l) and de-ionized
water. The temperature of the solution was fixed at 80
C
25 min for growing CdS films. As-deposited CdS thin films
were homogeneous, yellowish, and with good adherence to
the substrate. To obtain properly crystallized and stabilized
CdS, an annealing treatment was carried out at 500
Cin
high-purity argon atmosphere for 60 min. For carrying out
the electrical measurements, a layer of indium tin oxide
(ITO) and a layer of Ag were sputtered on the front side and
the back side of CdS=Si-NPA=sc-Si, respectively. The mate-
rials to be sputtered were 10 wt% SnO
2
-doped In
2
O
3
and
high-purity silver (99.999%).
The morphological and structural properties of Si-NPA
and CdS=Si-NPA were characterized by field emission scan-
ning electron microscopy (FE-SEM), x-ray diffraction
(XRD), and energy-dispersive spectrometry (EDS). The inte-
gral diffuse reflection spectra of CdS=Si-NPA were obtained
by a Shimadzu UV-3150 spectrophotometer equipped with
an integrating sphere using BaSO
4
as reference. The electrical
a)
Author to whom correspondence should be addressed. Electronic mail:
lixj@zzu.edu.cn.
0021-8979/2011/110(9)/094316/4/$30.00
V
C
2011 American Institute of Physics110, 094316-1
JOURNAL OF APPLIED PHYSICS 110, 094316 (2011)
Author complimentary copy. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp
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