LED显示屏技术：Mini-LED, Micro-LED与OLED的现状与前景
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“Mini-LED, Micro-LED, and OLED displays: present status and future perspectives”
本文是一篇关于微型LED（Micro-LED）、迷你LED（Mini-LED）和有机发光二极管（OLED）显示技术的综述文章，作者对这三种技术的现状和发展前景进行了深入分析。这篇综述于2020年由Huang等人发表在《Light: Science & Applications》杂志上，探讨了这些显示技术的关键特性、材料属性、设备结构和性能，并比较了它们在不同应用场景下的优缺点。
1. **显示技术概述**
- LCD（液晶显示器）和OLED显示器目前是主流的平面显示技术，广泛应用于电视、手机和电脑屏幕。
- Mini-LED和Micro-LED技术作为LCD技术的升级版，提升了动态范围，提供了更好的显示效果，特别是增强了在阳光下的可读性。
2. **材料属性与设备结构**
- Micro-LEDs和Mini-LEDs是无机半导体材料，具有高亮度、高效率和长寿命的特点。
- OLEDs则基于有机材料，可以实现自发光，因此无需背光模组，结构更轻薄，响应速度更快。
3. **性能比较**
- 动态范围：OLED显示技术在黑色表现和对比度上有显著优势，而mLED和μLED通过局部调光技术提高了动态范围。
- 能耗：Micro-LED和Mini-LED由于更高的能效，在亮度较高时，相比OLED可能有更低的能耗。
- 运动画面响应时间：OLED技术通常拥有更快的响应时间，适合观看动态画面。
- 适应性：Micro-LED和Mini-LED因为无机材料的特性，更适合制作成柔性或透明显示屏，而OLED在这方面也有一定优势。
4. **挑战与未来趋势**
- Micro-LED的巨量转移技术是当前面临的主要挑战之一，需要高效、精确地将微小的LED芯片转移到基板上。
- OLED技术面临的挑战包括寿命问题和蓝色像素的稳定性。
- Mini-LED作为过渡技术，已经广泛应用于高端LCD背光系统，改善LCD的显示质量。
5. **总结**
- "mLED, OLED, or μLED: who wins?" 这个问题没有绝对的答案，每种技术都有其适用场景和优势。随着技术的发展，三者将在不同的应用领域中找到自己的定位，共同推动显示技术的进步。
这篇综述为读者提供了一个全面了解当前显示技术发展状况的窗口，对于理解Mini-LED、Micro-LED和OLED之间的差异以及未来发展趋势具有重要价值。
T
D
and LED is:
V
DD min
¼ V
DS min
þ V
F
ð3Þ
where V
DD
is determined by the highest grey level and
remains unchanged at lower grey levels. Taking an instance in
Fig. 3, the operation current decreases from the highest grey
level(themiddlesolidblackcurve)toalowerone(thelowest
solid black curve). We can observe that the intersection of the
blue curve and the solid black curve is right-shifted, indicating
a decrease in V
F
and an increase in V
DS
. The intersection point
still dwells in the saturation region. The red curve in Fig. 3
depicts the I-V
F
characteristics of the μLED. We can see that
the behaviour of the μLED disp lay is the same as that of the
OLED display, except for a lower V
F
.
Notably, the V
F
values of the μLED chip are lower than
those of the OLED; this result is widely observed in the J-
V
F
characteristics. The relationship between the current
density of μLED (J
μLED
) and V
F
can be described by the
Shockley model
54,55
:
J
μLED
¼ J
s
e
V
F
=nV
T
1
ð4Þ
where J
s
, V
T
and n stand for the saturation current density,
the thermal voltage and the ideality factor, respectively. On
the other hand, because of the small intrinsic charge density
in organic materials, the current density of the OLED (J
OLED
)
is space-charge limited
16,17,56
. According to the space-charge-
limited-current (SCLC) model, the J-V
F
characteristic of
OLEDs follows the famous Mott-Gurney law
57
:
J
OLED
¼
9
8
ε
0
ε
r
μ
V
2
F
d
3
ð5Þ
Here, ε
0
is the vacuum permittivity, ε
r
is the relative
permittivity of the OLED material, and d is the distance
between the OLED electrodes. In Eq. (5), the free carrier
mobility (μ) is a function of the electric field (E = V
F
/d)
58
:
μ ¼ μ
0
e
0:89β
ffiffiffi
E
p
ð6Þ
where μ
0
is the carrier mobility at a zero electric field and
β is the Poole-Frenkel factor. Because of its much lower
mobility, the OLED exhibits a higher threshold voltage
and lower J-V
F
curve slope than the μLED, leading to a
higher operation voltage. Exemplary calculations are given
in the Supplementary Information.
From Eq. (1), we find that the power consumption
ratio between the TFT and LED is equal to V
DS
/V
F
.
From Fig. 3,thehighV
DS
/V
F
ratio indicates that the
TFT may not be an efficient driver for the mL ED/μLE D
displays. In the experiment, we also confirmed that
TFTs could consume more power than LED chips in an
mLED/μLED display. Later, in this section, we will
discuss how to reduce P
TFT
.
Apart from P
static
, the charge and discharge in C
s
and
the parasitic capacitance of data/scan lines in Fig. 2a
generate the dynamic power consumption (P
dyn
)
55
.
However, because P
dyn
is much smaller than P
static
, the
power evaluation in this part will only consider P
static
.
In a full-colour display, the driving voltage is deter-
mined by the following procedures: First, we determine V
F
and I for each RGB chip according to LED L-I-V char-
acteristics and panel specifications. Next, we adopt the
proper TFT type and W
T
/L
T
value to provide the required
I with a reasonable V
DS_min
(Eq. (2)) and V
DD_min
(Eq. (3)).
Last, because the j = R, G, B subpixels are integrated in a
single panel, the common voltage (V
DD,W
)is
V
DD;W
¼ maxðV
DD min;j
Þð7Þ
Apart from the power consumption on each subpixel, in
AM panels, scan drivers and source drivers are employed for
updating the driving current of the emissive device, as Fig. 4a
Power source
Source driver
Timing
controller
Scan driver
Scan driver
Active matrix
pixel array
Control
signal
ab
Power source
V
DD,W
+ (I
W
·R)
V
DD,W
+ (I
W
·R)
V
DD,W
+ 0.5(N – 1)N·(I
W
·R)
+ 2(I
W
·R)
V
DD,W
2·I
W
3·I
W
(N – 1)·I
W
N·I
W
I
W
Fig. 4 Illustration of V
DD
voltage drop. a System schematic of an AM panel. b Voltage drop on a V
DD
line
Huang et al. Light: Science & Applications (2020) 9:105 Page 4 of 16
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