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首页"AFORS-HET研究:氢化非晶硅/晶硅太阳能电池建模工程材料"
"AFORS-HET研究:氢化非晶硅/晶硅太阳能电池建模工程材料"
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更新于2023-11-24
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材料教材《AFORS-HET学习说明(588页)》是由Wilfried G.J.H.M. van Sark、Lars Korte和Francesco Roca等人编写的。该教材涵盖了非晶-晶质异质结硅太阳能电池的物理和技术知识。作者们分别来自荷兰的乌得勒支大学、德国的赫尔姆霍兹能源材料研究中心以及意大利国家新技术、能源和可持续经济发展机构。 该教材主要介绍了使用AFORS-HET软件对非晶硅/晶硅太阳能电池进行建模的相关理论和技术。AFORS-HET是一种用于太阳能电池的建模和仿真的软件,可以帮助工程师和研究人员分析不同结构和材料组合对太阳能电池性能的影响。 该教材的目标读者包括学生、研究人员和从事太阳能领域工作的技术人员。通过学习该教材,读者可以了解非晶-晶质异质结硅太阳能电池的基本原理、结构设计、光伏材料特性以及AFORS-HET软件的使用方法。 总的来说,该教材对研究非晶-晶质异质结硅太阳能电池的人员提供了全面而深入的知识,并且能够帮助他们掌握使用AFORS-HET软件进行建模与仿真的技能。
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XX List of Abbreviations, Units, and Signs
PC : planar conductance
PCD : photoconductance decay
PDS : photothermal deflection spectroscopy
PECVD : plasma enhanced chemical vapour deposition
pEDMR : pulsed electrically detected magnetic resonance
PERL : passivated emitter and rear locally diffused
PERT : passivated emitter rear totally diffused
PES : photoelectron spectroscopy
PESC : passivated emitter solar cell
PL : photoluminescence
PLD : pulsed laser deposition
PMMA : poly methyl methacrylate
pm-Si :H : polymorphous silicon
por-Si : porous silicon
PRECASH : point rear emitter crystalline/amorphous silicon
heterojunction
PS : photoyield spectroscopy
PV : photovoltaics
PVD : physical vapour deposition
QSSPC : quasi-steady-state photoconductance
RCA : radio corporation of america
RCPCD : resonance-coupled photoconductive decay
RE : rear emitter
RECASH : rear emitter crystalline/amorphous silicon
heterojunction
RF : radio frequency
RT : room temperature
SAF : Salpetersäure – Ammoniumfluorid – Flusssäure
(etch mixture of nitric acid, 70% HNO
3
, ammonia
fluoride, 40% NH
4
F, and hydrofluoric acid, 50% HF)
SC : semiconductor
SCR : space charge region
SDPC : spin dependent photoconductivity
SDT : spin dependent transport
SE : spectroscopic ellipsometry
SE : selective emitter
SEM : scanning electron microscopy
SHJ : crystalline silicon heterojunction
SlSF : Schwefelsäure – Salpetersäure - Flusssäure
(etch mixture of sulphuric acid, 96% H
2
SO
4
, nitric acid,
70% HNO
3
, and hydrofluoric acid, 50% HF)
SOD : spin-on dopant
SPM : sulphuric peroxide mixture
SPV : surface photovoltage
SR : spectral response
SRH : Shockley-Read-Hall
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List of Abbreviations, Units, and Signs XXI
TBAF : tetrabutylamonium hexafluorophosphate
TCO : transparent conductive oxide
TDS : thermal desorption spectroscopy
TE : texture etch
TFT : thin film transistor
TFT-LCD : thin film transistor-liquid crystal display
TH : trihydride
TLM : transfer length method
TR : transient
TRMC : transient microwave conduction
UNSW : University of New-South Wales
UPS : ultraviolet photoelectron spectroscopy
UU : Utrecht University
UV-NIR : ultraviolet-near infrared
UV-VIS : ultraviolet-visible
VB : valence band
VBM : valence band maximum
VHF : very high frequency
VFP : voltage filling pulse method
VIGS : virtual induced gap states
XPS : x-ray photoelectron spectroscopy
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W.G.J.H.M. van Sark et al. (Eds.): Physics & Tech. of Amorphous-Crystalline, EM, pp. 1–12.
springerlink.com © Springer-Verlag Berlin Heidelberg 2012
Chapter 1
Introduction – Physics and Technology of
Amorphous-Crystalline Heterostructure Silicon
Solar Cells
Wilfried van Sark
1
, Lars Korte
2
, and Francesco Roca
3
1
Utrecht University, Copernicus Institute, Science, Technology and Society,
Budapestlaan 6, 3584 CD Utrecht, The Netherlands
2
Helmholtz-Zentrum Berlin GmbH, Department Silicon Photovoltaics, Kekuléstraße 5,
D-12489 Berlin, Germany
3
ENEA - Agenzia Nazionale per le Nuove Tecnologie,
l'Energia e lo Sviluppo Economico Sostenibile - Unità Tecnologie Portici,
Localitá Granatello, P. le E. Fermi, 80055 Portici, Napoli, Italy
1.1 General Introduction
Although photovoltaic solar energy technology (PV) is not the sole answer to the
challenges posed by the ever-growing energy consumption worldwide, this renew-
able energy option can make an important contribution to the economy of each
country. According to the New Policies Scenario of the “World Energy Outlook
2010” published in November 2010 by the International Energy Agency (IEA) [1],
it is to be expected that the share of renewable energies in global energy produc-
tion increases threefold over the period 2008-2035, and that almost one third of
global electricity production will come from renewables by 2035, thus catching up
with coal. The “Solar Generation 6” report of the European Photovoltaic Industry
association published in October 2010 [2] predicts in its Solar Generation Para-
digm Shift Scenario that by 2050, PV could generate enough solar electricity to sa-
tisfy 21% of the world electricity needs, i.e. a total of up to 6750 TWh of solar PV
electricity in 2050, coming from an installed capacity of 4670 GW in 2050. This is
to be compared with 40 GW installed in the world at the end of 2010 [3].
After the first solar cell was demonstrated in silicon 55 years ago [4] the cost
has declined by a factor of nearly 200, and high-throughput mass-production com-
patible processes are omnipresent all over the globe. More than 90% of the current
production uses first generation PV wafer based crystalline Silicon (c-Si), a tech-
nology with the ability to continue to reduce its cost at its historic rate [5,6].
The direct production costs for crystalline silicon modules are expected to be
around 1
€
€ /Wp in 2013, below 0.75
€
€ /Wp in 2020 and lower in the long term, as
stated in the Strategic Research Agenda of the European Photovoltaic Technology
Platform [7].
![](https://csdnimg.cn/release/download_crawler_static/88180785/bg13.jpg)
2 W. van Sark, L. Korte, and F. Roca
However the challenge of developing photovoltaic technology to a cost-
competitive alternative for established fossil-fuel based energy sources remains
enormous and new cell concepts based on thin films of various types of organic
and inorganic materials are entering the market. Thin film silicon (TFS), cadmium
telluride (CdTe), copper indium selenide (CIS) generally are denoted as the
second generation of PV technologies and are currently considered a very interest-
ing market alternative to crystalline silicon. Advanced thin film approaches such
as dye-sensitized titanium oxide (TiO
2
) and blends of polythiophene and C
60
(P3HT:PCBM) [8] are showing fast progress. World-record solar cell efficiencies
are regularly updated, see e.g. [9], and some interesting initiatives related to their
industrialization and commercialization have recently been undertaken.
For large scale PV deployment in large power plants or in building integrated
applications it is a prerequisite that the performance of solar energy systems is en-
hanced by assuring low cost in production and long term reliability (>25 years).
This requires the following issues to be addressed: 1) increase of the efficiency of
solar irradiation conversion; 2) decrease of the amount of materials that are used,
while these materials should be durable, stable, and abundant on earth; and 3)
reduction of the manufacturing and installation cost.
The fantastic boom of thin film technology in recent years can suggest further
development on the medium to long term due to the application of innovative con-
cepts to conventional materials and developments of new classes of thin film
materials stemming from nanotechnologies, photonics, optical metamaterials,
plasmonics and new semiconducting organic and inorganic sciences, most of them
recognized as next (third) generation approaches.
On the other hand the growth of the PV industry is also requesting well proven
technology in order to sustain the emerging market; here, crystalline silicon has a
long history of ‘pulling rabbits out of the hat’ [5].
Today, the industry has reached a new level of scale that is mobilizing vast new
resources, enthusiasm, skills, and energy in order to reduce wafer thickness, en-
hance efficiency and improve processes related to substrate cleaning, junction re-
alization, surface passivation, contact realization. We see that PV’s historic price
reduction is a result from the combined effects of step-by-step evolutionary im-
provements in a wide variety of areas rather than one or two huge breakthroughs
[5,6]. For example, processes such as dry texturing, spray-on phosphorus doping
sources or impurity gettering have become standard, while last but not least ac-
tions related to increase the factory size and automation further lead to cost reduc-
tions (“economies of scale”).
In contrast, larger values of the conversion efficiency of PV technology have
been reached with the realization of sophisticated crystalline silicon (c-Si) cell
structures, involving numerous and very complicated steps. This approach inevita-
bly implies an increase of costs, which is not compatible with industrial production
requirements that demand simple, high-throughput and reproducible processes.
In order to realize reliable devices characterized by high efficiency and low
cost, an approach has been developed on the basis of amorphous/crystalline silicon
heterojunction solar cells (SHJ), which combines wafer and thin film technologies.
In this area impressive results were achieved by Sanyo Electric with the so called
a-Si/c-Si Heterojunction with Intrinsic Thin layer (HIT) solar cell [10,11]. This
technology showed excellent surface passivation (open circuit voltage (V
oc
) values
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1 Introduction – Physics and Technology 3
of around 730 mV) and the highest power conversion efficiency to date for a cell
size of 100.4 cm
2
: 23.0% was obtained [11].
1.2 Amorphous Crystalline Heterojunction Solar Cells
The design of the silicon hetero-junction solar cell is based on an emitter and back
surface field (BSF) that are produced by low temperature growth of ultra-thin
layers of amorphous silicon (a-Si:H) on both sides of a thin crystalline silicon
wafer-base, less than 200 µm in thickness, where electrons and holes are photoge-
nerated. The low temperature a-Si:H deposition lowers the thermal budget in the
production of the cell (see Fig. 1.1), and at the same time will allow for high-
throughput production machinery. Taken together, this can lead to a considerable
lowering of manufacturing costs thus opening opportunities for the production of
GWp/year manufacturing plants to sustain the booming PV market.
Shorter process time
400
600
800
1000
Process temperature (C°)
ARC
screen printing & firing
30’
0,5’
5’
p/n junction
formation
by PECVD
3’
10’
Time (min)
TCO
10’
Electrical
Contacts
p/n junction diffusion
screen printing &
annealing
10’
Lower temperature
200
0
Fig. 1.1 Authors’ estimated thermal budget and process time for the conventional c-Si tech-
nology (top curve) and SHJ technology (bottom curve).
The idea of making solar cells from silicon heterojunctions is a rather old one:
It was first published in 1974 by Walther Fuhs and coworkers from the University
of Marburg (Germany) [12]. However, it turned out that to realize the V
oc
poten-
tial > 700 mV inherent to the heterojunction concept, it is mandatory to include
additional, very thin (of the order of 10 nm) undoped – so called intrinsic – a-Si:H
buffer layers between the wafer and the doped (emitter or BSF) a-Si:H layers.
Briefly, the reason is that the defect density in a-Si:H increases strongly with
doping, and this leads to an increase in interface defect density at the a-Si:H/c-Si
junction, thus to enhanced recombination and a lower V
oc
. This finding is the es-
sence of a patent filed by Sanyo in 1991, which can be seen as the “core patent”
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