DDR4moduledatasheet - CSDN文库

DRAM

需积分: 17 21 浏览量更新于2023-03-16 评论收藏 1015KB PDF 举报

身份认证购VIP最低享 7 折!

领优惠券(最高得80元）

资源详情

资源评论

资源推荐

Samsung Memory DDR4 SDRAM

The new generation of high-performance, power-efficient memory

that delivers great reliability for enterprise applications

Brochure

100 % detection of random 1-to 2-bit errors

Provide greater reliability, availability and

serviceability (RAS)

DDR3 modules provided only one RAS feature, their error-

correcting code (ECC) capability. Compared to DDR3, Samsung

DDR4 provides more robust RAS features, such as Cyclic

Redundancy Check (CRC), Parity, Per DRAM Addressability and

Gear Down Mode.

Enhanced reliability and improved S/I for mission-critical

enterprise applications are directly attributable to Samsung

DDR4's significant advancements with the following RAS

features:

1. Cyclic Redundancy Check (CRC) for improved data

reliability

CRC is error-detecting code that detects accidental changes

to raw data of DRAM's DQ. CRC conrms 100% detection of

random 1- to 2-bit errors by enabling error detection capability

for data transfer.

2. On-chip parity detection for the integrity of Command/

Address

Parity for Command/Address (CMD/ADD) provides a method of

verifying the integrity of command and address transfers over a

link.

3. Per DRAM Addressability for enhanced signal integrity

Samsung DDR4 can control module components and enhance

signal integrity by controlling the ODT of Vref levels.

4. Gear Down Mode for improved signal integrity

DDR4 Gear Down Mode allows a high speed of DQ to be

maintained while decreasing the high speed of CMD/ADD.

Fault-tolerant, higher RAS systems supported

by DDR4 SDRAM can remain available for

considerably longer periods of time without

failure.

DDR3 DDR4

RAS feature comparison of DDR3 and DDR4 SDRAM

+CRC

For Reliability : DQ

For Reliability : CMD/ADD

Control

CLK 2N mode

For Better S/I : Vref setting

For Better S/I : High Speed

+Parity

+Per DRAM Addressability

+Gear Down Mode

0100

…

00 0100

…

001011

0100

…

00 0100

…

001

Brochure

Samsung DDR4 SDRAM

Manage a range of enterprise workloads with

greater reliability, doubled bandwidth and

reduced power consumption

Designed with advanced system circuit architecture, Samsung

DDR4 supports a wide range of server memory needs by

delivering higher performance and reduced power consumption

with increased reliability. By taking advantage of the advanced

features of Samsung DDR4, companies can achieve greater

performance at a lower TCO.

DDR3 and DDR4 Specifications and features comparison

Feature DDR3 DDR4

Component density, speed

512 Mb - 4 Gb 4 Gb - 16 Gb

0.8 – 1.6 Gbps 1.6 - 3.2 Gbps

Module density 1, 2, 4, 8, 16, 32 and 64 GB 8, 16, 32, 64 and 256 GB

Interface

Voltage(VDD, VDDQ, VPP) 1.5V, 1.5V, NA (1.35V, 1.35V, NA) 1.2 V, 1.2 V, 2.5 V

Vref External Vref (VDD, 2) Internal Vref (need training)

Data I/O Center Tab Termination (CTT) (34 ohm) POD (34 ohm)

CMD, ADDR I/O CTT CTT

Strobe Bi-dir, diff Bi-dir, diff

Core architecture

Number of banks 8 banks 16 banks (4-bank group)

Page size (X4, 8, 16) 1 KB, 1 KB, 2 KB 512 B, 1 KB, 2 KB

Number of prefetch 8 bits 8 bits

Added functions RESET, ZQ, Dynamic ODT

RESET, ZQ, Dynamic ODT, CRC,

Data Bus Inversion (DBI), Multiple preamble

Physical

Package type, balls

(X4, 8, X16)

78, 96 BGA 78, 96 BGA

DIMM type R, LR, U, SoDIMM R, 3DS R, LR, (ECC/nECC) U/SoDIMM

DIMM pins 240 (R, LR, U), 204 (So) 288 (R, LR, U), 260 (So)

Legal and additional information

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and

discovery, we are transforming the worlds of TVs, smartphones, tablets, PCs, cameras, home appliances, printers, LTE systems, medical devices,

semiconductors and LED solutions. We employ 307,000 people across 84 countries with annual sales of U.S $196 billion. To discover more, please

visit ofcial website at www.samsung.com

For more information

For more information about Samsung DDR4 SDRAM, visit www.samsung.com/semiconductor

ⓒ

Electronics Co. Ltd. Specifications and designs are subject to change without notice. Non-metric weights and

measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or

omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective

owners and are hereby recognized and acknowledged.

Samsung Electronics Co., Ltd.

(Maetan-dong) 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea

2015-07

本内容试读结束，登录后可阅读更多

下载后可阅读完整内容，剩余1页未读，立即下载

weixin_43753401

粉丝: 0
资源: 1

会员权益专享

DDR4 module datasheet

评论0

会员权益专享

最新资源

DDR4 module datasheet

评论0

DIGILENT官方指导手册（中文）_你的Nexys 4DDR第一个入门实验

LPDDR4 Standard

内存修改SPD工具

sodimm ddr4 datasheet

ddr3 datasheet

zynq ac7020 datasheet

hi3559 datasheet

jedec ddr4 data buffer (ddr4db01) specification

ddr4 dimm规范

RK3399Datasheet

DDR4 DDR4L LPDDR4

ddr4 260 sodimm 定义

dwc ddr4 phy

ddr4 sdram 规范

DDR4 sodimm规范

ddr4 dimm引脚定义

ddr2 ddr3 ddr4 区别

ddr4 sodimm尺寸

DDR4 1066E是什么意思

DDR4 3200 4800

会员权益专享

最新资源