Samsung Memory DDR4 SDRAM
The new generation of high-performance, power-efficient memory
that delivers great reliability for enterprise applications
Brochure
© 2015 Samsung Electronics Co.
Brochure
100 % detection of random 1-to 2-bit errors
5
Provide greater reliability, availability and
serviceability (RAS)
DDR3 modules provided only one RAS feature, their error-
correcting code (ECC) capability. Compared to DDR3, Samsung
DDR4 provides more robust RAS features, such as Cyclic
Redundancy Check (CRC), Parity, Per DRAM Addressability and
Gear Down Mode.
Enhanced reliability and improved S/I for mission-critical
enterprise applications are directly attributable to Samsung
DDR4's significant advancements with the following RAS
features:
1. Cyclic Redundancy Check (CRC) for improved data
reliability
CRC is error-detecting code that detects accidental changes
to raw data of DRAM's DQ. CRC conrms 100% detection of
random 1- to 2-bit errors by enabling error detection capability
for data transfer.
2. On-chip parity detection for the integrity of Command/
Address
Parity for Command/Address (CMD/ADD) provides a method of
verifying the integrity of command and address transfers over a
link.
3. Per DRAM Addressability for enhanced signal integrity
Samsung DDR4 can control module components and enhance
signal integrity by controlling the ODT of Vref levels.
4. Gear Down Mode for improved signal integrity
DDR4 Gear Down Mode allows a high speed of DQ to be
maintained while decreasing the high speed of CMD/ADD.
Fault-tolerant, higher RAS systems supported
by DDR4 SDRAM can remain available for
considerably longer periods of time without
failure.
DDR3 DDR4
RAS feature comparison of DDR3 and DDR4 SDRAM
+CRC
For Reliability : DQ
For Reliability : CMD/ADD
Control
CLK 2N mode
For Better S/I : Vref setting
For Better S/I : High Speed
+Parity
+Per DRAM Addressability
+Gear Down Mode
0100
…
00 0100
…
001011
0100
…
00 0100
…
001
Brochure
6
Samsung DDR4 SDRAM
Manage a range of enterprise workloads with
greater reliability, doubled bandwidth and
reduced power consumption
Designed with advanced system circuit architecture, Samsung
DDR4 supports a wide range of server memory needs by
delivering higher performance and reduced power consumption
with increased reliability. By taking advantage of the advanced
features of Samsung DDR4, companies can achieve greater
performance at a lower TCO.
DDR3 and DDR4 Specifications and features comparison
Feature DDR3 DDR4
Component density, speed
512 Mb - 4 Gb 4 Gb - 16 Gb
0.8 – 1.6 Gbps 1.6 - 3.2 Gbps
Module density 1, 2, 4, 8, 16, 32 and 64 GB 8, 16, 32, 64 and 256 GB
Interface
Voltage(VDD, VDDQ, VPP) 1.5V, 1.5V, NA (1.35V, 1.35V, NA) 1.2 V, 1.2 V, 2.5 V
Vref External Vref (VDD, 2) Internal Vref (need training)
Data I/O Center Tab Termination (CTT) (34 ohm) POD (34 ohm)
CMD, ADDR I/O CTT CTT
Strobe Bi-dir, diff Bi-dir, diff
Core architecture
Number of banks 8 banks 16 banks (4-bank group)
Page size (X4, 8, 16) 1 KB, 1 KB, 2 KB 512 B, 1 KB, 2 KB
Number of prefetch 8 bits 8 bits
Added functions RESET, ZQ, Dynamic ODT
RESET, ZQ, Dynamic ODT, CRC,
Data Bus Inversion (DBI), Multiple preamble
Physical
Package type, balls
(X4, 8, X16)
78, 96 BGA 78, 96 BGA
DIMM type R, LR, U, SoDIMM R, 3DS R, LR, (ECC/nECC) U/SoDIMM
DIMM pins 240 (R, LR, U), 204 (So) 288 (R, LR, U), 260 (So)
Legal and additional information
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and
discovery, we are transforming the worlds of TVs, smartphones, tablets, PCs, cameras, home appliances, printers, LTE systems, medical devices,
semiconductors and LED solutions. We employ 307,000 people across 84 countries with annual sales of U.S $196 billion. To discover more, please
visit ofcial website at www.samsung.com
For more information
For more information about Samsung DDR4 SDRAM, visit www.samsung.com/semiconductor
Copyright
ⓒ
2015 Samsung Electronics Co. Ltd. All rights reserved. Samsung is a registered trademark of Samsung
Electronics Co. Ltd. Specifications and designs are subject to change without notice. Non-metric weights and
measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or
omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective
owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
(Maetan-dong) 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea
2015-07
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