TLP5754
4
9.
9.
9.
9. Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Peak high-level output current
Peak low-level output current
Operating frequency
Symbol
I
F(ON)
V
F(OFF)
V
CC
I
OPH
I
OPL
f
Note
(Note 1)
(Note 2)
(Note 3)
Min
6
0
15
Typ.
Max
15
0.8
30
-4.0
+4.0
50
Unit
mA
V
A
kHz
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (1 µF) should be connected between pin 6 (V
CC
) and pin 4 (GND) to stabilize the operation
of a high-gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor
should be placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5 µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note 3: Exponential waveform. I
OPH
≥ -4.0 A (≤ 90 ns), I
OPL
≤ 4.0 A (≤ 90 ns), T
a
= 110
10.
10.
10.
10. Electrical Characteristics (Note) (Unless otherwise specified, T
Electrical Characteristics (Note) (Unless otherwise specified, T
Electrical Characteristics (Note) (Unless otherwise specified, T
Electrical Characteristics (Note) (Unless otherwise specified, T
a
a
a
a
= -40 to 110
= -40 to 110
= -40 to 110
= -40 to 110
)
)
)
)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Peak high-level output current
Peak low-level output current
High-level output voltage
Low-level output voltage
High-level supply current
Low-level supply current
Threshold input current (L/H)
Threshold input voltage (H/L)
Supply voltage
UVLO threshold voltage
UVLO hysteresis
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
I
OPH
I
OPL
V
OH
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
V
CC
V
UVLO+
V
UVLO-
UVLO
HYS
Note
(Note 1)
(Note 1)
Test
Circuit
Fig.
13.1.1
Fig.
13.1.2
Fig.
13.1.3
Fig.
13.1.4
Fig.
13.1.5
Fig.
13.1.6
Test Condition
I
F
= 10 mA, T
a
= 25
I
F
= 10 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
I
F
= 5 mA, V
CC
= 30 V,
V
6-5
= -3.5 V
I
F
= 5 mA, V
CC
= 15 V,
V
6-5
= -7 V
I
F
= 0 mA, V
CC
= 30 V,
V
5-4
= 2.5 V
I
F
= 0 mA, V
CC
= 15 V,
V
5-4
= 7 V
I
F
= 4 mA, V
CC
= 15 V, I
O
= -100 mA
V
F
= 0.8 V, V
CC
= 15 V, I
O
=
100 mA
I
F
= 10 mA, V
CC
= 30 V,
V
O
= Open
I
F
= 0 mA, V
CC
= 30 V,
V
O
= Open
V
CC
= 15 V, V
O
> 1 V
V
CC
= 15 V, V
O
< 1 V
I
F
= 5 mA, V
O
> 2.5 V
I
F
= 5 mA, V
O
< 2.5 V
Min
1.45
1.2
3.0
14.7
0.8
15
12.1
11.1
Typ.
1.55
-1.8
60
14.9
0.07
1.8
1.7
1.4
12.7
11.7
1.0
Max
1.70
10
-1.2
-3.0
0.2
3.0
3.0
4
30
13.5
12.4
Unit
V
mV/
µA
pF
A
V
mA
V
Note: All typical values are at T
a
= 25 .
Note: This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.
Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.
Note 1: I
O
application time ≤ 50 µs; single pulse.
2019-12-22
Rev.9.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
9. 推荐操作条件(注)
推荐操作条件(注)
推荐操作条件(注)
推荐操作条件(注)
输入通态电流
输入断态电压
电源电压
峰值高电平输出电流
峰值低电平输出电流
工作频率
(注1)
(注2)
(注3)
推荐的操作条件是作为获得设备预期性能所必需的设计指南。每个参数是一个独立的值。在使用本设备进行系统设
计时,还应考虑本数据表中规定的电气特性。
在引脚6 (V
CC
和引脚4 (GND)之间应连接一个陶瓷电容(1µF),以稳定高增益线性放大器的工作。否则,该光电耦合器
可能无法正常切换。旁路电容应放置在每个引脚1厘米内。
注1:输入通流的上升和下降时间应小于0.5µs。注2:为工作范围,非推荐工作条件。注3:指数波
形。I
OPH
≥-4.0(≤90 ns), I
OPL
≤4.0(≤90 ns), T
a
= 110
10. 电气特性(注)(除非另有说明,T
电气特性(注)(除非另有说明,T
电气特性(注)(除非另有说明,T
电气特性(注)(除非另有规定, T
a a a
a
= -40至110
= -40到110
= -40到110
= -40 ~ 110
输入正向电压
输入正向电压温度系数
输入反向电流
输入电容
峰值高电平输出电流
峰值低电平输出电流
高电平输出电压
低输出电压
高电压电流
低电源电流
阈值输入电流(L/H)
阈值输入电压(H/L)
电源电压
UVLO阈值电压
UVLO滞后
(注1)
(注1)
测试
电路
测试条件
I
F
= 10毫安, T
a
= 25毫安
I
F
= 10毫安
V
R
= 5 v, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
I
F
= 5ma, V
CC
= 30v,
V
6-5
= -3.5 V
I
F
= 5ma, V
CC
= 15v,
V
6-5
= - 7v
I
F
= 0 mA, V
CC
= 30 V
,V
5-4
= 2.5 V
I
F
= 0 mA, V
CC
= 15 V
,V
5-4
= 7 V
I
F
= 4 mA, V
CC
= 15 V, I
O
= -100 mA
V
F
= 0.8 V, V
CC
= 15 V, I
O
=
100 mA
I
F
= 10ma, V
CC
= 30v,
V
O
=打开
I
F
= 0ma, V
CC
= 30v,
V
O
=开路
V
CC
= 15 v, V
O
> 1 v
V
CC
= 15v, V
O
< 1v
I
F
= 5ma, V
O
> 2.5 V
I
F
= 5ma, V
O
< 2.5 V
所有典型值均为 T
a
= 25。
该器件采用低功耗设计,比之前的器件对ESD更敏感。在电路设计和pc板实现中应特别注意,以避免ESD问题。
1:I
O
应用时间≤50µs;单脉冲。
东芝电子元件及存储设备公司