AP64501
Document number: DS41980 Rev. 4 - 2
5 of 26
www.diodes.com
August 2019
© Diodes Incorporated
AP64501
Absolute Maximum Ratings (Note 4) (At T
A
= +25°C, unless otherwise specified.)
Symbol
Parameter
Rating
Unit
VIN
Supply Pin Voltage
-0.3 to +42.0 (DC)
V
-0.3 to +45.0 (400ms)
V
BST
Bootstrap Pin Voltage
V
SW
- 0.3 to V
SW
+ 6.0
V
V
EN
Enable/UVLO Pin Voltage
-0.3 to +42.0
V
V
SS
Soft-Start Pin Voltage
-0.3 to +6.0
V
V
FB
Feedback Pin Voltage
-0.3 to +6.0
V
V
COMP
Compensation Pin Voltage
-0.3 to +6.0
V
V
SW
Switch Pin Voltage
-0.3 to VIN + 0.3 (DC)
V
-2.5 to VIN + 2.0 (20ns)
T
ST
Storage Temperature
-65 to +150
°C
T
J
Junction Temperature
+160
°C
T
L
Lead Temperature
+260
°C
ESD Susceptibility (Note 5)
HBM
Human Body Model
2000
V
CDM
Charged Device Model
500
V
Notes: 4. Stresses greater than the Absolute Maximum Ratings specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Thermal Resistance (Note 6)
Symbol
Parameter
Rating
Unit
θ
JA
Junction to Ambient
SO-8EP
45
°C/W
θ
JC
Junction to Case
SO-8EP
5
°C/W
Note: 6. Test condition for SO-8EP: Device mounted on FR-4 substrate, four-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions (Note 7) (At T
A
= +25°C, unless otherwise specified.)
Symbol
Parameter
Min
Max
Unit
VIN
Supply Voltage
3.8
40
V
VOUT
Output Voltage
0.8
39
V
T
A
Operating Ambient Temperature Range
-40
+85
°C
T
J
Operating Junction Temperature Range
-40
+125
°C
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
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