DDR3 SDRAM技术规格详解：MT41J系列

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"DDR3 SDRAM数据手册包含了MT41J1G4，MT41J512M8，MT41J256M16等不同规格的内存芯片，这些芯片是DDR3 SDRAM类型，适用于1.5V工作电压，并具有多种功能特性，如差分双向数据 strobe、8n位预取架构、内部8个银行等。手册还提到了可编程的CAS读取延迟、写入延迟以及自刷新模式等高级特性。" DDR3 SDRAM（Double Data Rate Third Generation Synchronous Dynamic Random-Access Memory）是一种高速同步动态随机存取存储器，相较于DDR2，它提供了更高的数据传输速率和更低的功耗。MT41J系列是DDR3内存芯片的不同容量型号，包括1Gigabit x4（MT41J1G4）、512Megabit x8（MT41J512M8）和256Megabit x16（MT41J256M16）的配置，分别代表了不同密度的内存模块。这些芯片的关键特性包括： 1. **电源电压**：它们运行在1.5V±0.075V的工作电压范围内，相较于DDR2的1.8V，降低了功耗。 2. **I/O接口**：采用1.5V中心终止的推挽式输入/输出，同时支持差分双向数据 strobe，以提高信号质量并降低干扰。 3. **预取架构**：8n位预取设计使得数据传输效率更高，可以每时钟周期处理更多的数据。 4. **时钟输入**：使用差分时钟输入（CK和CK#），增强了时钟信号的抗干扰能力。 5. **内部银行**：内部包含8个独立的银行，允许并发访问，提高了内存带宽。 6. **时序控制**：具有可编程的CAS读取延迟（CL）、附加延迟（AL）和基于时钟周期的CAS写入延迟（CWL），可以根据系统需求进行微调。 7. **突发长度**：固定突发长度（BL）为8，支持突发切分（BC）功能，可以通过模组寄存器集（MRS）设定4或8的突发长度，以优化性能。 8. **灵活性**：支持在运行中选择BC4或BL8，实现On-the-fly（OTF）调整。 9. **自刷新模式**：提供了节能的自刷新模式，根据温度范围（TC）设定不同的刷新周期。 10. **温度管理**：包括标准工作温度范围内的自刷新温度（SRT）和自动自刷新温度（ASR）机制，以保护内存芯片在不同环境条件下的稳定性。 11. **写入校准**：具备写入校准功能，确保数据正确写入。 12. **多用途寄存器**：用于存储和控制各种内存操作参数。 13. **封装形式**：提供FBGA封装，无铅选项，包括78球（9mmx10.5mm）和96球（9mmx14mm）两种尺寸。 14. **时序**：例如，周期时间为938ps@CL=14，这表示在CL（CAS延迟）为14个时钟周期时的最小操作时间。 DDR3 SDRAM数据手册为设计者提供了详细的技术规格和使用指导，是构建高性能、低功耗系统的宝贵参考资料。通过理解和应用这些特性，工程师能够优化系统性能，满足不同应用场景的需求。

Ball Assignments and Descriptions

Figure 6: 78-Ball FBGA – x4, x8 (Top View)

1234 67895

DDQ

SSQ

REFDQ

ODT

SSQ

DQ2

NF, DQ6

DDQ

CS#

BA0

RESET#

DQ0

DQS

DQS#

NF, DQ4

RAS#

CAS#

WE#

BA2

A13

NF, NF/TDQS#

DM, DM/TDQS

DQ1

NF, DQ7

CK#

A10/AP

A15

A12/BC#

A11

A14

DDQ

SSQ

DDQ

CKE

SSQ

DQ3

NF, DQ5

REFCA

BA1

Notes:

1. Ball descriptions listed in Table 3 (page 18) are listed as “x4, x8” if unique; otherwise,

x4 and x8 are the same.

2. A comma separates the configuration; a slash defines a selectable function.

Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies

to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-

fined in Table 3).

4Gb: x4, x8, x16 DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef8417277b

4Gb_DDR3_SDRAM.pdf - Rev. N 12/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions

Symbol Type Description

A[15:13], A12/BC#,

A11, A10/AP, A[9:0]

Input Address inputs: Provide the row address for ACTIVATE commands, and the column

address and auto precharge bit (A10) for READ/WRITE commands, to select one

location out of the memory array in the respective bank. A10 sampled during a

PRECHARGE command determines whether the PRECHARGE applies to one bank

(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also

provide the op-code during a LOAD MODE command. Address inputs are referenced

to V

REFCA

. A12/BC#: When enabled in the mode register (MR), A12 is sampled during

READ and WRITE commands to determine whether burst chop (on-the-fly) will be

performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69 (page 113).

BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,

WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode

BA[2:0] are referenced to V

REFCA

CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals

are sampled on the crossing of the positive edge of CK and the negative edge of

CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.

CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW)

internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/

disabled is dependent upon the DDR3 SDRAM configuration and operating mode.

Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations

(all banks idle), or active power-down (row active in any bank). CKE is synchronous

for power-down entry and exit and for self refresh entry. CKE is asynchronous for

self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are

disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disa-

bled during SELF REFRESH. CKE is referenced to V

REFCA

CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the

command decoder. All commands are masked when CS# is registered HIGH. CS#

provides for external rank selection on systems with multiple ranks. CS# is considered

part of the command code. CS# is referenced to V

REFCA

DM Input Input data mask: DM is an input mask signal for write data. Input data is masked

when DM is sampled HIGH along with the input data during a write access.

Although the DM ball is input-only, the DM loading is designed to match that of the

DQ and DQS balls. DM is referenced to V

REFDQ

. DM has an optional use as TDQS on

the x8.

ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)

termination resistance internal to the DDR3 SDRAM. When enabled in normal

operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,

and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is

ignored if disabled via the LOAD MODE command. ODT is referenced to V

REFCA

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command

being entered and are referenced to V

REFCA

RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V

. The RESET# input re-

ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V

and

DC LOW ≤ 0.2 × V

DDQ

. RESET# assertion and desertion are asynchronous.

4Gb: x4, x8, x16 DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef8417277b

4Gb_DDR3_SDRAM.pdf - Rev. N 12/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 4: 96-Ball FBGA – x16 Ball Descriptions

Symbol Type Description

A[14:13], A12/BC#,

A11, A10/AP, A[9:0]

Input Address inputs: Provide the row address for ACTIVATE commands, and the column

address and auto precharge bit (A10) for READ/WRITE commands, to select one

location out of the memory array in the respective bank. A10 sampled during a

PRECHARGE command determines whether the PRECHARGE applies to one bank

(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also

provide the op-code during a LOAD MODE command. Address inputs are referenced

to V

REFCA

. A12/BC#: When enabled in the mode register (MR), A12 is sampled during

READ and WRITE commands to determine whether burst chop (on-the-fly) will be

performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69 (page 113).

BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,

WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode

BA[2:0] are referenced to V

REFCA

CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals

are sampled on the crossing of the positive edge of CK and the negative edge of

CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.

CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal

circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-

pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE

LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks

idle),or active power-down (row active in any bank). CKE is synchronous for power-

down entry and exit and for self refresh entry. CKE is asynchronous for self refresh

exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during

POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF

REFRESH. CKE is referenced to V

REFCA

CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the

command decoder. All commands are masked when CS# is registered HIGH. CS# pro-

vides for external rank selection on systems with multiple ranks. CS# is considered

part of the command code. CS# is referenced to V

REFCA

LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte

input data is masked when LDM is sampled HIGH along with the input data during a

write access. Although the LDM ball is input-only, the LDM loading is

designed to match that of the DQ and DQS balls. LDM is referenced to V

REFDQ

ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)

termination resistance internal to the DDR3 SDRAM. When enabled in normal

operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS,

LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS,

and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for

the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is

referenced to V

REFCA

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command

being entered and are referenced to V

REFCA

RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V

. The RESET# input re-

ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V

and

DC LOW ≤ 0.2 × V

DDQ

. RESET# assertion and desertion are asynchronous.

4Gb: x4, x8, x16 DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef8417277b

4Gb_DDR3_SDRAM.pdf - Rev. N 12/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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