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CC2560A NRND; CC2564 NRND
9
CC2560A, CC2560B, CC2564, CC2564B
www.ti.com
SWRS121E –JULY 2012–REVISED JANUARY 2016
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Product Folder Links: CC2560A CC2560B CC2564 CC2564B
SpecificationsCopyright © 2012–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 7.1, Reference Design for Power and
Radio Connections.
(2) Analog pins: BT_RF, XTALP, and XTALM
(3) The reference design supports a temperature range of –20°C to 70°C because of the operating conditions of the crystal.
5 Specifications
Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board
(EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated.
5.1 Absolute Maximum Ratings
(1)
Over operating free-air temperature range (unless otherwise indicated). All parameters are measured as follows:
VDD_IN = 3.6 V and VDD_IO = 1.8 V (unless otherwise indicated).
PARAMETERS MIN MAX UNIT
Supply voltage range
VDD_IN –0.5 4.8 V
(1)
VDDIO_1.8V –0.5 2.145 V
Input voltage to analog pins
(2)
–0.5 2.1 V
Input voltage to all other pins
–0.5
VDD_IO
+ 0.5
V
Bluetooth RF inputs 10 dBm
Operating ambient temperature range, T
A
(3)
–40 85 °C
Storage temperature range, T
stg
–55 125 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.2 ESD Ratings
VALUE UNIT
V
(ESD)
electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±500
V
Charged device model (CDM), per JEDEC specification JESD22- ±YYY V C101
(2)
±250
5.3 Power-On Hours
DEVICE CONDITIONS POWER-ON HOURS
CC256x
Duty cycle = 25% active and 75% sleep
Tambient = 70ºC
15,400 (7 Years)
(1) The device can be reliably operated for 7 years at T
ambient
of 85°C, assuming 25% active mode and 75% sleep mode (15,400
cumulative active power-on hours).
(2) A crystal-based solution is limited by the temperature range required for the crystal to meet 20 ppm.
5.4 Recommended Operating Conditions
RATING CONDITION SYM MIN MAX UNIT
Power supply voltage VDD_IN 2.2 4.8 V
I/O power supply voltage VDD_IO 1.62 1.92 V
High-level input voltage Default V
IH
0.65 x VDD_IO VDD_IO V
Low-level input voltage Default V
IL
0 0.35 x VDD_IO V
I/O input rise and all times,10% to 90% — asynchronous mode t
r
and t
f
1 10 ns
I/O input rise and fall times, 10% to 90% — synchronous mode (PCM) 1 2.5 ns
Voltage dips on VDD_IN (V
BAT
)
duration = 577 μs to 2.31 ms, period = 4.6 ms
400 mV
Maximum ambient operating temperature
(1) (2)
–40 85 °C