量子点在窄带LED转换应用中的探索

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"Exploring the bounds of narrow-band quantum dot downconverted LEDs" 量子点在发光二极管（LED）应用中的商业价值正在不断增长。虽然它们在显示器应用的远程离芯片架构中已被使用多年，但据我们所知，这是首次证明量子点能够承受芯片内架构的需求，因此可以在照明和显示器应用中直接替代磷光体。众所周知，在照明中实现更好的色彩指标以及在显示技术中增加色域，使用具有窄发射线宽和精确可调峰值的下转换器是极其理想的。这篇论文将讨论量子点在芯片上用于照明应用的结果。量子点的核心特性在于其能级结构，这使得它们可以发出非常窄带的光谱，这对于颜色控制至关重要。在照明领域，更精确的色彩温度控制可以提供更舒适的环境光，而在显示技术中，更宽的色域则能提供更为生动真实的图像。传统上，磷光体被用作LED的色彩转换材料，但它们通常具有较宽的发射光谱，这限制了它们在高色彩质量应用中的效率。论文中提到的研究表明，量子点能够在芯片级集成，这意味着它们可以直接与半导体材料结合，而无需像过去那样采用离芯片架构。这种集成不仅简化了制造过程，还可能提高设备的性能和效率。量子点的尺寸效应使得其发射光谱可以根据量子点的大小进行调整，这一特性使其成为理想的颜色转换材料。通过在LED中使用量子点，可以实现更高效的能量转换，因为量子点的发射光谱可以与LED的激发光谱高度匹配，减少能量损失。此外，由于量子点的发射光谱窄，因此可以显著改善色彩纯度和显色指数，这对于高要求的照明和显示应用尤其重要。论文进一步可能会探讨量子点LED的稳定性、寿命以及潜在的环境影响，这些都是商业化过程中需要考虑的关键因素。同时，量子点的毒性问题也是研究者关注的焦点，因为确保材料的安全性是其广泛应用的先决条件。 "Exploring the bounds of narrow-band quantum dot downconverted LEDs" 这篇论文揭示了量子点在提升LED性能方面的巨大潜力，特别是在实现窄带发射和精确色彩控制方面。随着技术的进步和对量子点材料特性的深入理解，量子点在照明和显示行业的应用前景将更加广阔。

Exploring the bounds of narrow-band

quantum dot downconverted LEDs

BENJAMIN D. MANGUM,TIEMO S. LANDES,BRIAN R. THEOBALD, AND JUANITA N. KURTIN*

Pacific Light Technologies, 2828 SW Corbett Ave., Portland, Oregon 97201, USA

*Corresponding author: juanita.kurtin@pacificlighttech.com

Received 17 November 2016; revised 25 January 2017; accepted 25 January 2017; posted 27 January 2017 (Doc. ID 280877);

published 23 February 2017

Quantum dots are finding increasing commercial success in LED applications. While they have been used for

several years in remote off-chip architectures for display applications, it is shown for the first time to our knowl-

edge that quantum dots can withstand the demands of the on-chip architectu re and therefore are capable of being

used as a direct phosphor replacement in both lighting and display applications. It is well known that, to achieve

improved color metrics in lighting as well as increased gamut in display technologies, it is highly desirable to

utilize a downconverter with a narrow emission linewidth as well as a precisely tunable peak. This paper will

discuss the results of on-chip use of quantum dots in a lighting product, and explore the opportunities and

practical limits for improvement of various lighting and display metrics by use of this unique downconverter

technology.

OCIS codes: (160.4236) Nanomaterials; (160.6000) Semiconductor materials; (160.2540) Fluorescent and luminescent materials;

(230.3670) Light-emitting diodes; (230.5590) Quantum-well, -wire and -dot devices; (330.1730) Colorimetry.

https://doi.org/10.1364/PRJ.5.000A13

1. INTRODUCTION

From the early days of quantum dot (QD) research, QDs have

long been targeted for use as downconverters in LEDs due to

their combination of unique emission characteri stics: tunability

of wavelength and narrow emission linewidths [1,2]. While

other state-of-the-art downconverters may offer one of these

traits, simultaneously achieving this combination of capabilities

can only be realized by QDs. Both lighting and display appli-

cations can greatly benefit from narrow emitting downconvert-

ers. For many years the use of QDs has been a goal in lighting,

primarily because QDs present the opportunity to have high

efficiency and precisely tunable narrow bandwidth emission,

especially in a wavelength range that provides significant tech-

nological difficulties for conventional phosphors [3]. While dis-

play technologies have seen the introduction of QD products,

current product offerings are remote-phosphor configurations

where the QD downconverters are not integrated with the LED

package.

Downconverters must generally be capable of being applied

directly onto the LED chip to allow for a cost-effective device

architecture without altering the small form factor achieved by

the state-of-the-art LED solutions. Until now, this has pre-

sented a major problem for the use of QDs for two key reasons:

stability at high temperatures and self-absorption due to a large

overlap between absorption and emission by typical QD

materials. These issues have been solved through a QD design

that directly addresses the issue of stability and self-absorption

without incurring any penalty to QD performance. Importantly,

QDs are produced in a powder form, thereby addressing a more

subtle but definitely not trivial issue of integrating QDs into the

LED production process. Specifically, QD powders are added at

a sufficiently high level to achieve a desired color point in a way

that is compatible with optical grade silicones.

The QDs in this study utilize an architecture that minimizes

self-absorption across a range of visible wavelengths (Fig. 1), is

compatible with the LED packaging process, and is stable in

reliability testing under standard long-term stress conditions

(Fig. 2). In collaboration with an LED manufacturing partner,

Lumileds, QD-based LEDs have been developed and tested in

the same manner as conventional phosphor-converted LEDs.

While Lumileds has presented in this issue device-level results

based on the use of QDs in their packages [4], this paper will

focus on the ultimate capabilities of these materials.

Like all narrow-emission, high-performance QDs, these QDs

contain a small amount of cadmium. The amount of Cd used in

the on-chip solution is significantly less than in a remote imple-

mentation. However, there is still a desire to evaluate cadmium-

free QDs for on-chip use. The most well-developed Cd-free QD

candidate technology currently is InP based [5–8]. To date,

a survey of InP-based QDs shows that the full width at half

maximum (FWHM) of the emission is in the range of 50 nm

for green and 65 nm for red [5–8]. The following sections will

Research Article

Vol. 5, No. 2 / April 2017 / Photonics Research A13

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