"Samsung K7A801800B256Kx36 数据手册"

The SAMSUNG-K7A801800B.pdf is a datasheet for the SAMSUNG-K7A801800B, a 256Kx36 synchronous pipelined burst SRAM. This high-performance memory device features a low voltage operation and a fast clock speed, making it ideal for use in a wide range of applications. The SAMSUNG-K7A801800B.pdf provides detailed information on the specifications and features of the SAMSUNG-K7A801800B, including its operating voltage, clock speed, burst mode operation, and data transfer rates. The datasheet also includes information on the device's pin configuration, timing diagrams, and electrical characteristics, making it easy for designers to integrate the SAMSUNG-K7A801800B into their systems. One of the key features of the SAMSUNG-K7A801800B is its pipelined burst operation, which allows for high-speed data transfers with minimal latency. This makes the device well-suited for applications requiring rapid access to large amounts of data, such as networking equipment, telecommunications systems, and high-performance computing platforms. In addition to its high-speed operation, the SAMSUNG-K7A801800B also offers a low voltage operation, making it a power-efficient choice for battery-powered devices or other applications where power consumption is a concern. The device supports a range of power-saving modes, allowing designers to optimize performance and power consumption based on their specific requirements. Overall, the SAMSUNG-K7A801800B is a versatile and high-performance memory device that offers fast data access, low power consumption, and a range of advanced features. With its combination of speed, efficiency, and flexibility, the SAMSUNG-K7A801800B is an ideal choice for designers looking to add high-performance memory to their systems.