5
TS3USB31E
www.ti.com
SCDS256A –OCTOBER 2009–REVISED SEPTEMBER 2016
Product Folder Links: TS3USB31E
Submit Documentation FeedbackCopyright © 2009–2016, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
TS3USB31
UNITRSE (UQFN)
8 PINS
R
θJA
Junction-to-ambient thermal resistance 127.1 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 70.4 °C/W
R
θJB
Junction-to-board thermal resistance 35 °C/W
ψ
JT
Junction-to-top characterization parameter 2.9 °C/W
ψ
JB
Junction-to-board characterization parameter 34.9 °C/W
(1) V
IN
and I
IN
refer to control inputs. V
I
, V
O
, I
I
, and I
O
refer to data pins.
(2) All typical values are at V
CC
= 3.3 V (unless otherwise noted), T
A
= 25°C.
(3) For I/O ports, the parameter I
OZ
includes the input leakage current.
(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V
CC
or GND.
(5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
(1)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
V
IK
Input Clamp
Voltage
V
CC
= 3 V, I
I
= –18 mA –1.2 V
I
IN
Control inputs V
CC
= 4.3 V or 0 V, V
IN
= 0 to 4.3 V ±1 µA
I
OZ
(3)
V
CC
= 4.3 V, V
O
= 0 to 3.6 V, V
I
= 0, switch OFF ±1 µA
I
OFF
D+ and D– V
CC
= 0 V, V
O
= 0 V to 4.3 V, V
I
= 0, V
IN
= V
CC
or GND ±2 µA
I
CC
V
CC
= 4.3 V, I
I/O
= 0, switch ON or OFF 1 µA
ΔI
CC
(4)
Control inputs V
CC
= 4.3 V, V
IN
= 2.6 V 10 µA
C
in
Control inputs V
CC
= 0 V, V
IN
= V
CC
or GND 1 pF
C
io(OFF)
Off-state input-
output
capacitance
V
CC
= 2.5 V, V
I/O
= 2.5 V or 0, switch OFF 2
pF
V
CC
= 3.3 V, V
I/O
= 3.3 V or 0, switch OFF 2
C
io(ON)
On-state input-
output
capacitance
V
CC
= 2.5 V, V
I/O
= 2.5 V or 0, switch ON 6
pF
V
CC
= 3.3 V, V
I/O
= 3.3 V or 0, switch ON 6
r
on
(5)
On-state
resistance
V
CC
= 2.5 V, V
I
= 0.4 V, I
O
= –8 mA 7.5 9
Ω
V
CC
= 3 V, V
I
= 0.4 V, I
O
= –8 mA 6.5 10
Δr
on
Channel match
V
CC
= 2.5 V, V
I
= 0.4 V, I
O
= –8 mA 0.4
Ω
V
CC
= 3 V, V
I
= 0.4 V, I
O
= –8 mA 0.35
r
on(flat)
On-state
resistance
flatness
V
CC
= 2.5 V, V
I
= 0 V or 1 V, I
O
= –8 mA 0.07
Ω
V
CC
= 3 V, V
I
= 0 V or 1 V, I
O
= –8 mA 2
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
6.6 Dynamic Electrical Characteristics
over operating range, T
A
= –40°C to +85°C, GND = 0 V
PARAMETER TEST CONDITIONS TYP
(1)
UNIT
V
CC
= 2.5 V ± 10%
X
TALK
Crosstalk R
L
= 50 Ω, f = 240 MHz, See Figure 6 –53 dB
O
IRR
OFF isolation R
L
= 50 Ω, f = 240 MHz, See Figure 5 –30 dB
BW Bandwidth (–3 dB) R
L
= 50 Ω, C
L
= 5 pF, See Figure 7 1100 MHz
V
CC
= 3.3 V ± 10%
X
TALK
Crosstalk R
L
= 50 Ω, f = 240 MHz, See Figure 6 –53 dB
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